REsistive-Switch CompUting bEyond CMOS

Publikacje

Bipolar switching in chalcogenide phase change memory

Autorzy: N. Ciocchini, M. Laudato, M. Boniardi, E. Varesi, P. Fantini, A. L. Lacaita, D. Ielmini
Opublikowane w: Scientific Reports, Numer 6/1, 2016, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/srep29162

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Autorzy: Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/1, 2018, Strona(/y) 115-121, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2777986

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

Autorzy: Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/1, 2018, Strona(/y) 122-128, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2776085

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Autorzy: D. Ielmini, V. Milo
Opublikowane w: Journal of Computational Electronics, Numer 16/4, 2017, Strona(/y) 1121-1143, ISSN 1569-8025
Wydawca: Kluwer Academic Publishers
DOI: 10.1007/s10825-017-1101-9

Stochastic learning in neuromorphic hardware via spike timing dependent plasticity with RRAM synapses

Autorzy: Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Opublikowane w: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2017, Strona(/y) 1-1, ISSN 2156-3357
Wydawca: IEEE Circuits and Systems Society
DOI: 10.1109/JETCAS.2017.2773124

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

Autorzy: Daniele Ielmini
Opublikowane w: Microelectronic Engineering, Numer 190, 2018, Strona(/y) 44-53, ISSN 0167-9317
Wydawca: Elsevier BV
DOI: 10.1016/j.mee.2018.01.009

In-memory computing with resistive switching devices

Autorzy: Daniele Ielmini, H.-S. Philip Wong
Opublikowane w: Nature Electronics, Numer 1/6, 2018, Strona(/y) 333-343, ISSN 2520-1131
Wydawca: Springer Nature
DOI: 10.1038/s41928-018-0092-2

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

Autorzy: Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini
Opublikowane w: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2018, Strona(/y) 1-10, ISSN 1063-8210
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TVLSI.2018.2818978

Logic Computing with Stateful Neural Networks of Resistive Switches

Autorzy: Zhong Sun, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini
Opublikowane w: Advanced Materials, Numer 30/38, 2018, Strona(/y) 1802554, ISSN 0935-9648
Wydawca: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201802554

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Autorzy: Adnan Mehonic, Alexander L. Shluger, David Gao, Ilia Valov, Enrique Miranda, Daniele Ielmini, Alessandro Bricalli, Elia Ambrosi, Can Li, J. Joshua Yang, Qiangfei Xia, Anthony J. Kenyon
Opublikowane w: Advanced Materials, 2018, Strona(/y) 1801187, ISSN 0935-9648
Wydawca: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201801187

Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses

Autorzy: Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Opublikowane w: Science Advances, Numer 4/9, 2018, Strona(/y) eaat4752, ISSN 2375-2548
Wydawca: American Association for the Advancement of Science
DOI: 10.1126/sciadv.aat4752

Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory

Autorzy: Roberto Carboni, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Opublikowane w: IEEE Electron Device Letters, Numer 39/7, 2018, Strona(/y) 951-954, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2833543

Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime

Autorzy: Roberto Carboni, Stefano Ambrogio, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/6, 2018, Strona(/y) 2470-2478, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2822343

Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch

Autorzy: Ming Wang, Wei Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, Yaqing Liu, Pingqiang Cai, Hong Wang, Daniele Ielmini, Xiaodong Chen
Opublikowane w: Advanced Materials, Numer 30/33, 2018, Strona(/y) 1802516, ISSN 0935-9648
Wydawca: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201802516

Analytical Modeling of Organic-Inorganic CH 3 NH 3 PbI 3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition

Autorzy: Yanyun Ren, Valerio Milo, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, Xiaoning Zhao, Yichun Liu
Opublikowane w: Advanced Theory and Simulations, Numer 1/4, 2018, Strona(/y) 1700035, ISSN 2513-0390
Wydawca: Wiley VCH
DOI: 10.1002/adts.201700035

Computing of Temporal Information in Spiking Neural Networks with ReRAM Synapses

Autorzy: Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro Spinelli, Daniele Ielmini
Opublikowane w: Faraday Discussions, 2018, ISSN 1359-6640
Wydawca: Royal Society of Chemistry
DOI: 10.1039/C8FD00097B

Physical unbiased generation of random numbers with coupled resistive switching devices

Autorzy: S. Balatti, S. Ambrogio, R. Carboni, V. Milo, Z.-Q. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Opublikowane w: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2537792

Post-cycling degradation in metal-oxide bipolar resistive switching memory (RRAM)

Autorzy: Z. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini
Opublikowane w: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2604370

Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM

Autorzy: S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Opublikowane w: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2526647

Analytical modeling of current overshoot in oxide-based resistive switching memory (RRAM)

Autorzy: S. Ambrogio V. Milo, Z. Wang, S. Balatti, and D. Ielmini
Opublikowane w: IEEE Electron Device Lett., 2016, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2600574

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

Autorzy: Agostino ePirovano; Mario eLaudato; Paolo eFantini; Nicola eCiocchini; Daniele eIelmini; Valerio eMilo; Stefano eAmbrogio
Opublikowane w: Frontiers in Neuroscience, Vol 10 (2016), Numer 1, 2016, ISSN 1662-453X
Wydawca: Frontiers
DOI: 10.3389/fnins.2016.00056

