REsistive-Switch CompUting bEyond CMOS

Project Information

RESCUE

Grant agreement ID: 648635

DOI

10.3030/648635

Project closed

EC signature date 30 July 2015

Start date 1 August 2015

End date 31 July 2020

Funded under

• EXCELLENT SCIENCE - European Research Council (ERC)

Total cost

€ 1 998 113,12

EU contribution

€ 1 998 113,12

Coordinated by

POLITECNICO DI MILANO
Italy

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Peer reviewed articles (34)

Bipolar switching in chalcogenide phase change memory

Author(s): N. Ciocchini, M. Laudato, M. Boniardi, E. Varesi, P. Fantini, A. L. Lacaita, D. Ielmini
Published in: Scientific Reports, Issue 6/1, 2016, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/srep29162

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Author(s): Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 65/1, 2018, Page(s) 115-121, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2777986

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

Author(s): Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 65/1, 2018, Page(s) 122-128, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2776085

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Author(s): D. Ielmini, V. Milo
Published in: Journal of Computational Electronics, Issue 16/4, 2017, Page(s) 1121-1143, ISSN 1569-8025
Publisher: Kluwer Academic Publishers
DOI: 10.1007/s10825-017-1101-9

Stochastic learning in neuromorphic hardware via spike timing dependent plasticity with RRAM synapses

Author(s): Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Published in: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2017, Page(s) 1-1, ISSN 2156-3357
Publisher: IEEE Circuits and Systems Society
DOI: 10.1109/JETCAS.2017.2773124

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

Author(s): Daniele Ielmini
Published in: Microelectronic Engineering, Issue 190, 2018, Page(s) 44-53, ISSN 0167-9317
Publisher: Elsevier BV
DOI: 10.1016/j.mee.2018.01.009

In-memory computing with resistive switching devices

Author(s): Daniele Ielmini, H.-S. Philip Wong
Published in: Nature Electronics, Issue 1/6, 2018, Page(s) 333-343, ISSN 2520-1131
Publisher: Springer Nature
DOI: 10.1038/s41928-018-0092-2

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

Author(s): Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini
Published in: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2018, Page(s) 1-10, ISSN 1063-8210
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TVLSI.2018.2818978

Logic Computing with Stateful Neural Networks of Resistive Switches

Author(s): Zhong Sun, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini
Published in: Advanced Materials, Issue 30/38, 2018, Page(s) 1802554, ISSN 0935-9648
Publisher: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201802554

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Author(s): Adnan Mehonic, Alexander L. Shluger, David Gao, Ilia Valov, Enrique Miranda, Daniele Ielmini, Alessandro Bricalli, Elia Ambrosi, Can Li, J. Joshua Yang, Qiangfei Xia, Anthony J. Kenyon
Published in: Advanced Materials, 2018, Page(s) 1801187, ISSN 0935-9648
Publisher: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201801187

Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses

Author(s): Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Published in: Science Advances, Issue 4/9, 2018, Page(s) eaat4752, ISSN 2375-2548
Publisher: American Association for the Advancement of Science
DOI: 10.1126/sciadv.aat4752

Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory

Author(s): Roberto Carboni, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Published in: IEEE Electron Device Letters, Issue 39/7, 2018, Page(s) 951-954, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2833543

Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime

Author(s): Roberto Carboni, Stefano Ambrogio, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 65/6, 2018, Page(s) 2470-2478, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2822343

Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch

Author(s): Ming Wang, Wei Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, Yaqing Liu, Pingqiang Cai, Hong Wang, Daniele Ielmini, Xiaodong Chen
Published in: Advanced Materials, Issue 30/33, 2018, Page(s) 1802516, ISSN 0935-9648
Publisher: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201802516

Analytical Modeling of Organic-Inorganic CH 3 NH 3 PbI 3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition

Author(s): Yanyun Ren, Valerio Milo, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, Xiaoning Zhao, Yichun Liu
Published in: Advanced Theory and Simulations, Issue 1/4, 2018, Page(s) 1700035, ISSN 2513-0390
Publisher: Wiley VCH
DOI: 10.1002/adts.201700035

Computing of Temporal Information in Spiking Neural Networks with ReRAM Synapses

Author(s): Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro Spinelli, Daniele Ielmini
Published in: Faraday Discussions, 2018, ISSN 1359-6640
Publisher: Royal Society of Chemistry
DOI: 10.1039/C8FD00097B

Physical unbiased generation of random numbers with coupled resistive switching devices

Author(s): S. Balatti, S. Ambrogio, R. Carboni, V. Milo, Z.-Q. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Published in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2537792

Post-cycling degradation in metal-oxide bipolar resistive switching memory (RRAM)

Author(s): Z. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini
Published in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2604370

Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM

Author(s): S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Published in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2526647

Analytical modeling of current overshoot in oxide-based resistive switching memory (RRAM)

Author(s): S. Ambrogio V. Milo, Z. Wang, S. Balatti, and D. Ielmini
Published in: IEEE Electron Device Lett., 2016, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2600574

