Objective
For several decades, silicon semiconductor devices have been scaled down to achieve higher device density and performance. As a result, alternative gate oxides with high dielectric constant (high-k), which can prevent power dissipation resulting from direct quantum mechanical tunneling across the dielectric layer, will replace silicon dioxide which has been used as a gate dielectric in metal-oxide-semiconductor field effect transistors. Deposited hafnium oxide-based insulators are currently the most promising high-k materials for MOS device applications. However, it has been consistently observed that high-k based MOSFETs have problems such as reduced mobility of electronic carriers in the transistor channel, difficulty in setting the threshold voltage (Vth) for CMOS devices, Vth instability, and other device reliability problems. Further improvements require a fundamental understanding of these phenomena.
The second aim of this work is the study of Materials for High-Mobility-Channel MOS. Due to their superior properties such as high electron and hole mobility, Ge and III-V materials have been drawing much attention as a high-mobility-channel layer in the future MOS technology. However, there are some major issues that need to be solved to advance the development of high-mobility-channel MOS such as growth of good quality high k dielectric layer with low interface states
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- natural sciences chemical sciences inorganic chemistry transition metals
- natural sciences physical sciences electromagnetism and electronics semiconductivity
- natural sciences chemical sciences inorganic chemistry metalloids
- engineering and technology nanotechnology nanoelectronics
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Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Topic(s)
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Call for proposal
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
FP7-PEOPLE-2010-IOF
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Funding Scheme
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Coordinator
08193 Cerdanyola Del Valles
Spain
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.