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REsistive-Switch CompUting bEyond CMOS

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Publications

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Author(s): Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 65/1, 2018, Page(s) 115-121, ISSN 0018-9383
DOI: 10.1109/TED.2017.2777986

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

Author(s): Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 65/1, 2018, Page(s) 122-128, ISSN 0018-9383
DOI: 10.1109/TED.2017.2776085

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Author(s): D. Ielmini, V. Milo
Published in: Journal of Computational Electronics, Issue 16/4, 2017, Page(s) 1121-1143, ISSN 1569-8025
DOI: 10.1007/s10825-017-1101-9

Stochastic learning in neuromorphic hardware via spike timing dependent plasticity with RRAM synapses

Author(s): Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Published in: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2017, Page(s) 1-1, ISSN 2156-3357
DOI: 10.1109/JETCAS.2017.2773124

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

Author(s): Daniele Ielmini
Published in: Microelectronic Engineering, Issue 190, 2018, Page(s) 44-53, ISSN 0167-9317
DOI: 10.1016/j.mee.2018.01.009

In-memory computing with resistive switching devices

Author(s): Daniele Ielmini, H.-S. Philip Wong
Published in: Nature Electronics, Issue 1/6, 2018, Page(s) 333-343, ISSN 2520-1131
DOI: 10.1038/s41928-018-0092-2

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

Author(s): Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini
Published in: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2018, Page(s) 1-10, ISSN 1063-8210
DOI: 10.1109/TVLSI.2018.2818978

Logic Computing with Stateful Neural Networks of Resistive Switches

Author(s): Zhong Sun, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini
Published in: Advanced Materials, Issue 30/38, 2018, Page(s) 1802554, ISSN 0935-9648
DOI: 10.1002/adma.201802554

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Author(s): Adnan Mehonic, Alexander L. Shluger, David Gao, Ilia Valov, Enrique Miranda, Daniele Ielmini, Alessandro Bricalli, Elia Ambrosi, Can Li, J. Joshua Yang, Qiangfei Xia, Anthony J. Kenyon
Published in: Advanced Materials, 2018, Page(s) 1801187, ISSN 0935-9648
DOI: 10.1002/adma.201801187

Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses

Author(s): Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Published in: Science Advances, Issue 4/9, 2018, Page(s) eaat4752, ISSN 2375-2548
DOI: 10.1126/sciadv.aat4752

Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory

Author(s): Roberto Carboni, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Published in: IEEE Electron Device Letters, Issue 39/7, 2018, Page(s) 951-954, ISSN 0741-3106
DOI: 10.1109/LED.2018.2833543

Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime

Author(s): Roberto Carboni, Stefano Ambrogio, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 65/6, 2018, Page(s) 2470-2478, ISSN 0018-9383
DOI: 10.1109/TED.2018.2822343

Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch

Author(s): Ming Wang, Wei Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, Yaqing Liu, Pingqiang Cai, Hong Wang, Daniele Ielmini, Xiaodong Chen
Published in: Advanced Materials, Issue 30/33, 2018, Page(s) 1802516, ISSN 0935-9648
DOI: 10.1002/adma.201802516

Analytical Modeling of Organic-Inorganic CH 3 NH 3 PbI 3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition

Author(s): Yanyun Ren, Valerio Milo, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, Xiaoning Zhao, Yichun Liu
Published in: Advanced Theory and Simulations, Issue 1/4, 2018, Page(s) 1700035, ISSN 2513-0390
DOI: 10.1002/adts.201700035

Computing of Temporal Information in Spiking Neural Networks with ReRAM Synapses

Author(s): Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro Spinelli, Daniele Ielmini
Published in: Faraday Discussions, 2018, ISSN 1359-6640
DOI: 10.1039/C8FD00097B

Physical unbiased generation of random numbers with coupled resistive switching devices

Author(s): S. Balatti, S. Ambrogio, R. Carboni, V. Milo, Z.-Q. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Published in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
DOI: 10.1109/TED.2016.2537792

Post-cycling degradation in metal-oxide bipolar resistive switching memory (RRAM)

Author(s): Z. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini
Published in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
DOI: 10.1109/TED.2016.2604370

Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM

Author(s): S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Published in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
DOI: 10.1109/TED.2016.2526647

Analytical modeling of current overshoot in oxide-based resistive switching memory (RRAM)

Author(s): S. Ambrogio V. Milo, Z. Wang, S. Balatti, and D. Ielmini
Published in: IEEE Electron Device Lett., 2016, ISSN 0741-3106
DOI: 10.1109/LED.2016.2600574

