Flexible nanowire devices for energy harvesting

Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

Autori: O. Saket, C. Himwas, A. Cattoni, F. Oehler, F. Bayle, S. Collin, L. Travers, A. Babichev, F. H. Julien, J. C. Harmand, M. Tchernycheva
Pubblicato in: Applied Physics Letters, Numero 117/12, 2020, Pagina/e 123104, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0022157

The elevated colour rendering of white-LEDs by microwave-synthesized red-emitting (Li, Mg) 3 RbGe 8 O 18 :Mn 4+ nanophosphors

Autori: Malini Abraham, Arup K. Kunti, Thejas K.K., Nuño Amador-Mendez, Noëlle Gogneau, Nishanth K.G., Maria Tchernycheva, Subrata Das
Pubblicato in: Dalton Transactions, Numero 50/8, 2021, Pagina/e 3044-3059, ISSN 1477-9226
Editore: Royal Society of Chemistry
DOI: 10.1039/d0dt04309e

Single GaN Nanowires for Extremely High Current Commutation

Autori: Konstantin Shugurov, Alexey Mozharov, Georgiy Sapunov, Vladimir Fedorov, Maria Tchernycheva, Ivan Mukhin
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, Numero 15/4, 2021, Pagina/e 2000590, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202000590

Crystal polarity discrimination in GaN nanowires on graphene

Autori: Alexander Pavlov, Alexey Mozharov, Yury Berdnikov, Camille Barbier, Jean-Christophe Harmand, Maria Tchernycheva, Roman Polozkov, Ivan Mukhin
Pubblicato in: Journal of Materials Chemistry C, 2021, ISSN 2050-7534
Editore: Royal Society of Chemistry
DOI: 10.1039/d1tc02710g

Autori: H Zhang, V Piazza, V Neplokh, N Guan, F Bayle, S Collin, L Largeau, A Babichev, F H Julien, M Tchernycheva
Pubblicato in: Nanotechnology, Numero 32/10, 2021, Pagina/e 105202, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/abc70e

Selective Area Growth of GaN Nanowires on Graphene Nanodots

Autori: Martina Morassi, Nan Guan, Vladimir G. Dubrovskii, Yury Berdnikov, Camille Barbier, Lorenzo Mancini, Ludovic Largeau, Andrey V. Babichev, Vishnuvarthan Kumaresan, Francois H. Julien, Laurent Travers, Noëlle Gogneau, Jean-Christophe Harmand, Maria Tchernycheva
Pubblicato in: Crystal Growth & Design, Numero 20/2, 2019, Pagina/e 552-559, ISSN 1528-7483
Editore: American Chemical Society
DOI: 10.1021/acs.cgd.9b00556

Dual‐Color Emission from Monolithic m ‐Plane Core–Shell InGaN/GaN Quantum Wells

Autori: Akanksha Kapoor, Vincent Grenier, Eric Robin, Catherine Bougerol, Gwénolé Jacopin, Bruno Gayral, Maria Tchernycheva, Joël Eymery, Christophe Durand
Pubblicato in: Advanced Photonics Research, 2021, Pagina/e 2000148, ISSN 2699-9293
Editore: Wiley
DOI: 10.1002/adpr.202000148

In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene

Autori: Camille Barbier, Tao Zhou, Gilles Renaud, Olivier Geaymond, Patrick Le Fèvre, Frank Glas, Ali Madouri, Antonella Cavanna, Laurent Travers, Martina Morassi, Noelle Gogneau, Maria Tchernycheva, Jean-Christophe Harmand, Ludovic Largeau
Pubblicato in: Crystal Growth & Design, Numero 20/6, 2020, Pagina/e 4013-4019, ISSN 1528-7483
Editore: American Chemical Society
DOI: 10.1021/acs.cgd.0c00306

Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications

Autori: Omar Saket, Chalermchai Himwas, Valerio Piazza, Fabien Bayle, Andrea Cattoni, Fabrice Oehler, Gilles Patriarche, Laurent Travers, Stephane Collin, François H Julien, Jean-Christophe Harmand, Maria Tchernycheva
Pubblicato in: Nanotechnology, Numero 31/14, 2020, Pagina/e 145708, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab62c9

