Objective In the semiconductor industry, the scaling of MOSFETS ensures the continued reduction in cost and increase in speed. The gate dielectric plays a critical role in this scaling, and extensive research has been carried out on the subject of how to increase the lifetime and integrity of these layers as they become thinner and are subjected to ever increasing current densities and electric fields. The need for a `high-k layer which can be fabricated thicker (while giving equal performance) to replace SiO2 as the dielectric layer in scaled MOSFET devices to stem the leakage current problem is evident. In this project, we intend to refine test methodologies developed by IMEC on relatively well understood high-k candidates like HfO2 and apply these methodologies to more novel materials eg La2O3.The test methodology will focus on controlling the flatband and threshold voltages, Vt shifts, channel mobility, bias temperature instability, charge formation, trapping and amp; de-trapping, and interfacial kinetics for HfO 2 films. Electrical measurements will be made on both large and small area capacitors, and on MOSFETs, and special attention will be paid to understanding the different properties of large and small area devices. Subsequently the study will be extended to new materials and these properties will be evaluated in newer high-k candidates, in an attempt to understand the physical mechanisms at work.Another aspect of the project will be the correlation of the electrical data to physical analysis. This will be achieved by the use of materials analysis techniques (SIMS, XPS etc.) to determine chemical environments, and the linking of this data to electrical performance. The goal of the project is to develop a methodology for evaluating the suitability of high-k materials for incorporation into CMOS, and ultimately to identify such a material. Fields of science natural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesphysical scienceselectromagnetism and electronicsmicroelectronicsnatural sciencesphysical sciencesopticsspectroscopy Keywords CMOS MOSFET high high-k dielectric k dielectric Programme(s) FP6-MOBILITY - Human resources and Mobility in the specific programme for research, technological development and demonstration "Structuring the European Research Area" under the Sixth Framework Programme 2002-2006 Topic(s) MOBILITY-2.1 - Marie Curie Intra-European Fellowships (EIF) Call for proposal FP6-2005-MOBILITY-5 See other projects for this call Funding Scheme EIF - Marie Curie actions-Intra-European Fellowships Coordinator INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW EU contribution No data Address Kapeldreef 75 LEUVEN Belgium See on map Links Website Opens in new window Total cost No data
