Innovative Reliable Nitride based Power Devices and Applications

Livrables

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Publications

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

Auteurs: Sven Besendörfer, Elke Meissner, Farid Medjdoub, Joff Derluyn, Jochen Friedrich, Tobias Erlbacher
Publié dans: Scientific Reports, Numéro 10/1, 2020, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/s41598-020-73977-2

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Auteurs: A. Tajalli, E. Canato, A. Nardo, M. Meneghini, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso
Publié dans: Microelectronics Reliability, Numéro 88-90, 2018, Page(s) 572-576, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2018.06.037

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Auteurs: S. Besendörfer, E. Meissner, A. Lesnik, J. Friedrich, A. Dadgar, T. Erlbacher
Publié dans: Journal of Applied Physics, Numéro 125/9, 2019, Page(s) 095704, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5065442

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Auteurs: Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Publié dans: Micromachines, Numéro 11/1, 2020, Page(s) 101, ISSN 2072-666X
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi11010101

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Auteurs: M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, J. Derluyn, I. Abid, F. Medjdoub, G. Meneghesso, E. Zanoni
Publié dans: Microelectronics Reliability, Numéro 100-101, 2019, Page(s) 113461, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2019.113461

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

Auteurs: A. Stockman, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot
Publié dans: IEEE Transactions on Electron Devices, Numéro 66/1, 2019, Page(s) 372-377, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2881325

Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures

Auteurs: F. Geenen, A. Constant, E. Solano, D. Deduytsche, C. Mocuta, P. Coppens, C. Detavernier
Publié dans: Journal of Applied Physics, Numéro 127/21, 2020, Page(s) 215701, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/5.0006003

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Auteurs: Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Publié dans: Materials, Numéro 13/19, 2020, Page(s) 4271, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma13194271

CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films

Auteurs: Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael von Spakovsky, Yoshihiro Kangawa
Publié dans: Materials, Numéro 12/6, 2019, Page(s) 972, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12060972

Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE

Auteurs: Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
Publié dans: Applied Physics Express, Numéro 13/5, 2020, Page(s) 055507, ISSN 1882-0778
Éditeur: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ab8723

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Auteurs: Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Farid Medjdoub
Publié dans: physica status solidi (a), Numéro 217/7, 2020, Page(s) 1900687, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201900687

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Auteurs: I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso
Publié dans: IEEE Transactions on Electron Devices, Numéro 64/9, 2017, Page(s) 3734-3739, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2728785

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

Auteurs: Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Publié dans: Materials Science in Semiconductor Processing, Numéro 78, 2018, Page(s) 118-126, ISSN 1369-8001
Éditeur: Pergamon Press
DOI: 10.1016/j.mssp.2017.10.009

Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics

Auteurs: Akira Kusaba, Guanchen Li, Michael von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto
Publié dans: Materials, Numéro 10/8, 2017, Page(s) 948, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma10080948

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

Auteurs: Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
Publié dans: Applied Physics Letters, Numéro 111/14, 2017, Page(s) 141602, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/1.4991608

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Auteurs: Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub
Publié dans: Applied Physics Express, Numéro 11/3, 2018, Page(s) 034102, ISSN 1882-0778
Éditeur: Japan Soc of Applied Physics
DOI: 10.7567/apex.11.034102

Vertical breakdown of GaN on Si due to V-pits

Auteurs: S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. A. Freitas, J. Derluyn, F. Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher
Publié dans: Journal of Applied Physics, Numéro 127/1, 2020, Page(s) 015701, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5129248

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Auteurs: S. Besendörfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A. Vescan, J. Friedrich, T. Erlbacher
Publié dans: AIP Advances, Numéro 10/4, 2020, Page(s) 045028, ISSN 2158-3226
Éditeur: American Institute of Physics Inc.
DOI: 10.1063/1.5141905

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

Auteurs: E. Canato, M. Meneghini, C. De Santi, F. Masin, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso
Publié dans: Microelectronics Reliability, Numéro 114, 2020, Page(s) 113841, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2020.113841

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

Auteurs: Georges Pavlidis, Samuel H. Kim, Idriss Abid, Malek Zegaoui, Farid Medjdoub, Samuel Graham
Publié dans: IEEE Electron Device Letters, Numéro 40/7, 2019, Page(s) 1060-1063, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2915984

ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

Auteurs: E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, A. Stockman, A. Banerjee, P. Moens, E. Zanoni, G. Meneghesso
Publié dans: Microelectronics Reliability, Numéro 100-101, 2019, Page(s) 113334, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2019.06.026

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Auteurs: M. Germain;Farid Medjdoub;H. Miyake;Elke Meissner;J. Derluyn;Riad Kabouche;Idriss Abid;Sven BesendÃ¶rfer;S. Degroote
Publié dans: International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States, 2019
Éditeur: CS MANTECH

GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

Auteurs: Borga, M.; MENEGHINI, M.; Benazzi, D; Püsche, R; Derluyn, J; Abid, I; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Publié dans: 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Numéro 2, 2019
Éditeur: CNRS - FR

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Auteurs: Arno Stockman, Michael Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
Publié dans: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Page(s) 130-133, ISBN 978-1-5090-5978-2
Éditeur: IEEE
DOI: 10.1109/ESSDERC.2017.8066609

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

Auteurs: M. Meneghini, A. Tajalli, P. Moens, A. Banerjee, A. Stockman, M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, G. Meneghesso
Publié dans: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 33.5.1-33.5.4, ISBN 978-1-5386-3559-9
Éditeur: IEEE
DOI: 10.1109/IEDM.2017.8268492

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Auteurs: A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot
Publié dans: 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, Page(s) 4B.5-1-4B.5-4, ISBN 978-1-5386-5479-8
Éditeur: IEEE
DOI: 10.1109/IRPS.2018.8353582

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Auteurs: I. Abid, R. Kabouche, F. Medjdoub, S. Besendorfer, E. Meissner, J. Derluyn, S. Degroote, M. Germain, H. Miyake
Publié dans: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, Page(s) 310-312, ISBN 978-1-7281-4836-6
Éditeur: IEEE
DOI: 10.1109/ispsd46842.2020.9170170

Droits de propriété intellectuelle

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING AN ACCESS REGION

Numéro de demande/publication: 20 1816025085
Date: 2018-07-02
Demandeur(s): BELGAN BV

III-V semiconductor device and method therefor

Numéro de demande/publication: 20 1715422764
Date: 2017-02-02
Demandeur(s): BELGAN BV

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE

Numéro de demande/publication: 20 1715662622
Date: 2017-07-28
Demandeur(s): BELGAN BV

Electronic device including a transistor including III-V materials and a process of forming the same

Numéro de demande/publication: 20 1815916428
Date: 2018-03-09
Demandeur(s): BELGAN BV

ELECTRONIC DEVICE INCLUDING A HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A GATE ELECTRODE

Numéro de demande/publication: 20 1816052041
Date: 2018-08-01
Demandeur(s): BELGAN BV

Electronic Device Including a Transistor with a Non-uniform 2DEG

Numéro de demande/publication: 20 1816148127
Date: 2018-10-01
Demandeur(s): BELGAN BV

ELECTRONIC DEVICE INCLUDING AN ACCESS REGION AND A PROCESS OF FORMING THE SAME

Numéro de demande/publication: 20 1815997122
Date: 2018-06-04
Demandeur(s): BELGAN BV

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Publications

Droits de propriété intellectuelle

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