Skip to main content
Vai all'homepage della Commissione europea (si apre in una nuova finestra)
italiano italiano
CORDIS - Risultati della ricerca dell’UE
CORDIS
Contenuto archiviato il 2024-04-16

Process Modelling and Device Optimisation for Submicron Technologies

Obiettivo

The objective of STORM was to develop a tool capable of simulating CMOS and bipolar device processes.
The objective of the project is to develop a tool capable of simulating complementary metal oxide semiconductor (CMOS) and bipolar device processes. The end product is a simulation environment, the 'Project Code', incorporating advanced modules for process and device simulation, optimization algorithms, and a user interface. Incorporated within the code will be a set of more accurate models for the simulation of newly developed processes such as rapid thermal annealing (RTA), impurity diffusion from polysilicon and silicide, trench isolation, high energy and multilayer ion implantation, optical lithography, chemical vapour deposition (CVD), and glass reflow.

3 versions of the project code will be produced:
a first (prototype) version integrating the different state of the art simulators;
an intermediate version merging the new or improved models for process simulation, sensitivity analysis according to a significant list of process parameters, and first tentative optimization algorithms;
the final version which includes consolidated models and optimization programmes.

3 main work packages exist. The first develops improved models for process simulation. It is divided in 3 subpackages, dealing with dopant diffusion, thermal oxidation and topography, and ion implantation. The second addresses optimization techniques for device design with the aim of setting up an automatic optimization tool, and the third covers software integration. The project code aims to satisfy the future needs of the integrated circuit (IC) industry. In so far as it will simulate both CMOS and bipolar basic technologies, it will be able to handle the optimization of future bipolar complementary metal oxide semiconductor (BICMOS) processes as well. Advanced models for process simulation have been developed for ion implantation, dopant diffusion in polysilicon, RTA precipitation mechanisms, thermal oxidation, glass reflow and CVD. Optimization tools are under development following 2 alter native approaches: response surface method, and minimization techniques.
The end product is a simulation environment, the "Project Code", incorporating advanced modules for process and device simulation, optimisation algorithms, and a user interface. Incorporated within the code is a set of more accurate models for the simulation of newly developed processes such as rapid thermal annealing, impurity diffusion from polysilicon and silicide, trench isolation, high energy and multilayer ion implantation, optical lithography, chemical vapour deposition, and glass reflow.

STORM was organised around three main work-packages. The first one was developing improved models for process simulation. For management reasons, it was divided in three sub-packages, dealing with dopant diffusion, thermal oxidation and topography, and ion implantation. The second work-package addressed optimisation techniques for device design with the aim of setting up an automatic optimisation tool, the third covered software integration and global validation on industrial applications.

STORM is able to simulate both CMOS and bipolar basic technologies, and to handle the optimisation of future BICMOS processes as well.

Campo scientifico (EuroSciVoc)

CORDIS classifica i progetti con EuroSciVoc, una tassonomia multilingue dei campi scientifici, attraverso un processo semi-automatico basato su tecniche NLP. Cfr.: https://op.europa.eu/it/web/eu-vocabularies/euroscivoc.

È necessario effettuare l’accesso o registrarsi per utilizzare questa funzione

Programma(i)

Programmi di finanziamento pluriennali che definiscono le priorità dell’UE in materia di ricerca e innovazione.

Argomento(i)

Gli inviti a presentare proposte sono suddivisi per argomenti. Un argomento definisce un’area o un tema specifico per il quale i candidati possono presentare proposte. La descrizione di un argomento comprende il suo ambito specifico e l’impatto previsto del progetto finanziato.

Dati non disponibili

Invito a presentare proposte

Procedura per invitare i candidati a presentare proposte di progetti, con l’obiettivo di ricevere finanziamenti dall’UE.

Dati non disponibili

Meccanismo di finanziamento

Meccanismo di finanziamento (o «Tipo di azione») all’interno di un programma con caratteristiche comuni. Specifica: l’ambito di ciò che viene finanziato; il tasso di rimborso; i criteri di valutazione specifici per qualificarsi per il finanziamento; l’uso di forme semplificate di costi come gli importi forfettari.

Dati non disponibili

Coordinatore

Centre National d'Études des Télécommunications (CNET)
Contributo UE
Nessun dato
Indirizzo
98 chemin du Vieux Chêne
38243 Meyland
Francia

Mostra sulla mappa

Costo totale

I costi totali sostenuti dall’organizzazione per partecipare al progetto, compresi i costi diretti e indiretti. Questo importo è un sottoinsieme del bilancio complessivo del progetto.

Nessun dato

Partecipanti (9)

Il mio fascicolo 0 0