Bipolar switching in chalcogenide phase change memory

Author(s): P. Fantini; Varesi, E; Lacaita, A.L.; Boniardi, M.; Ciocchini, N.; Ielmini, D.; Laudato, M.
Published in: Scientific Reports, Issue 1, 2016, ISSN 2045-2322
DOI: 10.1038/srep29162

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

Author(s): Agostino ePirovano; Mario eLaudato; Paolo eFantini; Nicola eCiocchini; Daniele eIelmini; Valerio eMilo; Stefano eAmbrogio
Published in: Frontiers in Neuroscience, Vol 10 (2016), Issue 1, 2016, ISSN 1662-453X
DOI: 10.3389/fnins.2016.00056

Resistive Switching Memories based on Metal Oxides: Mechanisms, Reliability and Scaling

Author(s): Daniele Ielmini
Published in: Semiconductor Science and Technology, 2016, ISSN 0268-1242
DOI: 10.1088/0268-1242/31/6/063002

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Author(s): Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini
Published in: Faraday Discussions, Issue 213, 2019, Page(s) 87-98, ISSN 1359-6640
DOI: 10.1039/c8fd00106e

Solving matrix equations in one step with cross-point resistive arrays

Author(s): Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini
Published in: Proceedings of the National Academy of Sciences, Issue 116/10, 2019, Page(s) 4123-4128, ISSN 0027-8424
DOI: 10.1073/pnas.1815682116

Multilevel HfO 2 -based RRAM devices for low-power neuromorphic networks

Author(s): V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, Ch. Wenger, D. Ielmini
Published in: APL Materials, Issue 7/8, 2019, Page(s) 081120, ISSN 2166-532X
DOI: 10.1063/1.5108650

Emerging neuromorphic devices

Author(s): Daniele Ielmini, Stefano Ambrogio
Published in: Nanotechnology, Issue 31/9, 2020, Page(s) 092001, ISSN 0957-4484
DOI: 10.1088/1361-6528/ab554b

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

Author(s): Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 66/9, 2019, Page(s) 3802-3808, ISSN 0018-9383
DOI: 10.1109/TED.2019.2928888

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling

Author(s): Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 66/9, 2019, Page(s) 3795-3801, ISSN 0018-9383
DOI: 10.1109/TED.2019.2928890

Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks

Author(s): Irene Munoz-Martin, Stefano Bianchi, Giacomo Pedretti, Octavian Melnic, Stefano Ambrogio, Daniele Ielmini
Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Issue 5/1, 2019, Page(s) 58-66, ISSN 2329-9231
DOI: 10.1109/JXCDC.2019.2911135

Memristive and CMOS Devices for Neuromorphic Computing

Author(s): Valerio Milo, Gerardo Malavena, Christian Monzio Compagnoni, Daniele Ielmini
Published in: Materials, Issue 13/1, 2020, Page(s) 166, ISSN 1996-1944
DOI: 10.3390/ma13010166

Stochastic Memory Devices for Security and Computing

Author(s): Roberto Carboni, Daniele Ielmini
Published in: Advanced Electronic Materials, Issue 5/9, 2018, Page(s) 1900198, ISSN 2199-160X
DOI: 10.1002/aelm.201900198

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Author(s): Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini
Published in: Nature Communications, Issue 10/1, 2019, ISSN 2041-1723
DOI: 10.1038/s41467-018-07979-0

A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory

Author(s): Roberto Carboni, Elena Vernocchi, Manzar Siddik, Jon Harms, Andy Lyle, Gurtej Sandhu, Daniele Ielmini
Published in: IEEE Transactions on Electron Devices, Issue 66/10, 2019, Page(s) 4176-4182, ISSN 0018-9383
DOI: 10.1109/TED.2019.2933315

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

Author(s): G. Pedretti, V. Milo, S. Ambrogio, R. Carboni, S. Bianchi, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini
Published in: Scientific Reports, Issue 7/1, 2017, ISSN 2045-2322
DOI: 10.1038/s41598-017-05480-0

Attractor networks and associative memories with STDP learning in RRAM synapses

Author(s): V. Milo, D. Ielmini, E. Chicca
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 11.2.1-11.2.4
DOI: 10.1109/IEDM.2017.8268369

Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks

Author(s): V. Milo, G. Pedretti, M. Laudato, A. Bricalli, E. Ambrosi, S. Bianchi, E. Chicca, D. Ielmini
Published in: 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018, Page(s) 1-5
DOI: 10.1109/ISCAS.2018.8351824

Brain-inspired recurrent neural network with plastic RRAM synapses

Author(s): Valerio Milo, Elisabetta Chicca, Daniele Ielmini
Published in: 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018, Page(s) 1-5
DOI: 10.1109/ISCAS.2018.8351523

Modeling-based design of brain-inspired spiking neural networks with RRAM learning synapses

