Innovative Reliable Nitride based Power Devices and Applications

Project Information

InRel-NPower

Grant agreement ID: 720527

DOI

10.3030/720527

Project closed

EC signature date 9 November 2016

Start date 1 January 2017

End date 30 November 2020

Funded under

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials

Total cost

€ 7 691 466,25

EU contribution

€ 7 190 000,00

Coordinated by

UNIVERSITA DEGLI STUDI DI PADOVA
Italy

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Websites, patent fillings, videos etc. (1)

Web site

The website will be implemented. Project objectives, partners description and main activities related with the project will be included.

Publications

Peer reviewed articles (21)

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

Author(s): Sven Besendörfer, Elke Meissner, Farid Medjdoub, Joff Derluyn, Jochen Friedrich, Tobias Erlbacher
Published in: Scientific Reports, Issue 10/1, 2020, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-020-73977-2

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Author(s): A. Tajalli, E. Canato, A. Nardo, M. Meneghini, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso
Published in: Microelectronics Reliability, Issue 88-90, 2018, Page(s) 572-576, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2018.06.037

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Author(s): S. Besendörfer, E. Meissner, A. Lesnik, J. Friedrich, A. Dadgar, T. Erlbacher
Published in: Journal of Applied Physics, Issue 125/9, 2019, Page(s) 095704, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5065442

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Author(s): Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Published in: Micromachines, Issue 11/1, 2020, Page(s) 101, ISSN 2072-666X
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi11010101

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Author(s): M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, J. Derluyn, I. Abid, F. Medjdoub, G. Meneghesso, E. Zanoni
Published in: Microelectronics Reliability, Issue 100-101, 2019, Page(s) 113461, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2019.113461

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

Author(s): A. Stockman, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot
Published in: IEEE Transactions on Electron Devices, Issue 66/1, 2019, Page(s) 372-377, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2881325

Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures

Author(s): F. Geenen, A. Constant, E. Solano, D. Deduytsche, C. Mocuta, P. Coppens, C. Detavernier
Published in: Journal of Applied Physics, Issue 127/21, 2020, Page(s) 215701, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/5.0006003

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Author(s): Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Published in: Materials, Issue 13/19, 2020, Page(s) 4271, ISSN 1996-1944
Publisher: MDPI Open Access Publishing
DOI: 10.3390/ma13194271

CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films

Author(s): Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael von Spakovsky, Yoshihiro Kangawa
Published in: Materials, Issue 12/6, 2019, Page(s) 972, ISSN 1996-1944
Publisher: MDPI Open Access Publishing
DOI: 10.3390/ma12060972

Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE

Author(s): Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
Published in: Applied Physics Express, Issue 13/5, 2020, Page(s) 055507, ISSN 1882-0778
Publisher: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ab8723

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Author(s): Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Farid Medjdoub
Published in: physica status solidi (a), Issue 217/7, 2020, Page(s) 1900687, ISSN 1862-6300
Publisher: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201900687

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Author(s): I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso
Published in: IEEE Transactions on Electron Devices, Issue 64/9, 2017, Page(s) 3734-3739, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2728785

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

Author(s): Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Published in: Materials Science in Semiconductor Processing, Issue 78, 2018, Page(s) 118-126, ISSN 1369-8001
Publisher: Pergamon Press
DOI: 10.1016/j.mssp.2017.10.009

Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics

Author(s): Akira Kusaba, Guanchen Li, Michael von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto
Published in: Materials, Issue 10/8, 2017, Page(s) 948, ISSN 1996-1944
Publisher: MDPI Open Access Publishing
DOI: 10.3390/ma10080948

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

Author(s): Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
Published in: Applied Physics Letters, Issue 111/14, 2017, Page(s) 141602, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.4991608

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Author(s): Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub
Published in: Applied Physics Express, Issue 11/3, 2018, Page(s) 034102, ISSN 1882-0778
Publisher: Japan Soc of Applied Physics
DOI: 10.7567/apex.11.034102

