Nanonets2Sense

Rezultaty

Report on dissemination activities during first reporting period

It will present all dissemination actions performed during the first period for the different targets.

Report on dissemination activities during second reporting period

It will present all dissemination actions performed during the second period for the different targets.

The project website will be an important tool for scientific project management, internal communication and project communication. It will include: • A Public area with dedicated parts for each target (Public, Scientifics, Policy Makers, …) • A Consortium area, where all relevant project documentation (such as scientific results, records of samples and masks, official documents, reports, drafts of publications, minutes of meetings) will be available. European Commission and reviewers will have access to specified pages of the Consortium area (such as Publications and Deliverables)

Publikacje

Comprehensive study of hydrothermally grown ZnO nanowires

Autorzy: Thomas Demes, Céline Ternon, David Riassetto, Valérie Stambouli, Michel Langlet
Opublikowane w: Journal of Materials Science, Numer 51/23, 2016, Strona(/y) 10652-10661, ISSN 0022-2461
Wydawca: Kluwer Academic Publishers
DOI: 10.1007/s10853-016-0287-8

Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

Autorzy: Ganesh Jayakumar, Maxime Legallais, Per-Erik Hellström, Mireille Mouis, Isabelle Pignot-Paintrand, Valérie Stambouli, Céline Ternon, Mikael Östling
Opublikowane w: Nanotechnology, Numer 30/18, 2019, Strona(/y) 184002, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aaffa5

Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

Autorzy: G Jayakumar, M Östling
Opublikowane w: Nanotechnology, Numer 30/22, 2019, Strona(/y) 225502, ISSN 0957-4484
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab0469

Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors

Autorzy: G. Jayakumar, P.-E. Hellström, M. Östling
Opublikowane w: Microelectronic Engineering, Numer 212, 2019, Strona(/y) 13-20, ISSN 0167-9317
Wydawca: Elsevier BV
DOI: 10.1016/j.mee.2019.03.006

Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

Autorzy: Ganesh Jayakumar, Per-Erik Hellström, Mikael Östling
Opublikowane w: Micromachines, Numer 9/11, 2018, Strona(/y) 544, ISSN 2072-666X
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi9110544

First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

Autorzy: Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Valérie Stambouli, Mireille Mouis, Bassem Salem, Céline Ternon
Opublikowane w: Materials Research Express, Numer 6/1, 2019, Strona(/y) 016301, ISSN 2053-1591
Wydawca: IOP
DOI: 10.1088/2053-1591/aae0d5

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

Autorzy: G. Ghibaudo, G. Pananakakis
Opublikowane w: Composants nanoélectroniques, Numer 2/1, 2019, ISSN 2516-3914
Wydawca: ISTE
DOI: 10.21494/iste.op.2019.0347

Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes

Autorzy: Muhammed Kayaharman, Maxime Legallais, Celine Ternon, Sangtak Park, Bassem Salem, Mehrdad Irannejad, Eihab Abdel-Rahman, Mustafa Yavuz
Opublikowane w: Proceedings, Numer 2/3, 2018, Strona(/y) 124, ISSN 2504-3900
Wydawca: MDPI
DOI: 10.3390/ecsa-4-04925

Optimizing Paste Formulation for Improving the Performances of CMOS-Based MOx Chemiresistors Prepared by Ink-Jet Printing

Autorzy: Claudio Zuliani, Lisa Jerg, Alison Hart, Wolfram Simmendinger, Malick Camara, Zeeshan Ali
Opublikowane w: Proceedings, Numer 2/13, 2018, Strona(/y) 774, ISSN 2504-3900
Wydawca: MDPI
DOI: 10.3390/proceedings2130774

An innovative large scale integration of silicon nanowire-based field effect transistors

Autorzy: M. Legallais, T.T.T. Nguyen, M. Mouis, B. Salem, E. Robin, P. Chenevier, C. Ternon
Opublikowane w: Solid-State Electronics, Numer 143, 2018, Strona(/y) 97-102, ISSN 0038-1101
Wydawca: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.11.008

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

Autorzy: T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo
Opublikowane w: Solid-State Electronics, Numer 143, 2018, Strona(/y) 83-89, ISSN 0038-1101
Wydawca: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.11.013

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Autorzy: Thomas Demes, Céline Ternon, Fanny Morisot, David Riassetto, Maxime Legallais, Hervé Roussel, Michel Langlet
Opublikowane w: Applied Surface Science, Numer 410, 2017, Strona(/y) 423-431, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2017.03.086

