Phase-Change Materials and Switches for Enabling Beyond-CMOS Energy Efficient Applications

Project Information

PHASE-CHANGE SWITCH

Grant agreement ID: 737109

DOI 10.3030/737109

Project closed

EC signature date 29 November 2016

Start date 1 January 2017

End date 30 November 2020

Funded under

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Total cost € 3 883 412,50

EU contribution € 3 883 412,00

Coordinated by

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland

Deliverables

Websites, patent fillings, videos etc. (3)

2nd International PHASE-CHANGE SWITCH Symposium
1st International PHASE-CHANGE SWITCH Symposium
Website, project press release and flyer

Documents, reports (9)

Report on band gaps of Alloyed (V,metal)O2 systems

Report on band gaps of Alloyed (V,metal)O2 systems and on bandgap control by strain

Report on fundamental calculations: VO2 and V2O3 systems and band gap of NbO2

Report on fundamental calculations and electronic structure modelling of VO2 and V2O3 systems and band gap of NbO2

Two-terminal steep-slope MIT switches

Design of two-terminal steep-slope MIT switches

Design and simulation of VO2 RF switches and circuit applications
Report on the optimization of the three deposition processes

Report on the optimization of deposition, doping and strain processes

Fabrication and evaluation of solid-state ionitronic non-volatile memory

Design and demonstration of a solid-state ionitronic non-volatile memory

Plan for the Dissemination and Exploitation of the Project's Results (PDEPR)
Design and fabrication of coupled relaxation oscillators from MHz to GHz

Design and fabrication of coupled relaxation oscillators based on phase-change switches

Three-terminal steep-slope MIT switches.

Design of three-terminal steep-slope MIT switches

Open Research Data Pilot (1)

Data management plan

A DMP (Data Management Plan) will be established in collaboration with the EPFL Library ([e-mail]).

Publications

Peer reviewed articles (22)

Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide

Author(s): Haichang Lu, Stewart Clark, Yuzheng Guo, John Robertson
Published in: Physical Chemistry Chemical Physics, Issue 22/24, 2020, Page(s) 13474-13478, ISSN 1463-9076
Publisher: Royal Society of Chemistry
DOI: 10.1039/d0cp01929a

Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys

Author(s): Haichang Lu, Yuzheng Guo, John Robertson
Published in: Physical Review Materials, Issue 3/9, 2019, ISSN 2475-9953
Publisher: American Physical Society
DOI: 10.1103/physrevmaterials.3.094603

3D Smith Chart Constant Quality Factor Semi-Circles Contours for Positive and Negative Resistance Circuits

Author(s): Victor Asavei, Andrei A. Muller, Esther Sanabria-Codesal, Alin Moldoveanu, Adrian M. Ionescu
Published in: IEEE Access, Issue 8, 2020, Page(s) 176012-176022, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3026917

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Author(s): Guandong Bai, Kham M. Niang, John Robertson
Published in: Journal of Vacuum Science & Technology A, Issue 38/5, 2020, Page(s) 052402, ISSN 0734-2101
Publisher: American Institute of Physics
DOI: 10.1116/6.0000353

Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors

Author(s): Zhaofu Zhang, Yuzheng Guo, Haichang Lu, Stewart J. Clark, John Robertson
Published in: Applied Physics Letters, Issue 116/13, 2020, Page(s) 131602, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5135376

Elevated transition temperature in Ge doped VO 2 thin films

Author(s): Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, Andreas Schüler
Published in: Journal of Applied Physics, Issue 122/4, 2017, Page(s) 045304, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.4995965

Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Author(s): Emanuele Andrea Casu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos, Adrian M. Ionescu
Published in: IEEE Journal of the Electron Devices Society, Issue 6, 2018, Page(s) 965-971, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2837869

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

Author(s): Emanuele Andrea Casu, Andrei A. Muller, Montserrat Fernandez-Bolanos, Alessandro Fumarola, Anna Krammer, Andreas Schuler, Adrian M. Ionescu
Published in: IEEE Access, Issue 6, 2018, Page(s) 12206-12212, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2018.2795463

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Author(s): Emanuele Andrea Casu, Andrei A. Muller, Matteo Cavalieri, Alessandro Fumarola, Adrian Mihai Ionescu, Montserrat Fernandez-Bolanos
Published in: IEEE Microwave and Wireless Components Letters, Issue 28/9, 2018, Page(s) 795-797, ISSN 1531-1309
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2018.2854961

Density Functional Theory Studies of the Metal–Insulator Transition in Vanadium Dioxide Alloys

Author(s): Haichang Lu, John Robertson
Published in: physica status solidi (b), Issue 256/12, 2019, Page(s) 1900210, ISSN 0370-1972
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201900210

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Author(s): Andrei A. Muller, Alin Moldoveanu, Victor Asavei, Riyaz A. Khadar, Esther Sanabria-Codesal, Anna Krammer, Montserrat Fernandez-Bolaños, Matteo Cavalieri, Junrui Zhang, Emanuele Casu, Andreas Schuler, Adrian M. Ionescu
Published in: Scientific Reports, Issue 9/1, 2019, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-019-54600-5

Band alignment calculation of dielectric films on VO2

Author(s): Zhaofu Zhang, Jiaqi Chen, Yuzheng Guo, John Robertson
Published in: Microelectronic Engineering, Issue 216, 2019, Page(s) 111057, ISSN 0167-9317
Publisher: Elsevier BV
DOI: 10.1016/j.mee.2019.111057