Vertical breakdown of GaN on Si due to V-pits

Author(s): S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. A. Freitas, J. Derluyn, F. Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher
Published in: Journal of Applied Physics, Issue 127/1, 2020, Page(s) 015701, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5129248

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Author(s): S. Besendörfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A. Vescan, J. Friedrich, T. Erlbacher
Published in: AIP Advances, Issue 10/4, 2020, Page(s) 045028, ISSN 2158-3226
Publisher: American Institute of Physics Inc.
DOI: 10.1063/1.5141905

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

Author(s): E. Canato, M. Meneghini, C. De Santi, F. Masin, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso
Published in: Microelectronics Reliability, Issue 114, 2020, Page(s) 113841, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2020.113841

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

Author(s): Georges Pavlidis, Samuel H. Kim, Idriss Abid, Malek Zegaoui, Farid Medjdoub, Samuel Graham
Published in: IEEE Electron Device Letters, Issue 40/7, 2019, Page(s) 1060-1063, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2915984

ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

Author(s): E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, A. Stockman, A. Banerjee, P. Moens, E. Zanoni, G. Meneghesso
Published in: Microelectronics Reliability, Issue 100-101, 2019, Page(s) 113334, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2019.06.026

Conference proceedings (6)

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Author(s): M. Germain;Farid Medjdoub;H. Miyake;Elke Meissner;J. Derluyn;Riad Kabouche;Idriss Abid;Sven Besendörfer;S. Degroote
Published in: International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States, 2019
Publisher: CS MANTECH

GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

Author(s): Borga, M.; MENEGHINI, M.; Benazzi, D; Püsche, R; Derluyn, J; Abid, I; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Published in: 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Issue 2, 2019
Publisher: CNRS - FR

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Author(s): Arno Stockman, Michael Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
Published in: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Page(s) 130-133, ISBN 978-1-5090-5978-2
Publisher: IEEE
DOI: 10.1109/ESSDERC.2017.8066609

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

Author(s): M. Meneghini, A. Tajalli, P. Moens, A. Banerjee, A. Stockman, M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, G. Meneghesso
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 33.5.1-33.5.4, ISBN 978-1-5386-3559-9
Publisher: IEEE
DOI: 10.1109/IEDM.2017.8268492

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Author(s): A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot
Published in: 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, Page(s) 4B.5-1-4B.5-4, ISBN 978-1-5386-5479-8
Publisher: IEEE
DOI: 10.1109/IRPS.2018.8353582

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Author(s): I. Abid, R. Kabouche, F. Medjdoub, S. Besendorfer, E. Meissner, J. Derluyn, S. Degroote, M. Germain, H. Miyake
Published in: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, Page(s) 310-312, ISBN 978-1-7281-4836-6
Publisher: IEEE
DOI: 10.1109/ispsd46842.2020.9170170

Intellectual Property Rights

Patent (7)

ELECTRONIC DEVICE INCLUDING A HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A GATE ELECTRODE

Application/Publication number: 20 1816052041
Date: 2018-08-01
Applicant(s): BELGAN BV

Electronic device including a transistor including III-V materials and a process of forming the same

Application/Publication number: 20 1815916428
Date: 2018-03-09
Applicant(s): BELGAN BV

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING AN ACCESS REGION

Application/Publication number: 20 1816025085
Date: 2018-07-02
Applicant(s): BELGAN BV

Electronic Device Including a Transistor with a Non-uniform 2DEG

Application/Publication number: 20 1816148127
Date: 2018-10-01
Applicant(s): BELGAN BV

ELECTRONIC DEVICE INCLUDING AN ACCESS REGION AND A PROCESS OF FORMING THE SAME

Application/Publication number: 20 1815997122
Date: 2018-06-04
Applicant(s): BELGAN BV

III-V semiconductor device and method therefor

Application/Publication number: 20 1715422764
Date: 2017-02-02
Applicant(s): BELGAN BV

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE

Application/Publication number: 20 1715662622
Date: 2017-07-28
Applicant(s): BELGAN BV