Obiettivo Numerous applications extending from military (night vision, surveillance, airborne tracking) to civilian (pharmaceutical and food industry spectroscopy, environmental monitoring, machine and automotive vision, biomedical imaging) are based on infrared photodectors and imaging arrays that detect photons in the Mid Infrared (MWIR) 3 – 5 um and Long wavelength Infrared (LWIR) from 8 - 12 um. Although CdHgTe semiconductor compound offered efficient coverage of the infrared spectrum by varying the stoichiometry the exploitation of this material towards the fabrication of imaging sensors was proved very challenging due to the costly complex growth processes as well as due to inherent spatial non-uniformity issues. Dramatic progress has been made recently in the field of epitaxially grown quantum dots that offer significant advantages of controlled growth as well as normal incidence sensitivity and dramatically lower dark current densities. The main disadvantage of this new approach however lies on the high cost and complexity method of molecular beam epitaxy required to grow the quantum dots as well as the incompatibility with monolithic integration to silicon (CMOS) read-out circuitry. The advent of colloidal quantum dots has been established during the last decade, where the quantum dots can be synthesized in solution phase. Following the bottom-up approach, fabrication of thin films can then take place using room-temperature, low-cost, well-established techniques such as spraycasting and spincoating enabling large-scale manufacturing directly integrated onto CMOS platforms. In this proposal we combine the unique physical properties of quantum dots with the most desired chemical and processing properties of solution-processed materials to develop initially an infrared photodetector and subsequently an infrared imaging array system with high sensitivity and cost that is estimated to be two orders of magnitude lower than current approaches. Campo scientifico engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensorsengineering and technologymaterials engineeringcoating and filmsnatural scienceschemical sciencesinorganic chemistrymetalloidsnatural sciencesphysical sciencesastronomyobservational astronomyinfrared astronomynatural sciencesphysical sciencestheoretical physicsparticle physicsphotons Programma(i) FP7-PEOPLE - Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) Argomento(i) FP7-PEOPLE-2009-RG - Marie Curie Action: "Reintegration Grants" Invito a presentare proposte FP7-PEOPLE-2009-RG Vedi altri progetti per questo bando Meccanismo di finanziamento MC-IRG - International Re-integration Grants (IRG) Coordinatore FUNDACIO INSTITUT DE CIENCIES FOTONIQUES Contributo UE € 100 000,00 Indirizzo AVINGUDA CARL FRIEDRICH GAUSS 3 08860 Castelldefels Spagna Mostra sulla mappa Regione Este Cataluña Barcelona Tipo di attività Research Organisations Contatto amministrativo Dolors Mateu (Ms.) Collegamenti Contatta l’organizzazione Opens in new window Sito web Opens in new window Costo totale Nessun dato
