REsistive-Switch CompUting bEyond CMOS

Informazioni relative al progetto

RESCUE

ID dell’accordo di sovvenzione: 648635

DOI

10.3030/648635

Progetto chiuso

Data della firma CE 30 Luglio 2015

Data di avvio 1 Agosto 2015

Data di completamento 31 Luglio 2020

Finanziato da

• EXCELLENT SCIENCE - European Research Council (ERC)

Costo totale

€ 1 998 113,12

Contributo UE

€ 1 998 113,12

Coordinato da

POLITECNICO DI MILANO
Italy

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Peer reviewed articles (34)

Bipolar switching in chalcogenide phase change memory

Autori: N. Ciocchini, M. Laudato, M. Boniardi, E. Varesi, P. Fantini, A. L. Lacaita, D. Ielmini
Pubblicato in: Scientific Reports, Numero 6/1, 2016, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/srep29162

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Autori: Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/1, 2018, Pagina/e 115-121, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2777986

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices

Autori: Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/1, 2018, Pagina/e 122-128, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2776085

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Autori: D. Ielmini, V. Milo
Pubblicato in: Journal of Computational Electronics, Numero 16/4, 2017, Pagina/e 1121-1143, ISSN 1569-8025
Editore: Kluwer Academic Publishers
DOI: 10.1007/s10825-017-1101-9

Stochastic learning in neuromorphic hardware via spike timing dependent plasticity with RRAM synapses

Autori: Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Pubblicato in: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2017, Pagina/e 1-1, ISSN 2156-3357
Editore: IEEE Circuits and Systems Society
DOI: 10.1109/JETCAS.2017.2773124

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

Autori: Daniele Ielmini
Pubblicato in: Microelectronic Engineering, Numero 190, 2018, Pagina/e 44-53, ISSN 0167-9317
Editore: Elsevier BV
DOI: 10.1016/j.mee.2018.01.009

In-memory computing with resistive switching devices

Autori: Daniele Ielmini, H.-S. Philip Wong
Pubblicato in: Nature Electronics, Numero 1/6, 2018, Pagina/e 333-343, ISSN 2520-1131
Editore: Springer Nature
DOI: 10.1038/s41928-018-0092-2

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

Autori: Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini
Pubblicato in: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2018, Pagina/e 1-10, ISSN 1063-8210
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TVLSI.2018.2818978

Logic Computing with Stateful Neural Networks of Resistive Switches

Autori: Zhong Sun, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini
Pubblicato in: Advanced Materials, Numero 30/38, 2018, Pagina/e 1802554, ISSN 0935-9648
Editore: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201802554

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Autori: Adnan Mehonic, Alexander L. Shluger, David Gao, Ilia Valov, Enrique Miranda, Daniele Ielmini, Alessandro Bricalli, Elia Ambrosi, Can Li, J. Joshua Yang, Qiangfei Xia, Anthony J. Kenyon
Pubblicato in: Advanced Materials, 2018, Pagina/e 1801187, ISSN 0935-9648
Editore: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201801187

Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses

Autori: Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Pubblicato in: Science Advances, Numero 4/9, 2018, Pagina/e eaat4752, ISSN 2375-2548
Editore: American Association for the Advancement of Science
DOI: 10.1126/sciadv.aat4752

Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory

Autori: Roberto Carboni, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Pubblicato in: IEEE Electron Device Letters, Numero 39/7, 2018, Pagina/e 951-954, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2018.2833543

Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime

Autori: Roberto Carboni, Stefano Ambrogio, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/6, 2018, Pagina/e 2470-2478, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2822343

Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch

Autori: Ming Wang, Wei Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, Yaqing Liu, Pingqiang Cai, Hong Wang, Daniele Ielmini, Xiaodong Chen
Pubblicato in: Advanced Materials, Numero 30/33, 2018, Pagina/e 1802516, ISSN 0935-9648
Editore: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201802516

Analytical Modeling of Organic-Inorganic CH 3 NH 3 PbI 3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition

Autori: Yanyun Ren, Valerio Milo, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, Xiaoning Zhao, Yichun Liu
Pubblicato in: Advanced Theory and Simulations, Numero 1/4, 2018, Pagina/e 1700035, ISSN 2513-0390
Editore: Wiley VCH
DOI: 10.1002/adts.201700035

Computing of Temporal Information in Spiking Neural Networks with ReRAM Synapses

Autori: Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro Spinelli, Daniele Ielmini
Pubblicato in: Faraday Discussions, 2018, ISSN 1359-6640
Editore: Royal Society of Chemistry
DOI: 10.1039/C8FD00097B

Physical unbiased generation of random numbers with coupled resistive switching devices

Autori: S. Balatti, S. Ambrogio, R. Carboni, V. Milo, Z.-Q. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Pubblicato in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2537792

Post-cycling degradation in metal-oxide bipolar resistive switching memory (RRAM)

Autori: Z. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini
Pubblicato in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2604370

Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM

Autori: S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Pubblicato in: IEEE Trans. Electron Devices, 2016, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2526647

Analytical modeling of current overshoot in oxide-based resistive switching memory (RRAM)

Autori: S. Ambrogio V. Milo, Z. Wang, S. Balatti, and D. Ielmini
Pubblicato in: IEEE Electron Device Lett., 2016, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2016.2600574