Nitride Nanowires: From Rigid to Flexible Piezo-generators

Autori: L. Lu, N. Jamond, P. Chrétien, F. Houzé, L. Travers, J. C. Harmand, F. Glas, F. H. Julien, E. Lefeuvre, N. Gogneau, M. Tchernycheva
Pubblicato in: Journal of Physics: Conference Series, Numero 773, 2016, Pagina/e 012010, ISSN 1742-6588
Editore: Institute of Physics
DOI: 10.1088/1742-6596/773/1/012010

Flexible inorganic light emitting diodes based on semiconductor nanowires

Autori: Nan Guan, Xing Dai, Andrey V. Babichev, François H. Julien, Maria Tchernycheva
Pubblicato in: Chemical Science, Numero 8/12, 2017, Pagina/e 7904-7911, ISSN 2041-6520
Editore: Royal Society of Chemistry
DOI: 10.1039/C7SC02573D

Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes

Autori: H Zhang, N Guan, V Piazza, A Kapoor, C Bougerol, F H Julien, A V Babichev, N Cavassilas, M Bescond, F Michelini, M Foldyna, E Gautier, C Durand, J Eymery, M Tchernycheva
Pubblicato in: Journal of Physics D: Applied Physics, Numero 50/48, 2017, Pagina/e 484001, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aa935d

In situ passivation of GaAsP nanowires

Autori: C Himwas, S Collin, P Rale, N Chauvin, G Patriarche, F Oehler, F H Julien, L Travers, J-C Harmand, M Tchernycheva
Pubblicato in: Nanotechnology, Numero 28/49, 2017, Pagina/e 495707, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aa9533

From single III-nitride nanowires to piezoelectric generators: New route for powering nomad electronics

Autori: N Gogneau, N Jamond, P Chrétien, F Houzé, E Lefeuvre, M Tchernycheva
Pubblicato in: Semiconductor Science and Technology, Numero 31/10, 2016, Pagina/e 103002, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/0268-1242/31/10/103002

Piezo-generator integrating a vertical array of GaN nanowires

Autori: N Jamond, P Chrétien, F Houzé, L Lu, L Largeau, O Maugain, L Travers, J C Harmand, F Glas, E Lefeuvre, M Tchernycheva, N Gogneau
Pubblicato in: Nanotechnology, Numero 27/32, 2016, Pagina/e 325403, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/0957-4484/27/32/325403

Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires

Autori: Hezhi Zhang, Xing Dai, Nan Guan, Agnes Messanvi, Vladimir Neplokh, Valerio Piazza, Martin Vallo, Catherine Bougerol, François H. Julien, Andrey Babichev, Nicolas Cavassilas, Marc Bescond, Fabienne Michelini, Martin Foldyna, Eric Gautier, Christophe Durand, Joël Eymery, Maria Tchernycheva
Pubblicato in: ACS Applied Materials & Interfaces, Numero 8/39, 2016, Pagina/e 26198-26206, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.6b06414

Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Autori: Martina Morassi, Ludovic Largeau, Fabrice Oehler, Hyun-Gyu Song, Laurent Travers, François H. Julien, Jean-Christophe Harmand, Yong-Hoon Cho, Frank Glas, Maria Tchernycheva, Noëlle Gogneau
Pubblicato in: Crystal Growth & Design, Numero 18/4, 2018, Pagina/e 2545-2554, ISSN 1528-7483
Editore: American Chemical Society
DOI: 10.1021/acs.cgd.8b00150

InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection

Autori: Hezhi Zhang, Agnès Messanvi, Christophe Durand, Joël Eymery, Pierre Lavenus, Andrey Babichev, François H. Julien, Maria Tchernycheva
Pubblicato in: physica status solidi (a), Numero 213/4, 2016, Pagina/e 936-940, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201532573

Evaluation of Effective Elastic Properties of Nitride NWs/Polymer Composite Materials Using Laser-Generated Surface Acoustic Waves

Autori: Evgeny Glushkov, Natalia Glushkova, Bernard Bonello, Lu Lu, Eric Charron, Noëlle Gogneau, François Julien, Maria Tchernycheva, Olga Boyko
Pubblicato in: Applied Sciences, Numero 8/11, 2018, Pagina/e 2319, ISSN 2076-3417
Editore: MDPI
DOI: 10.3390/app8112319

