Doping on Demand: precise and permanent control of the Fermi level in nanocrystal assemblies

Publikacje

Permanent Electrochemical Doping of Quantum Dots and Semiconductor Polymers

Autorzy: Solrun Gudjonsdottir, Arjan J. Houtepen
Opublikowane w: Advanced Functional Materials, Numer 30/49, 2020, Strona(/y) 2004789, ISSN 1616-301X
Wydawca: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202004789

Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films

Autorzy: Ward van der Stam, Gianluca Grimaldi, Jaco J. Geuchies, Solrun Gudjonsdottir, Pieter T. van Uffelen, Mandy van Overeem, Baldur Brynjarsson, Nicholas Kirkwood, Arjan J. Houtepen
Opublikowane w: Chemistry of Materials, Numer 31/20, 2019, Strona(/y) 8484-8493, ISSN 0897-4756
Wydawca: American Chemical Society
DOI: 10.1021/acs.chemmater.9b02908

Locating and Controlling the Zn Content in In(Zn)P Quantum Dots

Autorzy: Nicholas Kirkwood, Annick De Backer, Thomas Altantzis, Naomi Winckelmans, Alessandro Longo, Felipe V. Antolinez, Freddy T. Rabouw, Luca De Trizio, Jaco J. Geuchies, Jence T. Mulder, Nicolas Renaud, Sara Bals, Liberato Manna, Arjan J. Houtepen
Opublikowane w: Chemistry of Materials, Numer 32/1, 2019, Strona(/y) 557-565, ISSN 0897-4756
Wydawca: American Chemical Society
DOI: 10.1021/acs.chemmater.9b04407

Tuning and Probing the Distribution of Cu + and Cu 2+ Trap States Responsible for Broad-Band Photoluminescence in CuInS 2 Nanocrystals

Autorzy: Ward van der Stam, Max de Graaf, Solrun Gudjonsdottir, Jaco J. Geuchies, Jurgen J. Dijkema, Nicholas Kirkwood, Wiel H. Evers, Alessandro Longo, Arjan J. Houtepen
Opublikowane w: ACS Nano, Numer 12/11, 2018, Strona(/y) 11244-11253, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.8b05843

Enhancing the stability of the electron density in electrochemically doped ZnO quantum dots

Autorzy: Solrun Gudjonsdottir, Christel Koopman, Arjan J. Houtepen
Opublikowane w: The Journal of Chemical Physics, Numer 151/14, 2019, Strona(/y) 144708, ISSN 0021-9606
Wydawca: American Institute of Physics
DOI: 10.1063/1.5124534

Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry

Autorzy: Maryam Alimoradi Jazi, Aditya Kulkarni, Sophia Buhbut Sinai, Joep L. Peters, Eva Geschiere, Michele Failla, Christophe Delerue, Arjan J. Houtepen, Laurens D. A. Siebbeles, Daniel Vanmaekelbergh
Opublikowane w: The Journal of Physical Chemistry C, Numer 123/22, 2019, Strona(/y) 14058-14066, ISSN 1932-7447
Wydawca: American Chemical Society
DOI: 10.1021/acs.jpcc.9b03549

Spectroelectrochemical Signatures of Surface Trap Passivation on CdTe Nanocrystals

Autorzy: Ward van der Stam, Indy du Fossé, Gianluca Grimaldi, Julius O. V. Monchen, Nicholas Kirkwood, Arjan J. Houtepen
Opublikowane w: Chemistry of Materials, Numer 30/21, 2018, Strona(/y) 8052-8061, ISSN 0897-4756
Wydawca: American Chemical Society
DOI: 10.1021/acs.chemmater.8b03893

Engineering the Band Alignment in QD Heterojunction Films via Ligand Exchange

Autorzy: Gianluca Grimaldi, Mark J. van den Brom, Indy du Fossé, Ryan W. Crisp, Nicholas Kirkwood, Solrun Gudjonsdottir, Jaco J. Geuchies, Sachin Kinge, Laurens D. A. Siebbeles, Arjan J. Houtepen
Opublikowane w: The Journal of Physical Chemistry C, Numer 123/49, 2019, Strona(/y) 29599-29608, ISSN 1932-7447
Wydawca: American Chemical Society
DOI: 10.1021/acs.jpcc.9b09470

Spectroscopic Evidence for the Contribution of Holes to the Bleach of Cd-Chalcogenide Quantum Dots

Autorzy: Gianluca Grimaldi, Jaco J. Geuchies, Ward van der Stam, Indy du Fossé, Baldur Brynjarsson, Nicholas Kirkwood, Sachin Kinge, Laurens D.A. Siebbeles, Arjan J. Houtepen
Opublikowane w: Nano Letters, Numer 19/5, 2019, Strona(/y) 3002-3010, ISSN 1530-6984
Wydawca: American Chemical Society
DOI: 10.1021/acs.nanolett.9b00164

On the Stability of Permanent Electrochemical Doping of Quantum Dot, Fullerene and Conductive Polymer Films in Frozen Electrolytes for Use in Semiconductor Devices

Autorzy: Solrun Gudjonsdottir, Ward van der Stam, Christel Koopman, Bob Kwakkenbos, Arjan Houtepen
Opublikowane w: Proceedings of the nanoGe Fall Meeting 2019, 2019, ISSN 0000-0000
Wydawca: American Chemical Society
DOI: 10.29363/nanoge.ngfm.2019.145

