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Innovative Reliable Nitride based Power Devices and Applications


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Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Author(s): I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso
Published in: IEEE Transactions on Electron Devices, Issue 64/9, 2017, Page(s) 3734-3739, ISSN 0018-9383
DOI: 10.1109/TED.2017.2728785

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

Author(s): Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Published in: Materials Science in Semiconductor Processing, Issue 78, 2018, Page(s) 118-126, ISSN 1369-8001
DOI: 10.1016/j.mssp.2017.10.009

Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics

Author(s): Akira Kusaba, Guanchen Li, Michael von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto
Published in: Materials, Issue 10/8, 2017, Page(s) 948, ISSN 1996-1944
DOI: 10.3390/ma10080948

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

Author(s): Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
Published in: Applied Physics Letters, Issue 111/14, 2017, Page(s) 141602, ISSN 0003-6951
DOI: 10.1063/1.4991608

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Author(s): Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub
Published in: Applied Physics Express, Issue 11/3, 2018, Page(s) 034102, ISSN 1882-0778
DOI: 10.7567/apex.11.034102

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Author(s): Arno Stockman, Michael Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
Published in: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Page(s) 130-133
DOI: 10.1109/ESSDERC.2017.8066609

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

Author(s): M. Meneghini, A. Tajalli, P. Moens, A. Banerjee, A. Stockman, M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, G. Meneghesso
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 33.5.1-33.5.4
DOI: 10.1109/IEDM.2017.8268492

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Author(s): A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot
Published in: 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, Page(s) 4B.5-1-4B.5-4
DOI: 10.1109/IRPS.2018.8353582