Obiettivo
-To measure photolithography overlay with a high precision of 6-8 nm for the 60-80 nm overlay budgets used in 0.25/0.18 micron resolution lithography on 150 to 300 mm wafers.
- High throughput (90 wafers/hour, 5 points), good measurement performance of difficult grainy layers and flat CMP surfaces, and low added contamination (<0.01 particles./cm{2}/pass) are targeted.
- Evaluate fast measurement mode in two directions which calculates average overlay to suppress tool induced shift (TIS) bringing both improved accuracy and good long term repeatability.
The performance of the JMG overlay measurement tool ALARM 2 (evolution of ALARM 1, formerly supplied by Nanomaster) is to be assessed and improved at GRESSI, Grenoble, France. The overall equipment precision necessary to measure overlay figures as required by 0.18/0.25 micron IC technologies and 300 mm wafer handling capability are the main targets of the project
Invito a presentare proposte
Data not availableMeccanismo di finanziamento
ACM - Preparatory, accompanying and support measuresCoordinatore
38054 Grenoble 9
Francia