Resistive Switching Memories based on Metal Oxides: Mechanisms, Reliability and Scaling

Autorzy: Daniele Ielmini
Opublikowane w: Semiconductor Science and Technology, 2016, ISSN 0268-1242
Wydawca: Institute of Physics Publishing
DOI: 10.1088/0268-1242/31/6/063002

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Autorzy: Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini
Opublikowane w: Faraday Discussions, Numer 213, 2019, Strona(/y) 87-98, ISSN 1359-6640
Wydawca: Royal Society of Chemistry
DOI: 10.1039/c8fd00106e

Solving matrix equations in one step with cross-point resistive arrays

Autorzy: Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini
Opublikowane w: Proceedings of the National Academy of Sciences, Numer 116/10, 2019, Strona(/y) 4123-4128, ISSN 0027-8424
Wydawca: National Academy of Sciences
DOI: 10.1073/pnas.1815682116

Multilevel HfO 2 -based RRAM devices for low-power neuromorphic networks

Autorzy: V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, Ch. Wenger, D. Ielmini
Opublikowane w: APL Materials, Numer 7/8, 2019, Strona(/y) 081120, ISSN 2166-532X
Wydawca: AIP
DOI: 10.1063/1.5108650

Emerging neuromorphic devices

Autorzy: Daniele Ielmini, Stefano Ambrogio
Opublikowane w: Nanotechnology, Numer 31/9, 2020, Strona(/y) 092001, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab554b

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

Autorzy: Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 66/9, 2019, Strona(/y) 3802-3808, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2928888

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling

Autorzy: Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 66/9, 2019, Strona(/y) 3795-3801, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2928890

Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks

Autorzy: Irene Munoz-Martin, Stefano Bianchi, Giacomo Pedretti, Octavian Melnic, Stefano Ambrogio, Daniele Ielmini
Opublikowane w: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Numer 5/1, 2019, Strona(/y) 58-66, ISSN 2329-9231
Wydawca: IEEE
DOI: 10.1109/JXCDC.2019.2911135

Memristive and CMOS Devices for Neuromorphic Computing

Autorzy: Valerio Milo, Gerardo Malavena, Christian Monzio Compagnoni, Daniele Ielmini
Opublikowane w: Materials, Numer 13/1, 2020, Strona(/y) 166, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma13010166

Stochastic Memory Devices for Security and Computing

Autorzy: Roberto Carboni, Daniele Ielmini
Opublikowane w: Advanced Electronic Materials, Numer 5/9, 2018, Strona(/y) 1900198, ISSN 2199-160X
Wydawca: Wiley VCH
DOI: 10.1002/aelm.201900198

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Autorzy: Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini
Opublikowane w: Nature Communications, Numer 10/1, 2019, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-018-07979-0

A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory

Autorzy: Roberto Carboni, Elena Vernocchi, Manzar Siddik, Jon Harms, Andy Lyle, Gurtej Sandhu, Daniele Ielmini
Opublikowane w: IEEE Transactions on Electron Devices, Numer 66/10, 2019, Strona(/y) 4176-4182, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2933315

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

Autorzy: G. Pedretti, V. Milo, S. Ambrogio, R. Carboni, S. Bianchi, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini
Opublikowane w: Scientific Reports, Numer 7/1, 2017, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/s41598-017-05480-0

Electrical Transport in crystalline and amorphous chalcogenide

Autorzy: Daniele Ielmini
Opublikowane w: Phase Change Memory: Device Physics, Reliability and Applications, 2018
Wydawca: Springer International Publishing AG

Neuromorphic computing with resistive switching memory devices

Autorzy: Daniele Ielmini, Stefano Ambrogio
Opublikowane w: Advances in Non-Volatile Memory and Storage Technology, 2019, Strona(/y) 603-631, ISBN 9780-081025840
Wydawca: Elsevier
DOI: 10.1016/B978-0-08-102584-0.00017-6

Brain-Inspired Memristive Neural Networks for Unsupervised Learning

Autorzy: Daniele Ielmini, Valerio Milo
Opublikowane w: Handbook of Memristor Networks, 2019, Strona(/y) 495-525, ISBN 978-3-319-76374-3
Wydawca: Springer International Publishing
DOI: 10.1007/978-3-319-76375-0_17

Electrical Transport in Crystalline and Amorphous Chalcogenide

Autorzy: Daniele Ielmini
Opublikowane w: Phase Change Memory, 2018, Strona(/y) 11-39, ISBN 978-3-319-69052-0
Wydawca: Springer International Publishing
DOI: 10.1007/978-3-319-69053-7_2

Applications of Resistive Switching Memory as Hardware Security Primitive

Autorzy: Roberto Carboni, Daniele Ielmini
Opublikowane w: Applications of Emerging Memory Technology - Beyond Storage, Numer 63, 2020, Strona(/y) 93-131, ISBN 978-981-13-8378-6
Wydawca: Springer Singapore
DOI: 10.1007/978-981-13-8379-3_4

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