Nanonets2Sense

Risultati finali

Report on dissemination activities during first reporting period

It will present all dissemination actions performed during the first period for the different targets.

Report on dissemination activities during second reporting period

It will present all dissemination actions performed during the second period for the different targets.

The project website will be an important tool for scientific project management, internal communication and project communication. It will include: • A Public area with dedicated parts for each target (Public, Scientifics, Policy Makers, …) • A Consortium area, where all relevant project documentation (such as scientific results, records of samples and masks, official documents, reports, drafts of publications, minutes of meetings) will be available. European Commission and reviewers will have access to specified pages of the Consortium area (such as Publications and Deliverables)

Pubblicazioni

Comprehensive study of hydrothermally grown ZnO nanowires

Autori: Thomas Demes, Céline Ternon, David Riassetto, Valérie Stambouli, Michel Langlet
Pubblicato in: Journal of Materials Science, Numero 51/23, 2016, Pagina/e 10652-10661, ISSN 0022-2461
Editore: Kluwer Academic Publishers
DOI: 10.1007/s10853-016-0287-8

Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

Autori: Ganesh Jayakumar, Maxime Legallais, Per-Erik Hellström, Mireille Mouis, Isabelle Pignot-Paintrand, Valérie Stambouli, Céline Ternon, Mikael Östling
Pubblicato in: Nanotechnology, Numero 30/18, 2019, Pagina/e 184002, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aaffa5

Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

Autori: G Jayakumar, M Östling
Pubblicato in: Nanotechnology, Numero 30/22, 2019, Pagina/e 225502, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab0469

Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors

Autori: G. Jayakumar, P.-E. Hellström, M. Östling
Pubblicato in: Microelectronic Engineering, Numero 212, 2019, Pagina/e 13-20, ISSN 0167-9317
Editore: Elsevier BV
DOI: 10.1016/j.mee.2019.03.006

Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

Autori: Ganesh Jayakumar, Per-Erik Hellström, Mikael Östling
Pubblicato in: Micromachines, Numero 9/11, 2018, Pagina/e 544, ISSN 2072-666X
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi9110544

First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

Autori: Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Valérie Stambouli, Mireille Mouis, Bassem Salem, Céline Ternon
Pubblicato in: Materials Research Express, Numero 6/1, 2019, Pagina/e 016301, ISSN 2053-1591
Editore: IOP
DOI: 10.1088/2053-1591/aae0d5

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

Autori: G. Ghibaudo, G. Pananakakis
Pubblicato in: Composants nanoélectroniques, Numero 2/1, 2019, ISSN 2516-3914
Editore: ISTE
DOI: 10.21494/iste.op.2019.0347

Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes

Autori: Muhammed Kayaharman, Maxime Legallais, Celine Ternon, Sangtak Park, Bassem Salem, Mehrdad Irannejad, Eihab Abdel-Rahman, Mustafa Yavuz
Pubblicato in: Proceedings, Numero 2/3, 2018, Pagina/e 124, ISSN 2504-3900
Editore: MDPI
DOI: 10.3390/ecsa-4-04925

Optimizing Paste Formulation for Improving the Performances of CMOS-Based MOx Chemiresistors Prepared by Ink-Jet Printing

Autori: Claudio Zuliani, Lisa Jerg, Alison Hart, Wolfram Simmendinger, Malick Camara, Zeeshan Ali
Pubblicato in: Proceedings, Numero 2/13, 2018, Pagina/e 774, ISSN 2504-3900
Editore: MDPI
DOI: 10.3390/proceedings2130774

An innovative large scale integration of silicon nanowire-based field effect transistors

Autori: M. Legallais, T.T.T. Nguyen, M. Mouis, B. Salem, E. Robin, P. Chenevier, C. Ternon
Pubblicato in: Solid-State Electronics, Numero 143, 2018, Pagina/e 97-102, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.11.008

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

Autori: T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo
Pubblicato in: Solid-State Electronics, Numero 143, 2018, Pagina/e 83-89, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2017.11.013

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Autori: Thomas Demes, Céline Ternon, Fanny Morisot, David Riassetto, Maxime Legallais, Hervé Roussel, Michel Langlet
Pubblicato in: Applied Surface Science, Numero 410, 2017, Pagina/e 423-431, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2017.03.086

