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Doping on Demand: precise and permanent control of the Fermi level in nanocrystal assemblies

Pubblicazioni

Permanent Electrochemical Doping of Quantum Dots and Semiconductor Polymers

Autori: Solrun Gudjonsdottir, Arjan J. Houtepen
Pubblicato in: Advanced Functional Materials, Numero 30/49, 2020, Pagina/e 2004789, ISSN 1616-301X
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202004789

Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films

Autori: Ward van der Stam, Gianluca Grimaldi, Jaco J. Geuchies, Solrun Gudjonsdottir, Pieter T. van Uffelen, Mandy van Overeem, Baldur Brynjarsson, Nicholas Kirkwood, Arjan J. Houtepen
Pubblicato in: Chemistry of Materials, Numero 31/20, 2019, Pagina/e 8484-8493, ISSN 0897-4756
Editore: American Chemical Society
DOI: 10.1021/acs.chemmater.9b02908

Locating and Controlling the Zn Content in In(Zn)P Quantum Dots

Autori: Nicholas Kirkwood, Annick De Backer, Thomas Altantzis, Naomi Winckelmans, Alessandro Longo, Felipe V. Antolinez, Freddy T. Rabouw, Luca De Trizio, Jaco J. Geuchies, Jence T. Mulder, Nicolas Renaud, Sara Bals, Liberato Manna, Arjan J. Houtepen
Pubblicato in: Chemistry of Materials, Numero 32/1, 2019, Pagina/e 557-565, ISSN 0897-4756
Editore: American Chemical Society
DOI: 10.1021/acs.chemmater.9b04407

Tuning and Probing the Distribution of Cu + and Cu 2+ Trap States Responsible for Broad-Band Photoluminescence in CuInS 2 Nanocrystals

Autori: Ward van der Stam, Max de Graaf, Solrun Gudjonsdottir, Jaco J. Geuchies, Jurgen J. Dijkema, Nicholas Kirkwood, Wiel H. Evers, Alessandro Longo, Arjan J. Houtepen
Pubblicato in: ACS Nano, Numero 12/11, 2018, Pagina/e 11244-11253, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b05843

Enhancing the stability of the electron density in electrochemically doped ZnO quantum dots

Autori: Solrun Gudjonsdottir, Christel Koopman, Arjan J. Houtepen
Pubblicato in: The Journal of Chemical Physics, Numero 151/14, 2019, Pagina/e 144708, ISSN 0021-9606
Editore: American Institute of Physics
DOI: 10.1063/1.5124534

Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry

Autori: Maryam Alimoradi Jazi, Aditya Kulkarni, Sophia Buhbut Sinai, Joep L. Peters, Eva Geschiere, Michele Failla, Christophe Delerue, Arjan J. Houtepen, Laurens D. A. Siebbeles, Daniel Vanmaekelbergh
Pubblicato in: The Journal of Physical Chemistry C, Numero 123/22, 2019, Pagina/e 14058-14066, ISSN 1932-7447
Editore: American Chemical Society
DOI: 10.1021/acs.jpcc.9b03549

Spectroelectrochemical Signatures of Surface Trap Passivation on CdTe Nanocrystals

Autori: Ward van der Stam, Indy du Fossé, Gianluca Grimaldi, Julius O. V. Monchen, Nicholas Kirkwood, Arjan J. Houtepen
Pubblicato in: Chemistry of Materials, Numero 30/21, 2018, Pagina/e 8052-8061, ISSN 0897-4756
Editore: American Chemical Society
DOI: 10.1021/acs.chemmater.8b03893

Engineering the Band Alignment in QD Heterojunction Films via Ligand Exchange

Autori: Gianluca Grimaldi, Mark J. van den Brom, Indy du Fossé, Ryan W. Crisp, Nicholas Kirkwood, Solrun Gudjonsdottir, Jaco J. Geuchies, Sachin Kinge, Laurens D. A. Siebbeles, Arjan J. Houtepen
Pubblicato in: The Journal of Physical Chemistry C, Numero 123/49, 2019, Pagina/e 29599-29608, ISSN 1932-7447
Editore: American Chemical Society
DOI: 10.1021/acs.jpcc.9b09470

Spectroscopic Evidence for the Contribution of Holes to the Bleach of Cd-Chalcogenide Quantum Dots

Autori: Gianluca Grimaldi, Jaco J. Geuchies, Ward van der Stam, Indy du Fossé, Baldur Brynjarsson, Nicholas Kirkwood, Sachin Kinge, Laurens D.A. Siebbeles, Arjan J. Houtepen
Pubblicato in: Nano Letters, Numero 19/5, 2019, Pagina/e 3002-3010, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.9b00164

On the Stability of Permanent Electrochemical Doping of Quantum Dot, Fullerene and Conductive Polymer Films in Frozen Electrolytes for Use in Semiconductor Devices

Autori: Solrun Gudjonsdottir, Ward van der Stam, Christel Koopman, Bob Kwakkenbos, Arjan Houtepen
Pubblicato in: Proceedings of the nanoGe Fall Meeting 2019, 2019, ISSN 0000-0000
Editore: American Chemical Society
DOI: 10.29363/nanoge.ngfm.2019.145