Author(s): G. Pedretti, S. Bianchi, V. Milo, A. Calderoni, N. Ramaswamy, D. Ielmini
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 28.1.1-28.1.4
DOI: 10.1109/IEDM.2017.8268467

Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory

Author(s): R. Carboni, S. Ambrogio, W. Chen, M. Siddik, J. Harms, A. Lyle, W. Kula, G. Sandhu, D. Ielmini
Published in: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Page(s) 21.6.1-21.6.4
DOI: 10.1109/IEDM.2016.7838468

Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity

Author(s): V. Milo, G. Pedretti, R. Carboni, A. Calderoni, N. Ramaswamy, S. Ambrogio, D. Ielmini
Published in: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Page(s) 16.8.1-16.8.4
DOI: 10.1109/IEDM.2016.7838435

SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio

Author(s): A. Bricalli, E. Ambrosi, M. Laudato, M. Maestro, R. Rodriguez, D. Ielmini
Published in: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Page(s) 4.3.1-4.3.4
DOI: 10.1109/IEDM.2016.7838344

Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-time unsupervised machine learning

Author(s): S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, D. Ielmini
Published in: 2016 IEEE Symposium on VLSI Technology, 2016, Page(s) 1-2
DOI: 10.1109/VLSIT.2016.7573432

Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability

Author(s): N. Ciocchini, M. Laudato, A. L. Lacaita, D. Ielmini, M. Boniardi, E. Varesi, P. Fantini
Published in: 2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, Page(s) 377-380
DOI: 10.1109/ESSDERC.2016.7599665

Neuromorphic computing with hybrid memristive/CMOS synapses for real-time learning

Author(s): D. Ielmini, S. Ambrogio, V. Milo, S. Balatti, Z.-Q. Wang
Published in: 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016, Page(s) 1386-1389
DOI: 10.1109/ISCAS.2016.7527508

Low-energy inference machine with multilevel HfO 2 RRAM arrays

Author(s): V. Milo, C. Zambelli, P. Olivo, E. Perez, O. G. Ossorio, Ch. Wenger, D. Ielmini
Published in: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Page(s) 174-177
DOI: 10.1109/ESSDERC.2019.8901818

Energy-efficient continual learning in hybrid supervised-unsupervised neural networks with PCM synapses

Author(s): S. Bianchi, I. Munoz-Martin, G. Pedretti, O. Melnic, S. Ambrogio, D. Ielmini
Published in: 2019 Symposium on VLSI Circuits, 2019, Page(s) 1-2
DOI: 10.23919/VLSIC.2019.8778001

Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing

Author(s): W. Wang, A. Bricalli, M. Laudato, E. Ambrosi, E. Covi, D. Ielmini
Published in: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, Page(s) 40.3.1-40.3.4
DOI: 10.1109/IEDM.2018.8614556

Fast Solution of Linear Systems with Analog Resistive Switching Memory (RRAM)

Author(s): Zhong Sun, Giacomo Pedretti, Daniele Ielmini
Published in: 2019 IEEE International Conference on Rebooting Computing (ICRC), 2019, Page(s) 1-5
DOI: 10.1109/ICRC.2019.8914709

Electrical Transport in crystalline and amorphous chalcogenide

Author(s): Daniele Ielmini
Published in: Phase Change Memory: Device Physics, Reliability and Applications, 2018

Neuromorphic computing with resistive switching memory devices

Author(s): Daniele Ielmini, Stefano Ambrogio
Published in: Advances in Non-Volatile Memory and Storage Technology, 2019, Page(s) 603-631
DOI: 10.1016/B978-0-08-102584-0.00017-6

Brain-Inspired Memristive Neural Networks for Unsupervised Learning

Author(s): Daniele Ielmini, Valerio Milo
Published in: Handbook of Memristor Networks, 2019, Page(s) 495-525
DOI: 10.1007/978-3-319-76375-0_17

Electrical Transport in Crystalline and Amorphous Chalcogenide

Author(s): Daniele Ielmini
Published in: Phase Change Memory, 2018, Page(s) 11-39
DOI: 10.1007/978-3-319-69053-7_2

Applications of Resistive Switching Memory as Hardware Security Primitive

Author(s): Roberto Carboni, Daniele Ielmini
Published in: Applications of Emerging Memory Technology - Beyond Storage, Issue 63, 2020, Page(s) 93-131
DOI: 10.1007/978-981-13-8379-3_4

Physical Models of Program and Read Fluctuations in Metal Oxide Resistive RAM

Author(s): Daniele Ielmini
Published in: ECS Trans., 2016, ISSN 1938-6737
DOI: 10.1149/07505.0019ecst