Innovative Reliable Nitride based Power Devices and Applications

Rezultaty

The website will be implemented. Project objectives, partners description and main activities related with the project will be included.

Publikacje

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

Autorzy: Sven Besendörfer, Elke Meissner, Farid Medjdoub, Joff Derluyn, Jochen Friedrich, Tobias Erlbacher
Opublikowane w: Scientific Reports, Numer 10/1, 2020, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/s41598-020-73977-2

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Autorzy: A. Tajalli, E. Canato, A. Nardo, M. Meneghini, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso
Opublikowane w: Microelectronics Reliability, Numer 88-90, 2018, Strona(/y) 572-576, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2018.06.037

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Autorzy: S. Besendörfer, E. Meissner, A. Lesnik, J. Friedrich, A. Dadgar, T. Erlbacher
Opublikowane w: Journal of Applied Physics, Numer 125/9, 2019, Strona(/y) 095704, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.5065442

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Autorzy: Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Opublikowane w: Micromachines, Numer 11/1, 2020, Strona(/y) 101, ISSN 2072-666X
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi11010101

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Autorzy: M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, J. Derluyn, I. Abid, F. Medjdoub, G. Meneghesso, E. Zanoni
Opublikowane w: Microelectronics Reliability, Numer 100-101, 2019, Strona(/y) 113461, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2019.113461

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

Autorzy: A. Stockman, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot
Opublikowane w: IEEE Transactions on Electron Devices, Numer 66/1, 2019, Strona(/y) 372-377, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2881325

Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures

Autorzy: F. Geenen, A. Constant, E. Solano, D. Deduytsche, C. Mocuta, P. Coppens, C. Detavernier
Opublikowane w: Journal of Applied Physics, Numer 127/21, 2020, Strona(/y) 215701, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/5.0006003

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Autorzy: Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Opublikowane w: Materials, Numer 13/19, 2020, Strona(/y) 4271, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma13194271

CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films

Autorzy: Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael von Spakovsky, Yoshihiro Kangawa
Opublikowane w: Materials, Numer 12/6, 2019, Strona(/y) 972, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma12060972

Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE

Autorzy: Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
Opublikowane w: Applied Physics Express, Numer 13/5, 2020, Strona(/y) 055507, ISSN 1882-0778
Wydawca: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ab8723

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Autorzy: Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Farid Medjdoub
Opublikowane w: physica status solidi (a), Numer 217/7, 2020, Strona(/y) 1900687, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201900687

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Autorzy: I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso
Opublikowane w: IEEE Transactions on Electron Devices, Numer 64/9, 2017, Strona(/y) 3734-3739, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2728785

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

Autorzy: Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Opublikowane w: Materials Science in Semiconductor Processing, Numer 78, 2018, Strona(/y) 118-126, ISSN 1369-8001
Wydawca: Pergamon Press
DOI: 10.1016/j.mssp.2017.10.009

Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics

Autorzy: Akira Kusaba, Guanchen Li, Michael von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto
Opublikowane w: Materials, Numer 10/8, 2017, Strona(/y) 948, ISSN 1996-1944
Wydawca: MDPI Open Access Publishing
DOI: 10.3390/ma10080948

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

Autorzy: Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
Opublikowane w: Applied Physics Letters, Numer 111/14, 2017, Strona(/y) 141602, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4991608

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Autorzy: Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub
Opublikowane w: Applied Physics Express, Numer 11/3, 2018, Strona(/y) 034102, ISSN 1882-0778
Wydawca: Japan Soc of Applied Physics
DOI: 10.7567/apex.11.034102

Vertical breakdown of GaN on Si due to V-pits

Autorzy: S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. A. Freitas, J. Derluyn, F. Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher
Opublikowane w: Journal of Applied Physics, Numer 127/1, 2020, Strona(/y) 015701, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.5129248

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Autorzy: S. Besendörfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A. Vescan, J. Friedrich, T. Erlbacher
Opublikowane w: AIP Advances, Numer 10/4, 2020, Strona(/y) 045028, ISSN 2158-3226
Wydawca: American Institute of Physics Inc.
DOI: 10.1063/1.5141905