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

Author(s): Agostino ePirovano; Mario eLaudato; Paolo eFantini; Nicola eCiocchini; Daniele eIelmini; Valerio eMilo; Stefano eAmbrogio
Published in: Frontiers in Neuroscience, Vol 10 (2016), Issue 1, 2016, ISSN 1662-453X
Publisher: Frontiers
DOI: 10.3389/fnins.2016.00056

Resistive Switching Memories based on Metal Oxides: Mechanisms, Reliability and Scaling

Author(s): Daniele Ielmini
Published in: Semiconductor Science and Technology, 2016, ISSN 0268-1242
Publisher: Institute of Physics Publishing
DOI: 10.1088/0268-1242/31/6/063002

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Author(s): Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini
Published in: Faraday Discussions, Issue 213, 2019, Page(s) 87-98, ISSN 1359-6640
Publisher: Royal Society of Chemistry
DOI: 10.1039/c8fd00106e

Solving matrix equations in one step with cross-point resistive arrays

Author(s): Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini
Published in: Proceedings of the National Academy of Sciences, Issue 116/10, 2019, Page(s) 4123-4128, ISSN 0027-8424
Publisher: National Academy of Sciences
DOI: 10.1073/pnas.1815682116

Multilevel HfO 2 -based RRAM devices for low-power neuromorphic networks

Author(s): V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, Ch. Wenger, D. Ielmini
Published in: APL Materials, Issue 7/8, 2019, Page(s) 081120, ISSN 2166-532X
Publisher: AIP
DOI: 10.1063/1.5108650

Emerging neuromorphic devices

Author(s): Daniele Ielmini, Stefano Ambrogio
Published in: Nanotechnology, Issue 31/9, 2020, Page(s) 092001, ISSN 0957-4484
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab554b

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

Author(s): Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 66/9, 2019, Page(s) 3802-3808, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2928888

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling

Author(s): Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 66/9, 2019, Page(s) 3795-3801, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2928890

Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks

Author(s): Irene Munoz-Martin, Stefano Bianchi, Giacomo Pedretti, Octavian Melnic, Stefano Ambrogio, Daniele Ielmini
Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Issue 5/1, 2019, Page(s) 58-66, ISSN 2329-9231
Publisher: IEEE
DOI: 10.1109/JXCDC.2019.2911135

Memristive and CMOS Devices for Neuromorphic Computing

Author(s): Valerio Milo, Gerardo Malavena, Christian Monzio Compagnoni, Daniele Ielmini
Published in: Materials, Issue 13/1, 2020, Page(s) 166, ISSN 1996-1944
Publisher: MDPI Open Access Publishing
DOI: 10.3390/ma13010166

Stochastic Memory Devices for Security and Computing

Author(s): Roberto Carboni, Daniele Ielmini
Published in: Advanced Electronic Materials, Issue 5/9, 2018, Page(s) 1900198, ISSN 2199-160X
Publisher: Wiley VCH
DOI: 10.1002/aelm.201900198

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Author(s): Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini
Published in: Nature Communications, Issue 10/1, 2019, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-018-07979-0

A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory

Author(s): Roberto Carboni, Elena Vernocchi, Manzar Siddik, Jon Harms, Andy Lyle, Gurtej Sandhu, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 66/10, 2019, Page(s) 4176-4182, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2933315

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

Author(s): G. Pedretti, V. Milo, S. Ambrogio, R. Carboni, S. Bianchi, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini
Published in: Scientific Reports, Issue 7/1, 2017, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-017-05480-0

Book chapters (5)

Electrical Transport in crystalline and amorphous chalcogenide

Author(s): Daniele Ielmini
Published in: Phase Change Memory: Device Physics, Reliability and Applications, 2018
Publisher: Springer International Publishing AG

Neuromorphic computing with resistive switching memory devices

Author(s): Daniele Ielmini, Stefano Ambrogio
Published in: Advances in Non-Volatile Memory and Storage Technology, 2019, Page(s) 603-631, ISBN 9780-081025840
Publisher: Elsevier
DOI: 10.1016/B978-0-08-102584-0.00017-6

Brain-Inspired Memristive Neural Networks for Unsupervised Learning

Author(s): Daniele Ielmini, Valerio Milo
Published in: Handbook of Memristor Networks, 2019, Page(s) 495-525, ISBN 978-3-319-76374-3
Publisher: Springer International Publishing
DOI: 10.1007/978-3-319-76375-0_17

Electrical Transport in Crystalline and Amorphous Chalcogenide

Author(s): Daniele Ielmini
Published in: Phase Change Memory, 2018, Page(s) 11-39, ISBN 978-3-319-69052-0
Publisher: Springer International Publishing
DOI: 10.1007/978-3-319-69053-7_2

Applications of Resistive Switching Memory as Hardware Security Primitive

Author(s): Roberto Carboni, Daniele Ielmini
Published in: Applications of Emerging Memory Technology - Beyond Storage, Issue 63, 2020, Page(s) 93-131, ISBN 978-981-13-8378-6
Publisher: Springer Singapore
DOI: 10.1007/978-981-13-8379-3_4