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

Autori: Francesca Pietra, Nicholas Kirkwood, Luca De Trizio, Anne W. Hoekstra, Lennart Kleibergen, Nicolas Renaud, Rolf Koole, Patrick Baesjou, Liberato Manna, Arjan J. Houtepen
Pubblicato in: Chemistry of Materials, Numero 29/12, 2017, Pagina/e 5192-5199, ISSN 0897-4756
Editore: American Chemical Society
DOI: 10.1021/acs.chemmater.7b00848

On the Origin of Surface Traps in Colloidal II–VI Semiconductor Nanocrystals

Autori: Arjan J. Houtepen, Zeger Hens, Jonathan S. Owen, Ivan Infante
Pubblicato in: Chemistry of Materials, Numero 29/2, 2017, Pagina/e 752-761, ISSN 0897-4756
Editore: American Chemical Society
DOI: 10.1021/acs.chemmater.6b04648

Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

Autori: Frank C. M. Spoor, Gianluca Grimaldi, Christophe Delerue, Wiel H. Evers, Ryan W. Crisp, Pieter Geiregat, Zeger Hens, Arjan J. Houtepen, Laurens D. A. Siebbeles
Pubblicato in: ACS Nano, Numero 12/5, 2018, Pagina/e 4796-4802, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b01530

The Role of Dopant Ions on Charge Injection and Transport in Electrochemically Doped Quantum Dot Films

Autori: Solrun Gudjonsdottir, Ward van der Stam, Nicholas Kirkwood, Wiel H. Evers, Arjan J. Houtepen
Pubblicato in: Journal of the American Chemical Society, Numero 140/21, 2018, Pagina/e 6582-6590, ISSN 0002-7863
Editore: American Chemical Society
DOI: 10.1021/jacs.8b01347

Hot-electron transfer in quantum-dot heterojunction films

Autori: Gianluca Grimaldi, Ryan W. Crisp, Stephanie ten Brinck, Felipe Zapata, Michiko van Ouwendorp, Nicolas Renaud, Nicholas Kirkwood, Wiel H. Evers, Sachin Kinge, Ivan Infante, Laurens D. A. Siebbeles, Arjan J. Houtepen
Pubblicato in: Nature Communications, Numero 9/1, 2018, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-018-04623-9

Selective antimony reduction initiating the nucleation and growth of InSb quantum dots

Autori: Ryan W. Crisp, Gianluca Grimaldi, Luca De Trizio, Wiel H. Evers, Nicholas Kirkwood, Sachin Kinge, Liberato Manna, Laurens D. A. Siebbeles, Arjan J. Houtepen
Pubblicato in: Nanoscale, Numero 10/23, 2018, Pagina/e 11110-11116, ISSN 2040-3364
Editore: Royal Society of Chemistry
DOI: 10.1039/C8NR02381F

Switching between Plasmonic and Fluorescent Copper Sulfide Nanocrystals

Autori: Ward van der Stam, Solrun Gudjonsdottir, Wiel H. Evers, Arjan J. Houtepen
Pubblicato in: Journal of the American Chemical Society, Numero 139/37, 2017, Pagina/e 13208-13217, ISSN 0002-7863
Editore: American Chemical Society
DOI: 10.1021/jacs.7b07788

Highly Photoconductive InP Quantum Dots Films and Solar Cells

Autori: Ryan W. Crisp, Nicholas Kirkwood, Gianluca Grimaldi, Sachin Kinge, Laurens D. A. Siebbeles, Arjan J. Houtepen
Pubblicato in: ACS Applied Energy Materials, Numero 1/11, 2018, Pagina/e 6569-6576, ISSN 2574-0962
Editore: American Chemical Society
DOI: 10.1021/acsaem.8b01453

Quantitative Electrochemical Control over Optical Gain in Quantum-Dot Solids

Autori: Jaco J. Geuchies, Baldur Brynjarsson, Gianluca Grimaldi, Solrun Gudjonsdottir, Ward van der Stam, Wiel H. Evers, Arjan J. Houtepen
Pubblicato in: ACS Nano, Numero 15/1, 2021, Pagina/e 377-386, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.0c07365

Finding and Fixing Traps in II–VI and III–V Colloidal Quantum Dots: The Importance of Z-Type Ligand Passivation

Autori: Nicholas Kirkwood, Julius O. V. Monchen, Ryan W. Crisp, Gianluca Grimaldi, Huub A. C. Bergstein, Indy du Fossé, Ward van der Stam, Ivan Infante, Arjan J. Houtepen
Pubblicato in: Journal of the American Chemical Society, Numero 140/46, 2018, Pagina/e 15712-15723, ISSN 0002-7863
Editore: American Chemical Society
DOI: 10.1021/jacs.8b07783

Role of Surface Reduction in the Formation of Traps in n -Doped II–VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface

Autori: Indy du Fossé, Stephanie ten Brinck, Ivan Infante, Arjan J. Houtepen
Pubblicato in: Chemistry of Materials, Numero 31/12, 2019, Pagina/e 4575-4583, ISSN 0897-4756
Editore: American Chemical Society
DOI: 10.1021/acs.chemmater.9b01395

Diritti di proprietà intellettuale

Electrochemical doping of semiconductor Materials,

Numero candidatura/pubblicazione: N 2022110
Data: 2018-11-30

Electrochemical doping of semiconductor Materials,

Numero candidatura/pubblicazione: N 2022110
Data: 2018-11-30
Candidato/i: TECHNISCHE UNIVERSITEIT DELFT

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