Other documents
- Device integration
- Publishable Summary - P2
- Report on spin transport in graphene on SiC
- Procedure for material characterization based on quantification of weak localization corrections
- Report on measurements on array of 100 Hall bars
- Mapping of properties of a large (50 mm) wafer of graphene - revised
- Scalable fabrication of devices on a 50 mm graphene wafer
- Publishable summary
- Organization of open workshop
- Report on theory of spin transport and spin injection in epitaxial graphene
- Report on the influence of environment on the properties of graphene
- Report on FET/spin-FET devices on epitaxial graphene
- Report on substrates and fabrication processes
- Publishable summary P1
- Comparison of spin-valves of graphene prepared with different techniques including graphene on SiC
- Report on metrological measurements on the QHR standard, device #1
- Report on the theory of the electron-phonon kinetics in graphene on SiC
- Quality comparison: epitaxial graphene vs graphene by CVD
- Report on metrological measurements on the QHR standard, device #2
- Report on characterization of epitaxial graphene
- Final plan for the use and dissemination of foreground - Revised after review meeting
