Large-Area Transparent Opto-Electronics using 2D Materials

Informazioni relative al progetto

LATO

ID dell’accordo di sovvenzione: 725258

DOI 10.3030/725258

Progetto concluso il 31 Dicembre 2019

Data della firma CE 28 Febbraio 2017

Data di avvio 1 Aprile 2017

Data di completamento 31 Marzo 2022

Finanziato da

• EXCELLENT SCIENCE - European Research Council (ERC)

Costo totale € 1 999 318,00

Contributo UE € 1 999 318,00

Coordinato da

THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF OXFORD
United Kingdom

Pubblicazioni

Peer reviewed articles (10)

Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS 2

Autori: Qu Chen, Huashan Li, Si Zhou, Wenshuo Xu, Jun Chen, Hidetaka Sawada, Christopher S. Allen, Angus I. Kirkland, Jeffrey C. Grossman, Jamie H. Warner
Pubblicato in: ACS Nano, Numero 12/8, 2018, Pagina/e 7721-7730, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b01610

Preferential Pt Nanocluster Seeding at Grain Boundary Dislocations in Polycrystalline Monolayer MoS 2

Autori: Shanshan Wang, Hidetaka Sawada, Xiaoyu Han, Si Zhou, Sha Li, Zheng Xiao Guo, Angus I. Kirkland, Jamie H. Warner
Pubblicato in: ACS Nano, Numero 12/6, 2018, Pagina/e 5626-5636, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b01418

Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga 2 S 3

Autori: Xiaochen Wang, Yuewen Sheng, Ren-Jie Chang, Ja Kyung Lee, Yingqiu Zhou, Sha Li, Tongxin Chen, Hefu Huang, Benjamin F. Porter, Harish Bhaskaran, Jamie H. Warner
Pubblicato in: ACS Omega, Numero 3/7, 2018, Pagina/e 7897-7903, ISSN 2470-1343
Editore: American Chemical Society
DOI: 10.1021/acsomega.8b00749

Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS 2 :hBN:MoS 2 Heterostructures for Exciton Energy Transfer

Autori: Wenshuo Xu, Daichi Kozawa, Yu Liu, Yuewen Sheng, Ke Wei, Volodymyr B. Koman, Shanshan Wang, Xiaochen Wang, Tian Jiang, Michael S. Strano, Jamie H. Warner
Pubblicato in: Small, Numero 14/13, 2018, Pagina/e 1703727, ISSN 1613-6810
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/smll.201703727

Atomic Structure and Dynamics of Self-Limiting Sub-Nanometer Pores in Monolayer WS 2

Autori: Gyeong Hee Ryu, Arthur France-Lanord, Yi Wen, Si Zhou, Jeffrey C. Grossman, Jamie H. Warner
Pubblicato in: ACS Nano, 2018, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b07051

High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene–MoS 2 Heterojunctions

Autori: Hefu Huang, Wenshuo Xu, Tongxin Chen, Ren-Jie Chang, Yuewen Sheng, Qianyang Zhang, Linlin Hou, Jamie H. Warner
Pubblicato in: ACS Applied Materials & Interfaces, Numero 10/43, 2018, Pagina/e 37258-37266, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.8b13507

Inhomogeneous Strain Release during Bending of WS 2 on Flexible Substrates

Autori: Martin E. P. Tweedie, Yuewen Sheng, Syed Ghazi Sarwat, Wenshuo Xu, Harish Bhaskaran, Jamie H. Warner
Pubblicato in: ACS Applied Materials & Interfaces, Numero 10/45, 2018, Pagina/e 39177-39186, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.8b12707

In Situ Atomic-Level Studies of Gd Atom Release and Migration on Graphene from a Metallofullerene Precursor

Autori: Sapna Sinha, Yuewen Sheng, Ian Griffiths, Neil P. Young, Si Zhou, Angus I. Kirkland, Kyriakos Porfyrakis, Jamie H. Warner
Pubblicato in: ACS Nano, Numero 12/10, 2018, Pagina/e 10439-10451, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b06057

Utilizing Interlayer Excitons in Bilayer WS 2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors

Autori: Yingqiu Zhou, Haijie Tan, Yuewen Sheng, Ye Fan, Wenshuo Xu, Jamie H. Warner
Pubblicato in: ACS Nano, Numero 12/5, 2018, Pagina/e 4669-4677, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b01263

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics

Autori: Ren-Jie Chang, Haijie Tan, Xiaochen Wang, Benjamin Porter, Tongxin Chen, Yuewen Sheng, Yingqiu Zhou, Hefu Huang, Harish Bhaskaran, Jamie H. Warner
Pubblicato in: ACS Applied Materials & Interfaces, Numero 10/15, 2017, Pagina/e 13002-13010, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.8b01038