Large-Area Transparent Opto-Electronics using 2D Materials

Publikacje

Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS 2

Autorzy: Qu Chen, Huashan Li, Si Zhou, Wenshuo Xu, Jun Chen, Hidetaka Sawada, Christopher S. Allen, Angus I. Kirkland, Jeffrey C. Grossman, Jamie H. Warner
Opublikowane w: ACS Nano, Numer 12/8, 2018, Strona(/y) 7721-7730, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.8b01610

Preferential Pt Nanocluster Seeding at Grain Boundary Dislocations in Polycrystalline Monolayer MoS 2

Autorzy: Shanshan Wang, Hidetaka Sawada, Xiaoyu Han, Si Zhou, Sha Li, Zheng Xiao Guo, Angus I. Kirkland, Jamie H. Warner
Opublikowane w: ACS Nano, Numer 12/6, 2018, Strona(/y) 5626-5636, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.8b01418

Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga 2 S 3

Autorzy: Xiaochen Wang, Yuewen Sheng, Ren-Jie Chang, Ja Kyung Lee, Yingqiu Zhou, Sha Li, Tongxin Chen, Hefu Huang, Benjamin F. Porter, Harish Bhaskaran, Jamie H. Warner
Opublikowane w: ACS Omega, Numer 3/7, 2018, Strona(/y) 7897-7903, ISSN 2470-1343
Wydawca: American Chemical Society
DOI: 10.1021/acsomega.8b00749

Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS 2 :hBN:MoS 2 Heterostructures for Exciton Energy Transfer

Autorzy: Wenshuo Xu, Daichi Kozawa, Yu Liu, Yuewen Sheng, Ke Wei, Volodymyr B. Koman, Shanshan Wang, Xiaochen Wang, Tian Jiang, Michael S. Strano, Jamie H. Warner
Opublikowane w: Small, Numer 14/13, 2018, Strona(/y) 1703727, ISSN 1613-6810
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/smll.201703727

Atomic Structure and Dynamics of Self-Limiting Sub-Nanometer Pores in Monolayer WS 2

Autorzy: Gyeong Hee Ryu, Arthur France-Lanord, Yi Wen, Si Zhou, Jeffrey C. Grossman, Jamie H. Warner
Opublikowane w: ACS Nano, 2018, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.8b07051

High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene–MoS 2 Heterojunctions

Autorzy: Hefu Huang, Wenshuo Xu, Tongxin Chen, Ren-Jie Chang, Yuewen Sheng, Qianyang Zhang, Linlin Hou, Jamie H. Warner
Opublikowane w: ACS Applied Materials & Interfaces, Numer 10/43, 2018, Strona(/y) 37258-37266, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.8b13507

Inhomogeneous Strain Release during Bending of WS 2 on Flexible Substrates

Autorzy: Martin E. P. Tweedie, Yuewen Sheng, Syed Ghazi Sarwat, Wenshuo Xu, Harish Bhaskaran, Jamie H. Warner
Opublikowane w: ACS Applied Materials & Interfaces, Numer 10/45, 2018, Strona(/y) 39177-39186, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.8b12707

In Situ Atomic-Level Studies of Gd Atom Release and Migration on Graphene from a Metallofullerene Precursor

Autorzy: Sapna Sinha, Yuewen Sheng, Ian Griffiths, Neil P. Young, Si Zhou, Angus I. Kirkland, Kyriakos Porfyrakis, Jamie H. Warner
Opublikowane w: ACS Nano, Numer 12/10, 2018, Strona(/y) 10439-10451, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.8b06057

Utilizing Interlayer Excitons in Bilayer WS 2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors

Autorzy: Yingqiu Zhou, Haijie Tan, Yuewen Sheng, Ye Fan, Wenshuo Xu, Jamie H. Warner
Opublikowane w: ACS Nano, Numer 12/5, 2018, Strona(/y) 4669-4677, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.8b01263

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics

Autorzy: Ren-Jie Chang, Haijie Tan, Xiaochen Wang, Benjamin Porter, Tongxin Chen, Yuewen Sheng, Yingqiu Zhou, Hefu Huang, Harish Bhaskaran, Jamie H. Warner
Opublikowane w: ACS Applied Materials & Interfaces, Numer 10/15, 2017, Strona(/y) 13002-13010, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.8b01038

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