Material Engineering of Percolating Silicon Nanowire Networks for Reliable and Efficient Electronic Devices

Autorzy: Maxime Legallais, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Mireille Mouis, Bassem Salem and Céline Ternon
Opublikowane w: 2016
Wydawca: IOP

DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane

Autorzy: Demes-Causse, T and Morisot, F and Legallais, M and Calais, A and Pernot, E and Pignot-Paintrand, I and Ternon, C and Stambouli, V.
Opublikowane w: Materials Today, Proc, 2016
Wydawca: Elsevier

Fabrication et caractérisation de transistors à base de nanonet de silicium pour la détection électrique de l’ADN

Autorzy: Duc-Trung NGUYEN
Opublikowane w: 2018
Wydawca: à renseigner

Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Autorzy: Morisot F., Nguyen V. H., Montemont C., Maindron T., Muñoz-Rojas D., Mouis M., Langlet M., Ternon C.
Opublikowane w: Nanotechnology, 2016
Wydawca: IOP

Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets.

Autorzy: Thi Thu Thuy Nguyen, Thibauld Cazimajou, Maxime Legallais, Tabassom Arjmand, Viet Huong Nguyen, Mireille Mouis, Bassem Salem, Eric Robin, and Céline Ternon
Opublikowane w: Nano Futures, 2016
Wydawca: IOP

ZnO based Nanowire Network for Gas Sensing Applications

Autorzy: Fanny MORISOT, Claudio ZULIANI, Joaquim LUQUE1, Zeeshan ALI, , Mireille MOUIS, Viet Huong NGUYEN, David MUNOZ-ROJAS, Oumayma LOURHZAL, Michael TEXIER, Thomas W. CORNELIUS, Celine TERNON
Opublikowane w: Material Research Express, 2016
Wydawca: IOP

Master thesis dissertation: Fonctionnalisation de nanonets de ZnO, pour la détection électrique d’ADN sans marquage, validée par détection de fluorescence

Autorzy: F. Morisot
Opublikowane w: 2016
Wydawca: Université Bourgogne-Franche Comté

Engineering level dissertation: Nanonets de ZnO pour la détection électrique d’acétone

Autorzy: F. Morisot
Opublikowane w: 2016
Wydawca: ESIREM Dijon

Conception, étude et modélisation d’une nouvelle génération de transistors à nanofils de silicium pour applications biocapteurs

Autorzy: Maxime LEGALLAIS
Opublikowane w: Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2017, 2018
Wydawca: à renseigner

Croissance, assemblage et intégration collective de nanofils deZnO : Application à la biodétection

Autorzy: T. Demes
Opublikowane w: 2017
Wydawca: Communauté Université Grenoble Alpes

Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

Autorzy: T. Cazimajou, M. Mouis, G. Ghibaudo
Opublikowane w: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, Strona(/y) 1-3, ISBN 978-1-5386-4811-7
Wydawca: IEEE
DOI: 10.1109/ulis.2018.8354760

Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors

Autorzy: T Cazimajou, TTT Nguyen, M Legallais, M Mouis, CTernon, G Ghibaudo
Opublikowane w: Proceedings of EUROSOI-ULIS, 2019, 2019
Wydawca: IEEE

Low frequency noise characterization of Si Nanonet Field Effect Transistors

Autorzy: T Cazimajou, C Theodorou, M Mouis, TTT Nguyen, M Legallais, C Ternon and G Ghibaudo
Opublikowane w: Proceedings of ICNF 2019 (Neufchatel, Switzerland), 2019
Wydawca: IEEE

Toward the integration of Si nanonets into FETs for biosensing applications

Autorzy: M. Legallais, T. T. T. Nguyen, M. Mouis, B. Salem, C. Ternon
Opublikowane w: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Strona(/y) 231-234, ISBN 978-1-5090-5313-1
Wydawca: IEEE
DOI: 10.1109/ULIS.2017.7962570

Electrical characterization of percolating silicon nanonet FETs for sensing applications

Autorzy: T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo
Opublikowane w: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Strona(/y) 23-26, ISBN 978-1-5090-5313-1
Wydawca: IEEE
DOI: 10.1109/ULIS.2017.7962591

Wyszukiwanie danych OpenAIRE...

Rezultaty

Publikacje

Udostępnij tę stronę

Pobierz