Nanonets2Sense

Resultado final

Report on dissemination activities during first reporting period

It will present all dissemination actions performed during the first period for the different targets.

Report on dissemination activities during second reporting period

It will present all dissemination actions performed during the second period for the different targets.

The project website will be an important tool for scientific project management, internal communication and project communication. It will include: • A Public area with dedicated parts for each target (Public, Scientifics, Policy Makers, …) • A Consortium area, where all relevant project documentation (such as scientific results, records of samples and masks, official documents, reports, drafts of publications, minutes of meetings) will be available. European Commission and reviewers will have access to specified pages of the Consortium area (such as Publications and Deliverables)

Publicaciones

Comprehensive study of hydrothermally grown ZnO nanowires

Autores: Thomas Demes, Céline Ternon, David Riassetto, Valérie Stambouli, Michel Langlet
Publicado en: Journal of Materials Science, Edición 51/23, 2016, Página(s) 10652-10661, ISSN 0022-2461
Editor: Kluwer Academic Publishers
DOI: 10.1007/s10853-016-0287-8

Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

Autores: Ganesh Jayakumar, Maxime Legallais, Per-Erik Hellström, Mireille Mouis, Isabelle Pignot-Paintrand, Valérie Stambouli, Céline Ternon, Mikael Östling
Publicado en: Nanotechnology, Edición 30/18, 2019, Página(s) 184002, ISSN 0957-4484
Editor: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aaffa5

Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

Autores: G Jayakumar, M Östling
Publicado en: Nanotechnology, Edición 30/22, 2019, Página(s) 225502, ISSN 0957-4484
Editor: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab0469

Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors

Autores: G. Jayakumar, P.-E. Hellström, M. Östling
Publicado en: Microelectronic Engineering, Edición 212, 2019, Página(s) 13-20, ISSN 0167-9317
Editor: Elsevier BV
DOI: 10.1016/j.mee.2019.03.006

Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

Autores: Ganesh Jayakumar, Per-Erik Hellström, Mikael Östling
Publicado en: Micromachines, Edición 9/11, 2018, Página(s) 544, ISSN 2072-666X
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi9110544

First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

Autores: Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Valérie Stambouli, Mireille Mouis, Bassem Salem, Céline Ternon
Publicado en: Materials Research Express, Edición 6/1, 2019, Página(s) 016301, ISSN 2053-1591
Editor: IOP
DOI: 10.1088/2053-1591/aae0d5

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

Autores: G. Ghibaudo, G. Pananakakis
Publicado en: Composants nanoélectroniques, Edición 2/1, 2019, ISSN 2516-3914
Editor: ISTE
DOI: 10.21494/iste.op.2019.0347

Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes

Autores: Muhammed Kayaharman, Maxime Legallais, Celine Ternon, Sangtak Park, Bassem Salem, Mehrdad Irannejad, Eihab Abdel-Rahman, Mustafa Yavuz
Publicado en: Proceedings, Edición 2/3, 2018, Página(s) 124, ISSN 2504-3900
Editor: MDPI
DOI: 10.3390/ecsa-4-04925

Optimizing Paste Formulation for Improving the Performances of CMOS-Based MOx Chemiresistors Prepared by Ink-Jet Printing

Autores: Claudio Zuliani, Lisa Jerg, Alison Hart, Wolfram Simmendinger, Malick Camara, Zeeshan Ali
Publicado en: Proceedings, Edición 2/13, 2018, Página(s) 774, ISSN 2504-3900
Editor: MDPI
DOI: 10.3390/proceedings2130774

An innovative large scale integration of silicon nanowire-based field effect transistors

Autores: M. Legallais, T.T.T. Nguyen, M. Mouis, B. Salem, E. Robin, P. Chenevier, C. Ternon
Publicado en: Solid-State Electronics, Edición 143, 2018, Página(s) 97-102, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.11.008

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

Autores: T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo
Publicado en: Solid-State Electronics, Edición 143, 2018, Página(s) 83-89, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.11.013