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

Author(s): Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian M. Ionescu, John Robertson, Siegfried Karg
Published in: Solid-State Electronics, 2019, Page(s) 107729, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2019.107729

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators

Author(s): E. Corti, A. Khanna, K. Niang, J. Robertson, K. E. Moselund, B. Gotsmann, S. Datta, S. Karg
Published in: IEEE Electron Device Letters, Issue 41/4, 2020, Page(s) 629-632, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.2972006

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Author(s): Andrei Muller, Riyaz Abdul Khadar, Tobias Abel, Nour Negm, Teodor Rosca, Anna Krammer, Matteo Cavalieri, Andreas Schüler, Fatemeh Qaderi, Jens Bolten, Max C. Lemme, Igor Stolichnov, Adrian M. Ionescu
Published in: ACS Applied Electronic Materials, 2020, ISSN 2637-6113
Publisher: American Chemical Society
DOI: 10.1021/acsaelm.0c00078

The Role of Ionic Liquid Breakdown in the Electrochemical Metallization of VO 2 : An NMR Study of Gating Mechanisms and VO 2 Reduction

Author(s): Michael A. Hope, Kent J. Griffith, Bin Cui, Fang Gao, Siân E. Dutton, Stuart S. P. Parkin, Clare P. Grey
Published in: Journal of the American Chemical Society, Issue 140/48, 2018, Page(s) 16685-16696, ISSN 0002-7863
Publisher: American Chemical Society
DOI: 10.1021/jacs.8b09513

Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition

Author(s): Kham M. Niang, Guandong Bai, John Robertson
Published in: Journal of Vacuum Science & Technology A, Issue 38/4, 2020, Page(s) 042401, ISSN 0734-2101
Publisher: American Institute of Physics
DOI: 10.1116/6.0000152

Ionic Liquid Gate-Induced Modifications of Step Edges at SrCoO 2.5 Surfaces

Author(s): Yuechen Zhuang, Bin Cui, Hao Yang, Fang Gao, Stuart. S. P. Parkin
Published in: ACS Nano, Issue 14/7, 2020, Page(s) 8562-8569, ISSN 1936-0851
Publisher: American Chemical Society
DOI: 10.1021/acsnano.0c02880

The 3D Smith Chart: From Theory to Experimental Reality

Author(s): Andrei A. Muller, Victor Asavei, Alin Moldoveanu, Esther Sanabria-Codesal, Riyaz A. Khadar, Cornel Popescu, Dan Dascalu, Adrian. M. Ionescu
Published in: IEEE Microwave Magazine, Issue 21/11, 2020, Page(s) 22-35, ISSN 1527-3342
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/mmm.2020.3014984

Electric Field Control of Phase Transition and Tunable Resistive Switching in SrFeO 2.5

Author(s): Muhammad Shahrukh Saleem, Bin Cui, Cheng Song, Yiming Sun, Youdi Gu, Ruiqi Zhang, Muhammad Umer Fayaz, Xiaofeng Zhou, Peter Werner, Stuart S. P. Parkin, Feng Pan
Published in: ACS Applied Materials & Interfaces, Issue 11/6, 2019, Page(s) 6581-6588, ISSN 1944-8244
Publisher: American Chemical Society
DOI: 10.1021/acsami.8b18251

Direct imaging of structural changes induced by ionic liquid gating leading to engineered three-dimensional meso-structures

Author(s): Bin Cui, Peter Werner, Tianping Ma, Xiaoyan Zhong, Zechao Wang, James Mark Taylor, Yuechen Zhuang, Stuart S. P. Parkin
Published in: Nature Communications, Issue 9/1, 2018, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-018-05330-1

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

Author(s): Andrei A. Muller, Matteo Cavalieri, Adrian M. Ionescu
Published in: Applied Physics Letters, Issue 117/17, 2020, Page(s) 171902, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0021942

Conference proceedings (3)

VO 2 oscillators coupling for Neuromorphic Computation

Author(s): Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Guofang Zhong, John Robertson, Siegfried Karg
Published in: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, Page(s) 1-4, ISBN 978-1-7281-1658-7
Publisher: IEEE
DOI: 10.1109/eurosoi-ulis45800.2019.9041875

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO 2 ) Phase Change Switches

Author(s): Andrei A. Muller, Riyaz Abdul Khadar, Emanuele A. Casu, Anna Krammer, Matteo Cavalieri, Andreas Schuler, Junrui Zhang, Adrian M. Ionescu
Published in: 2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, Page(s) 865-868, ISBN 978-1-7281-1309-8
Publisher: IEEE
DOI: 10.1109/mwsym.2019.8701121

Resistive Coupled VO<inf>2</inf> Oscillators for Image Recognition

Author(s): Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Siegfried Karg
Published in: 2018 IEEE International Conference on Rebooting Computing (ICRC), 2018, Page(s) 1-7, ISBN 978-1-5386-9170-0
Publisher: IEEE
DOI: 10.1109/icrc.2018.8638626

Other (1)

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Author(s): Elisabetta Corti , Joaquin Antonio Cornejo Jimenez , Kham M. Niang , John Robertson, Kirsten E. Moselund , Bernd Gotsmann , Adrian M. Ionescu3 and Siegfried Karg
Published in: arxiv-reprint, 2021
Publisher: arxiv