Material Engineering of Percolating Silicon Nanowire Networks for Reliable and Efficient Electronic Devices

Autori: Maxime Legallais, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Mireille Mouis, Bassem Salem and Céline Ternon
Pubblicato in: 2016
Editore: IOP

DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane

Autori: Demes-Causse, T and Morisot, F and Legallais, M and Calais, A and Pernot, E and Pignot-Paintrand, I and Ternon, C and Stambouli, V.
Pubblicato in: Materials Today, Proc, 2016
Editore: Elsevier

Fabrication et caractérisation de transistors à base de nanonet de silicium pour la détection électrique de l’ADN

Autori: Duc-Trung NGUYEN
Pubblicato in: 2018
Editore: à renseigner

Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

Autori: Morisot F., Nguyen V. H., Montemont C., Maindron T., Muñoz-Rojas D., Mouis M., Langlet M., Ternon C.
Pubblicato in: Nanotechnology, 2016
Editore: IOP

Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets.

Autori: Thi Thu Thuy Nguyen, Thibauld Cazimajou, Maxime Legallais, Tabassom Arjmand, Viet Huong Nguyen, Mireille Mouis, Bassem Salem, Eric Robin, and Céline Ternon
Pubblicato in: Nano Futures, 2016
Editore: IOP

ZnO based Nanowire Network for Gas Sensing Applications

Autori: Fanny MORISOT, Claudio ZULIANI, Joaquim LUQUE1, Zeeshan ALI, , Mireille MOUIS, Viet Huong NGUYEN, David MUNOZ-ROJAS, Oumayma LOURHZAL, Michael TEXIER, Thomas W. CORNELIUS, Celine TERNON
Pubblicato in: Material Research Express, 2016
Editore: IOP

Master thesis dissertation: Fonctionnalisation de nanonets de ZnO, pour la détection électrique d’ADN sans marquage, validée par détection de fluorescence

Autori: F. Morisot
Pubblicato in: 2016
Editore: Université Bourgogne-Franche Comté

Engineering level dissertation: Nanonets de ZnO pour la détection électrique d’acétone

Autori: F. Morisot
Pubblicato in: 2016
Editore: ESIREM Dijon

Conception, étude et modélisation d’une nouvelle génération de transistors à nanofils de silicium pour applications biocapteurs

Autori: Maxime LEGALLAIS
Pubblicato in: Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2017, 2018
Editore: à renseigner

Croissance, assemblage et intégration collective de nanofils deZnO : Application à la biodétection

Autori: T. Demes
Pubblicato in: 2017
Editore: Communauté Université Grenoble Alpes

Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

Autori: T. Cazimajou, M. Mouis, G. Ghibaudo
Pubblicato in: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, Pagina/e 1-3, ISBN 978-1-5386-4811-7
Editore: IEEE
DOI: 10.1109/ulis.2018.8354760

Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors

Autori: T Cazimajou, TTT Nguyen, M Legallais, M Mouis, CTernon, G Ghibaudo
Pubblicato in: Proceedings of EUROSOI-ULIS, 2019, 2019
Editore: IEEE

Low frequency noise characterization of Si Nanonet Field Effect Transistors

Autori: T Cazimajou, C Theodorou, M Mouis, TTT Nguyen, M Legallais, C Ternon and G Ghibaudo
Pubblicato in: Proceedings of ICNF 2019 (Neufchatel, Switzerland), 2019
Editore: IEEE

Toward the integration of Si nanonets into FETs for biosensing applications

Autori: M. Legallais, T. T. T. Nguyen, M. Mouis, B. Salem, C. Ternon
Pubblicato in: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Pagina/e 231-234, ISBN 978-1-5090-5313-1
Editore: IEEE
DOI: 10.1109/ULIS.2017.7962570

Electrical characterization of percolating silicon nanonet FETs for sensing applications

Autori: T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo
Pubblicato in: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, Pagina/e 23-26, ISBN 978-1-5090-5313-1
Editore: IEEE
DOI: 10.1109/ULIS.2017.7962591

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