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Autores: Thomas Demes, Céline Ternon, Fanny Morisot, David Riassetto, Maxime Legallais, Hervé Roussel, Michel Langlet
Publicado en: Applied Surface Science, Edición 410, 2017, Página(s) 423-431, ISSN 0169-4332
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2017.03.086

Material Engineering of Percolating Silicon Nanowire Networks for Reliable and Efficient Electronic Devices

Autores: Maxime Legallais, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Mireille Mouis, Bassem Salem and Céline Ternon
Publicado en: 2016
Editor: IOP

DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane

Autores: Demes-Causse, T and Morisot, F and Legallais, M and Calais, A and Pernot, E and Pignot-Paintrand, I and Ternon, C and Stambouli, V.
Publicado en: Materials Today, Proc, 2016
Editor: Elsevier

Fabrication et caractérisation de transistors à base de nanonet de silicium pour la détection électrique de l’ADN

Autores: Duc-Trung NGUYEN
Publicado en: 2018
Editor: à renseigner

Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Autores: Morisot F., Nguyen V. H., Montemont C., Maindron T., Muñoz-Rojas D., Mouis M., Langlet M., Ternon C.
Publicado en: Nanotechnology, 2016
Editor: IOP

Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets.

Autores: Thi Thu Thuy Nguyen, Thibauld Cazimajou, Maxime Legallais, Tabassom Arjmand, Viet Huong Nguyen, Mireille Mouis, Bassem Salem, Eric Robin, and Céline Ternon
Publicado en: Nano Futures, 2016
Editor: IOP

ZnO based Nanowire Network for Gas Sensing Applications

Autores: Fanny MORISOT, Claudio ZULIANI, Joaquim LUQUE1, Zeeshan ALI, , Mireille MOUIS, Viet Huong NGUYEN, David MUNOZ-ROJAS, Oumayma LOURHZAL, Michael TEXIER, Thomas W. CORNELIUS, Celine TERNON
Publicado en: Material Research Express, 2016
Editor: IOP

Master thesis dissertation: Fonctionnalisation de nanonets de ZnO, pour la détection électrique d’ADN sans marquage, validée par détection de fluorescence

Autores: F. Morisot
Publicado en: 2016
Editor: Université Bourgogne-Franche Comté

Engineering level dissertation: Nanonets de ZnO pour la détection électrique d’acétone

Autores: F. Morisot
Publicado en: 2016
Editor: ESIREM Dijon

Conception, étude et modélisation d’une nouvelle génération de transistors à nanofils de silicium pour applications biocapteurs

Autores: Maxime LEGALLAIS
Publicado en: Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2017, 2018
Editor: à renseigner

Croissance, assemblage et intégration collective de nanofils deZnO : Application à la biodétection

Autores: T. Demes
Publicado en: 2017
Editor: Communauté Université Grenoble Alpes

Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

Autores: T. Cazimajou, M. Mouis, G. Ghibaudo
Publicado en: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, Página(s) 1-3, ISBN 978-1-5386-4811-7
Editor: IEEE
DOI: 10.1109/ulis.2018.8354760

Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors

Autores: T Cazimajou, TTT Nguyen, M Legallais, M Mouis, CTernon, G Ghibaudo
Publicado en: Proceedings of EUROSOI-ULIS, 2019, 2019
Editor: IEEE

Low frequency noise characterization of Si Nanonet Field Effect Transistors

Autores: T Cazimajou, C Theodorou, M Mouis, TTT Nguyen, M Legallais, C Ternon and G Ghibaudo
Publicado en: Proceedings of ICNF 2019 (Neufchatel, Switzerland), 2019
Editor: IEEE

Toward the integration of Si nanonets into FETs for biosensing applications

Autores: M. Legallais, T. T. T. Nguyen, M. Mouis, B. Salem, C. Ternon
Publicado en: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Página(s) 231-234, ISBN 978-1-5090-5313-1
Editor: IEEE
DOI: 10.1109/ULIS.2017.7962570

Electrical characterization of percolating silicon nanonet FETs for sensing applications

Autores: T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo
Publicado en: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Página(s) 23-26, ISBN 978-1-5090-5313-1
Editor: IEEE
DOI: 10.1109/ULIS.2017.7962591

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