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Contenuto archiviato il 2024-06-18

DEVELOPMENT OF ADVANCED GAN TECHNOLOGIES

Obiettivo

According to the High-Level Experts Group (HLG) micro and nanoelectronics are essential for all goods and services which need intelligent control in all innovative sectors and are therefore identified as Key Enabling Technologies (KET). Gallium Nitride is an advanced semiconductor material at the heart of three strategic issues, advanced materials, photonics and micro/nanoelectronics. The deployment of these technologies is key for Europe to strengthen its manufacturing capacities while addressing societal challenges on energy and transportation.
The main goal of the AGATE project is to implement an industrial European source of engineered substrates and epitaxial structures for GaN electronic devices, and to validate the substrate performances on high performance GaN devices.

Campo scientifico

CORDIS classifica i progetti con EuroSciVoc, una tassonomia multilingue dei campi scientifici, attraverso un processo semi-automatico basato su tecniche NLP.

Invito a presentare proposte

ENIAC-2012-2
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Coordinatore

SOITEC SA
Contributo UE
€ 5 602 480,00
Indirizzo
PARC TEC NO DES FONTAINES CHEMIN DE FRANQUES
38190 Bernin
Francia

Mostra sulla mappa

Regione
Auvergne-Rhône-Alpes Rhône-Alpes Isère
Tipo di attività
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contatto amministrativo
Collegamenti
Costo totale
Nessun dato

Partecipanti (9)