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

Autori: Agostino ePirovano; Mario eLaudato; Paolo eFantini; Nicola eCiocchini; Daniele eIelmini; Valerio eMilo; Stefano eAmbrogio
Pubblicato in: Frontiers in Neuroscience, Vol 10 (2016), Numero 1, 2016, ISSN 1662-453X
Editore: Frontiers
DOI: 10.3389/fnins.2016.00056

Resistive Switching Memories based on Metal Oxides: Mechanisms, Reliability and Scaling

Autori: Daniele Ielmini
Pubblicato in: Semiconductor Science and Technology, 2016, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/0268-1242/31/6/063002

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Autori: Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini
Pubblicato in: Faraday Discussions, Numero 213, 2019, Pagina/e 87-98, ISSN 1359-6640
Editore: Royal Society of Chemistry
DOI: 10.1039/c8fd00106e

Solving matrix equations in one step with cross-point resistive arrays

Autori: Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini
Pubblicato in: Proceedings of the National Academy of Sciences, Numero 116/10, 2019, Pagina/e 4123-4128, ISSN 0027-8424
Editore: National Academy of Sciences
DOI: 10.1073/pnas.1815682116

Multilevel HfO 2 -based RRAM devices for low-power neuromorphic networks

Autori: V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, Ch. Wenger, D. Ielmini
Pubblicato in: APL Materials, Numero 7/8, 2019, Pagina/e 081120, ISSN 2166-532X
Editore: AIP
DOI: 10.1063/1.5108650

Emerging neuromorphic devices

Autori: Daniele Ielmini, Stefano Ambrogio
Pubblicato in: Nanotechnology, Numero 31/9, 2020, Pagina/e 092001, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab554b

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

Autori: Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Pubblicato in: IEEE Transactions on Electron Devices, Numero 66/9, 2019, Pagina/e 3802-3808, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2928888

Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling

Autori: Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Pubblicato in: IEEE Transactions on Electron Devices, Numero 66/9, 2019, Pagina/e 3795-3801, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2928890

Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks

Autori: Irene Munoz-Martin, Stefano Bianchi, Giacomo Pedretti, Octavian Melnic, Stefano Ambrogio, Daniele Ielmini
Pubblicato in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Numero 5/1, 2019, Pagina/e 58-66, ISSN 2329-9231
Editore: IEEE
DOI: 10.1109/JXCDC.2019.2911135

Memristive and CMOS Devices for Neuromorphic Computing

Autori: Valerio Milo, Gerardo Malavena, Christian Monzio Compagnoni, Daniele Ielmini
Pubblicato in: Materials, Numero 13/1, 2020, Pagina/e 166, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma13010166

Stochastic Memory Devices for Security and Computing

Autori: Roberto Carboni, Daniele Ielmini
Pubblicato in: Advanced Electronic Materials, Numero 5/9, 2018, Pagina/e 1900198, ISSN 2199-160X
Editore: Wiley VCH
DOI: 10.1002/aelm.201900198

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Autori: Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini
Pubblicato in: Nature Communications, Numero 10/1, 2019, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-018-07979-0

A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory

Autori: Roberto Carboni, Elena Vernocchi, Manzar Siddik, Jon Harms, Andy Lyle, Gurtej Sandhu, Daniele Ielmini
Pubblicato in: IEEE Transactions on Electron Devices, Numero 66/10, 2019, Pagina/e 4176-4182, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2933315

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

Autori: G. Pedretti, V. Milo, S. Ambrogio, R. Carboni, S. Bianchi, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini
Pubblicato in: Scientific Reports, Numero 7/1, 2017, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-017-05480-0

Book chapters (5)

Electrical Transport in crystalline and amorphous chalcogenide

Autori: Daniele Ielmini
Pubblicato in: Phase Change Memory: Device Physics, Reliability and Applications, 2018
Editore: Springer International Publishing AG

Neuromorphic computing with resistive switching memory devices

Autori: Daniele Ielmini, Stefano Ambrogio
Pubblicato in: Advances in Non-Volatile Memory and Storage Technology, 2019, Pagina/e 603-631, ISBN 9780-081025840
Editore: Elsevier
DOI: 10.1016/B978-0-08-102584-0.00017-6

Brain-Inspired Memristive Neural Networks for Unsupervised Learning

Autori: Daniele Ielmini, Valerio Milo
Pubblicato in: Handbook of Memristor Networks, 2019, Pagina/e 495-525, ISBN 978-3-319-76374-3
Editore: Springer International Publishing
DOI: 10.1007/978-3-319-76375-0_17

Electrical Transport in Crystalline and Amorphous Chalcogenide

Autori: Daniele Ielmini
Pubblicato in: Phase Change Memory, 2018, Pagina/e 11-39, ISBN 978-3-319-69052-0
Editore: Springer International Publishing
DOI: 10.1007/978-3-319-69053-7_2

Applications of Resistive Switching Memory as Hardware Security Primitive

Autori: Roberto Carboni, Daniele Ielmini
Pubblicato in: Applications of Emerging Memory Technology - Beyond Storage, Numero 63, 2020, Pagina/e 93-131, ISBN 978-981-13-8378-6
Editore: Springer Singapore
DOI: 10.1007/978-981-13-8379-3_4