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

Autorzy: Francesca Pietra, Nicholas Kirkwood, Luca De Trizio, Anne W. Hoekstra, Lennart Kleibergen, Nicolas Renaud, Rolf Koole, Patrick Baesjou, Liberato Manna, Arjan J. Houtepen
Opublikowane w: Chemistry of Materials, Numer 29/12, 2017, Strona(/y) 5192-5199, ISSN 0897-4756
Wydawca: American Chemical Society
DOI: 10.1021/acs.chemmater.7b00848

On the Origin of Surface Traps in Colloidal II–VI Semiconductor Nanocrystals

Autorzy: Arjan J. Houtepen, Zeger Hens, Jonathan S. Owen, Ivan Infante
Opublikowane w: Chemistry of Materials, Numer 29/2, 2017, Strona(/y) 752-761, ISSN 0897-4756
Wydawca: American Chemical Society
DOI: 10.1021/acs.chemmater.6b04648

Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

Autorzy: Frank C. M. Spoor, Gianluca Grimaldi, Christophe Delerue, Wiel H. Evers, Ryan W. Crisp, Pieter Geiregat, Zeger Hens, Arjan J. Houtepen, Laurens D. A. Siebbeles
Opublikowane w: ACS Nano, Numer 12/5, 2018, Strona(/y) 4796-4802, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.8b01530

The Role of Dopant Ions on Charge Injection and Transport in Electrochemically Doped Quantum Dot Films

Autorzy: Solrun Gudjonsdottir, Ward van der Stam, Nicholas Kirkwood, Wiel H. Evers, Arjan J. Houtepen
Opublikowane w: Journal of the American Chemical Society, Numer 140/21, 2018, Strona(/y) 6582-6590, ISSN 0002-7863
Wydawca: American Chemical Society
DOI: 10.1021/jacs.8b01347

Hot-electron transfer in quantum-dot heterojunction films

Autorzy: Gianluca Grimaldi, Ryan W. Crisp, Stephanie ten Brinck, Felipe Zapata, Michiko van Ouwendorp, Nicolas Renaud, Nicholas Kirkwood, Wiel H. Evers, Sachin Kinge, Ivan Infante, Laurens D. A. Siebbeles, Arjan J. Houtepen
Opublikowane w: Nature Communications, Numer 9/1, 2018, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-018-04623-9

Selective antimony reduction initiating the nucleation and growth of InSb quantum dots

Autorzy: Ryan W. Crisp, Gianluca Grimaldi, Luca De Trizio, Wiel H. Evers, Nicholas Kirkwood, Sachin Kinge, Liberato Manna, Laurens D. A. Siebbeles, Arjan J. Houtepen
Opublikowane w: Nanoscale, Numer 10/23, 2018, Strona(/y) 11110-11116, ISSN 2040-3364
Wydawca: Royal Society of Chemistry
DOI: 10.1039/C8NR02381F

Switching between Plasmonic and Fluorescent Copper Sulfide Nanocrystals

Autorzy: Ward van der Stam, Solrun Gudjonsdottir, Wiel H. Evers, Arjan J. Houtepen
Opublikowane w: Journal of the American Chemical Society, Numer 139/37, 2017, Strona(/y) 13208-13217, ISSN 0002-7863
Wydawca: American Chemical Society
DOI: 10.1021/jacs.7b07788

Highly Photoconductive InP Quantum Dots Films and Solar Cells

Autorzy: Ryan W. Crisp, Nicholas Kirkwood, Gianluca Grimaldi, Sachin Kinge, Laurens D. A. Siebbeles, Arjan J. Houtepen
Opublikowane w: ACS Applied Energy Materials, Numer 1/11, 2018, Strona(/y) 6569-6576, ISSN 2574-0962
Wydawca: American Chemical Society
DOI: 10.1021/acsaem.8b01453

Quantitative Electrochemical Control over Optical Gain in Quantum-Dot Solids

Autorzy: Jaco J. Geuchies, Baldur Brynjarsson, Gianluca Grimaldi, Solrun Gudjonsdottir, Ward van der Stam, Wiel H. Evers, Arjan J. Houtepen
Opublikowane w: ACS Nano, Numer 15/1, 2021, Strona(/y) 377-386, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.0c07365

Finding and Fixing Traps in II–VI and III–V Colloidal Quantum Dots: The Importance of Z-Type Ligand Passivation

Autorzy: Nicholas Kirkwood, Julius O. V. Monchen, Ryan W. Crisp, Gianluca Grimaldi, Huub A. C. Bergstein, Indy du Fossé, Ward van der Stam, Ivan Infante, Arjan J. Houtepen
Opublikowane w: Journal of the American Chemical Society, Numer 140/46, 2018, Strona(/y) 15712-15723, ISSN 0002-7863
Wydawca: American Chemical Society
DOI: 10.1021/jacs.8b07783

Role of Surface Reduction in the Formation of Traps in n -Doped II–VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface

Autorzy: Indy du Fossé, Stephanie ten Brinck, Ivan Infante, Arjan J. Houtepen
Opublikowane w: Chemistry of Materials, Numer 31/12, 2019, Strona(/y) 4575-4583, ISSN 0897-4756
Wydawca: American Chemical Society
DOI: 10.1021/acs.chemmater.9b01395

Prawa własności intelektualnej

Electrochemical doping of semiconductor Materials,

Numer wniosku/publikacji: N 2022110
Data: 2018-11-30

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