Advanced developments for CMOS for 0.25 um and below

Informazioni relative al progetto

ADEQUAT+

ID dell’accordo di sovvenzione: 21752

Progetto chiuso

Data di avvio 1 Novembre 1995

Data di completamento 31 Gennaio 1997

Finanziato da

• Specific research and technological development programme in the field of information technologies, 1994-1998

Costo totale

€ 23 194 500,00

Contributo UE

€ 11 700 000,00

Coordinato da

Interuniversitair Mikroelektronica Centrum
Belgium

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati sfruttabili

ADEQUAT+: leading the way in process technology

The ADEQUAT+ project has achieved 0.18 micron front-end (processes in the first few layers) complementary metal oxide semiconductor (CMOS) processes, as well as 0.25 micron for the back-end (those in the final layers). Semiconductor fabrication is a complex multi-stage process and moving to 0.18 micron required addressing challenges at all stages, especially to find process sequences with more latitude. Alternative solutions for dielectrics, junctions and conductors were investigated, and new device architectures and novel schemes to connect them were developed. ADEQUAT+ showed the feasibility of CMOS transistors with 0.18 micron channel lengths. It demonstrated devices operating from supply voltages down to 1.8 V, and low-voltage technologies for 0.25 micron transistors. Layout rules for 0.25 micron back-end processing of 0.4 micron lengths were obtained, as well as 0.5 micron space for contacts and 0.4 micron interconnects, in the first metal layer. A stack of five metal layers using this process was also demonstrated.