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

Autorzy: E. Canato, M. Meneghini, C. De Santi, F. Masin, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso
Opublikowane w: Microelectronics Reliability, Numer 114, 2020, Strona(/y) 113841, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2020.113841

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

Autorzy: Georges Pavlidis, Samuel H. Kim, Idriss Abid, Malek Zegaoui, Farid Medjdoub, Samuel Graham
Opublikowane w: IEEE Electron Device Letters, Numer 40/7, 2019, Strona(/y) 1060-1063, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2915984

ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

Autorzy: E. Canato, M. Meneghini, A. Nardo, F. Masin, A. Barbato, M. Barbato, A. Stockman, A. Banerjee, P. Moens, E. Zanoni, G. Meneghesso
Opublikowane w: Microelectronics Reliability, Numer 100-101, 2019, Strona(/y) 113334, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2019.06.026

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Autorzy: M. Germain;Farid Medjdoub;H. Miyake;Elke Meissner;J. Derluyn;Riad Kabouche;Idriss Abid;Sven BesendÃ¶rfer;S. Degroote
Opublikowane w: International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States, 2019
Wydawca: CS MANTECH

GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

Autorzy: Borga, M.; MENEGHINI, M.; Benazzi, D; Püsche, R; Derluyn, J; Abid, I; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Opublikowane w: 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Numer 2, 2019
Wydawca: CNRS - FR

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Autorzy: Arno Stockman, Michael Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
Opublikowane w: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Strona(/y) 130-133, ISBN 978-1-5090-5978-2
Wydawca: IEEE
DOI: 10.1109/ESSDERC.2017.8066609

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

Autorzy: M. Meneghini, A. Tajalli, P. Moens, A. Banerjee, A. Stockman, M. Tack, S. Gerardin, M. Bagatin, A. Paccagnella, E. Zanoni, G. Meneghesso
Opublikowane w: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Strona(/y) 33.5.1-33.5.4, ISBN 978-1-5386-3559-9
Wydawca: IEEE
DOI: 10.1109/IEDM.2017.8268492

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Autorzy: A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot
Opublikowane w: 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, Strona(/y) 4B.5-1-4B.5-4, ISBN 978-1-5386-5479-8
Wydawca: IEEE
DOI: 10.1109/IRPS.2018.8353582

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Autorzy: I. Abid, R. Kabouche, F. Medjdoub, S. Besendorfer, E. Meissner, J. Derluyn, S. Degroote, M. Germain, H. Miyake
Opublikowane w: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, Strona(/y) 310-312, ISBN 978-1-7281-4836-6
Wydawca: IEEE
DOI: 10.1109/ispsd46842.2020.9170170

Prawa własności intelektualnej

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING AN ACCESS REGION

Numer wniosku/publikacji: 20 1816025085
Data: 2018-07-02
Wnioskodawca/wnioskodawcy: BELGAN BV

III-V semiconductor device and method therefor

Numer wniosku/publikacji: 20 1715422764
Data: 2017-02-02
Wnioskodawca/wnioskodawcy: BELGAN BV

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE

Numer wniosku/publikacji: 20 1715662622
Data: 2017-07-28
Wnioskodawca/wnioskodawcy: BELGAN BV

Electronic device including a transistor including III-V materials and a process of forming the same

Numer wniosku/publikacji: 20 1815916428
Data: 2018-03-09
Wnioskodawca/wnioskodawcy: BELGAN BV

ELECTRONIC DEVICE INCLUDING A HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A GATE ELECTRODE

Numer wniosku/publikacji: 20 1816052041
Data: 2018-08-01
Wnioskodawca/wnioskodawcy: BELGAN BV

Electronic Device Including a Transistor with a Non-uniform 2DEG

Numer wniosku/publikacji: 20 1816148127
Data: 2018-10-01
Wnioskodawca/wnioskodawcy: BELGAN BV

ELECTRONIC DEVICE INCLUDING AN ACCESS REGION AND A PROCESS OF FORMING THE SAME

Numer wniosku/publikacji: 20 1815997122
Data: 2018-06-04
Wnioskodawca/wnioskodawcy: BELGAN BV

Rezultaty

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Prawa własności intelektualnej

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