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

Autori: Nikoletta Jegenyes, Martina Morassi, Pascal Chrétien, Laurent Travers, Lu Lu, Francois Julien, Maria Tchernycheva, Frédéric Houzé, Noelle Gogneau
Pubblicato in: Nanomaterials, Numero 8/6, 2018, Pagina/e 367, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano8060367

Autori: C Himwas, S Collin, H-L Chen, G Patriarche, F Oehler, L Travers, O Saket, F H Julien, J-C Harmand, M Tchernycheva
Pubblicato in: Nanotechnology, Numero 30/30, 2019, Pagina/e 304001, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab1760

GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

Autori: Quang Chieu Bui, Ludovic Largeau, Martina Morassi, Nikoletta Jegenyes, Olivia Mauguin, Laurent Travers, Xavier Lafosse, Christophe Dupuis, Jean-Christophe Harmand, Maria Tchernycheva, Noelle Gogneau
Pubblicato in: Applied Sciences, Numero 9/17, 2019, Pagina/e 3528, ISSN 2076-3417
Editore: MDPI
DOI: 10.3390/app9173528

Image-based autofocusing system for nonlinear optical microscopy with broad spectral tuning

Autori: Grégoire Saerens, Lukas Lang, Claude Renaut, Flavia Timpu, Viola Vogler-Neuling, Christophe Durand, Maria Tchernycheva, Igor Shtrom, Alexey Bouravleuv, Rachel Grange, Maria Timofeeva
Pubblicato in: Optics Express, Numero 27/14, 2019, Pagina/e 19915, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.27.019915

Colour optimization of phosphor-converted flexible nitride nanowire white light emitting diodes

Autori: Nan Guan, Nuño Amador-Mendez, Junkang Wang, Subrata Das, Akanksha Kapoor, François H Julien, Noëlle Gogneau, Martin Foldyna, Sudipta Som, Joël Eymery, Christophe Durand, Maria Tchernycheva
Pubblicato in: Journal of Physics: Photonics, Numero 1/3, 2019, Pagina/e 035003, ISSN 2515-7647
Editore: IOP
DOI: 10.1088/2515-7647/ab2c84

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Autori: L Mancini, M Morassi, C Sinito, O Brandt, L Geelhaar, Hyun-Gyu Song, Yong-Hoon Cho, N Guan, A Cavanna, J Njeim, A Madouri, C Barbier, L Largeau, A Babichev, F H Julien, L Travers, F Oehler, N Gogneau, J-C Harmand, M Tchernycheva
Pubblicato in: Nanotechnology, Numero 30/21, 2019, Pagina/e 214005, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab0570

Probing elastic properties of nanowire-based structures

Autori: L. Lu, E. Charron, E. Glushkov, N. Glushkova, B. Bonello, F. H. Julien, N. Gogneau, M. Tchernycheva, O. Boyko
Pubblicato in: Applied Physics Letters, Numero 113/16, 2018, Pagina/e 161903, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5045665

Green Electroluminescence from Radial m -Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

Autori: Akanksha Kapoor, Nan Guan, Martin Vallo, Agnes Messanvi, Lorenzo Mancini, Eric Gautier, Catherine Bougerol, Bruno Gayral, Francois H. Julien, François Vurpillot, Lorenzo Rigutti, Maria Tchernycheva, Joël Eymery, Christophe Durand
Pubblicato in: ACS Photonics, Numero 5/11, 2018, Pagina/e 4330-4337, ISSN 2330-4022
Editore: American Chemical Society
DOI: 10.1021/acsphotonics.8b00520

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

Autori: Xing Dai, Agnes Messanvi, Hezhi Zhang, Christophe Durand, Joël Eymery, Catherine Bougerol, François H. Julien, Maria Tchernycheva
Pubblicato in: Nano Letters, Numero 15/10, 2015, Pagina/e 6958-6964, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.5b02900

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

Autori: Nan Guan, Xing Dai, Agnès Messanvi, Hezhi Zhang, Jianchang Yan, Eric Gautier, Catherine Bougerol, François H. Julien, Christophe Durand, Joël Eymery, Maria Tchernycheva
Pubblicato in: ACS Photonics, Numero 3/4, 2016, Pagina/e 597-603, ISSN 2330-4022
Editore: American Chemical Society
DOI: 10.1021/acsphotonics.5b00696

Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

Autori: M. Tchernycheva, V. Neplokh, H. Zhang, P. Lavenus, L. Rigutti, F. Bayle, F. H. Julien, A. Babichev, G. Jacopin, L. Largeau, R. Ciechonski, G. Vescovi, O. Kryliouk
Pubblicato in: Nanoscale, Numero 7/27, 2015, Pagina/e 11692-11701, ISSN 2040-3364
Editore: Royal Society of Chemistry
DOI: 10.1039/C5NR00623F

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

Autori: Vladimir Neplokh, Agnes Messanvi, Hezhi Zhang, Francois H. Julien, Andrey Babichev, Joel Eymery, Christophe Durand, Maria Tchernycheva
Pubblicato in: Nanoscale Research Letters, Numero 10/1, 2015, ISSN 1931-7573
Editore: Springer Verlag
DOI: 10.1186/s11671-015-1143-5

ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells

Autori: Damien Coutancier, Shan-Ting Zhang, Simone Bernardini, Olivier Fournier, Tiphaine Mathieu-Pennober, Frédérique Donsanti, Maria Tchernycheva, Martin Foldyna, Nathanaelle Schneider
Pubblicato in: ACS Applied Materials & Interfaces, Numero 12/18, 2020, Pagina/e 21036-21044, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.9b22973

Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy

Autori: Omar Saket, Junkang Wang, Nuño Amador-Mendez, Martina Morassi, Arup Kunti, Fabien Bayle, Stéphane Collin, Arnaud Jollivet, Andrey Babichev, Tanbir Sodhi, Jean-Christophe Harmand, François H Julien, Noelle Gogneau, Maria Tchernycheva
Pubblicato in: Nanotechnology, Numero 32/8, 2020, Pagina/e 085705, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/abc91a

Improvement of carrier collection in Si/a-Si:H nanowire solar cells by using hybrid ITO/silver nanowires contacts

Autori: Tiphaine Mathieu-Pennober, Martin Foldyna, Shan-Ting Zhang, François H Julien, Nathanaelle Schneider, Maria Tchernycheva
Pubblicato in: Nanotechnology, Numero 31/43, 2020, Pagina/e 435408, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aba4ce

Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact

Autori: Vladimir Neplokh, Fedor M. Kochetkov, Konstantin V. Deriabin, Vladimir V. Fedorov, Alexey D. Bolshakov, Igor E. Eliseev, Vladimir Yu. Mikhailovskii, Daniil A. Ilatovskii, Dmitry V. Krasnikov, Maria Tchernycheva, George E. Cirlin, Albert G. Nasibulin, Ivan S. Mukhin, Regina M. Islamova
Pubblicato in: Journal of Materials Chemistry C, Numero 8/11, 2020, Pagina/e 3764-3772, ISSN 2050-7534
Editore: Royal Society of Chemistry
DOI: 10.1039/c9tc06239d

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

Autori: Nan Guan, Nuño Amador-Mendez, Arup Kunti, Andrey Babichev, Subrata Das, Akanksha Kapoor, Noëlle Gogneau, Joël Eymery, François Henri Julien, Christophe Durand, Maria Tchernycheva
Pubblicato in: Nanomaterials, Numero 10/11, 2020, Pagina/e 2271, ISSN 2079-4991
Editore: MDPI Nanomaterials
DOI: 10.3390/nano10112271

Nitride-nanowire-based flexible LEDs

Autori: Nan Guan, Xing Dai, Joël Eymery, Christophe Durand, Maria Tchernycheva
Pubblicato in: SPIE Newsroom, 2017, ISSN 1818-2259
Editore: SPIE
DOI: 10.1117/2.1201704.006895

Characterisation of Semiconductor Nanowires by Electron Beam Induced Microscopy and Cathodoluminescence

Autori: Maria Tchernycheva, Gwénolé Jacopin, Valerio Piazza
Pubblicato in: Fundamental Properties of Semiconductor Nanowires, 2021, Pagina/e 251-288, ISBN 978-981-15-9049-8
Editore: Springer Singapore
DOI: 10.1007/978-981-15-9050-4_5

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