Phase-Change Materials and Switches for Enabling Beyond-CMOS Energy Efficient Applications

Risultati finali

2nd International PHASE-CHANGE SWITCH Symposium
1st International PHASE-CHANGE SWITCH Symposium
Website, project press release and flyer

Report on band gaps of Alloyed (V,metal)O2 systems

Report on band gaps of Alloyed (V,metal)O2 systems and on bandgap control by strain

Report on fundamental calculations: VO2 and V2O3 systems and band gap of NbO2

Report on fundamental calculations and electronic structure modelling of VO2 and V2O3 systems and band gap of NbO2

Two-terminal steep-slope MIT switches

Design of two-terminal steep-slope MIT switches

Design and simulation of VO2 RF switches and circuit applications
Report on the optimization of the three deposition processes

Report on the optimization of deposition, doping and strain processes

Fabrication and evaluation of solid-state ionitronic non-volatile memory

Design and demonstration of a solid-state ionitronic non-volatile memory

Plan for the Dissemination and Exploitation of the Project's Results (PDEPR)
Design and fabrication of coupled relaxation oscillators from MHz to GHz

Design and fabrication of coupled relaxation oscillators based on phase-change switches

Three-terminal steep-slope MIT switches.

Design of three-terminal steep-slope MIT switches

Data management plan

A DMP (Data Management Plan) will be established in collaboration with the EPFL Library (datamanagementplan@epfl.ch).

Pubblicazioni

Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide

Autori: Haichang Lu, Stewart Clark, Yuzheng Guo, John Robertson
Pubblicato in: Physical Chemistry Chemical Physics, Numero 22/24, 2020, Pagina/e 13474-13478, ISSN 1463-9076
Editore: Royal Society of Chemistry
DOI: 10.1039/d0cp01929a

Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys

Autori: Haichang Lu, Yuzheng Guo, John Robertson
Pubblicato in: Physical Review Materials, Numero 3/9, 2019, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.3.094603

3D Smith Chart Constant Quality Factor Semi-Circles Contours for Positive and Negative Resistance Circuits

Autori: Victor Asavei, Andrei A. Muller, Esther Sanabria-Codesal, Alin Moldoveanu, Adrian M. Ionescu
Pubblicato in: IEEE Access, Numero 8, 2020, Pagina/e 176012-176022, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3026917

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Autori: Guandong Bai, Kham M. Niang, John Robertson
Pubblicato in: Journal of Vacuum Science & Technology A, Numero 38/5, 2020, Pagina/e 052402, ISSN 0734-2101
Editore: American Institute of Physics
DOI: 10.1116/6.0000353

Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors

Autori: Zhaofu Zhang, Yuzheng Guo, Haichang Lu, Stewart J. Clark, John Robertson
Pubblicato in: Applied Physics Letters, Numero 116/13, 2020, Pagina/e 131602, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5135376

Elevated transition temperature in Ge doped VO 2 thin films

Autori: Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, Andreas Schüler
Pubblicato in: Journal of Applied Physics, Numero 122/4, 2017, Pagina/e 045304, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.4995965

Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Autori: Emanuele Andrea Casu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos, Adrian M. Ionescu
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 6, 2018, Pagina/e 965-971, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2837869

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

Autori: Emanuele Andrea Casu, Andrei A. Muller, Montserrat Fernandez-Bolanos, Alessandro Fumarola, Anna Krammer, Andreas Schuler, Adrian M. Ionescu
Pubblicato in: IEEE Access, Numero 6, 2018, Pagina/e 12206-12212, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2018.2795463

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Autori: Emanuele Andrea Casu, Andrei A. Muller, Matteo Cavalieri, Alessandro Fumarola, Adrian Mihai Ionescu, Montserrat Fernandez-Bolanos
Pubblicato in: IEEE Microwave and Wireless Components Letters, Numero 28/9, 2018, Pagina/e 795-797, ISSN 1531-1309
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2018.2854961

Density Functional Theory Studies of the Metal–Insulator Transition in Vanadium Dioxide Alloys

Autori: Haichang Lu, John Robertson
Pubblicato in: physica status solidi (b), Numero 256/12, 2019, Pagina/e 1900210, ISSN 0370-1972
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201900210

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Autori: Andrei A. Muller, Alin Moldoveanu, Victor Asavei, Riyaz A. Khadar, Esther Sanabria-Codesal, Anna Krammer, Montserrat Fernandez-Bolaños, Matteo Cavalieri, Junrui Zhang, Emanuele Casu, Andreas Schuler, Adrian M. Ionescu
Pubblicato in: Scientific Reports, Numero 9/1, 2019, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-019-54600-5

Band alignment calculation of dielectric films on VO2

Autori: Zhaofu Zhang, Jiaqi Chen, Yuzheng Guo, John Robertson
Pubblicato in: Microelectronic Engineering, Numero 216, 2019, Pagina/e 111057, ISSN 0167-9317
Editore: Elsevier BV
DOI: 10.1016/j.mee.2019.111057

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

Autori: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian M. Ionescu, John Robertson, Siegfried Karg
Pubblicato in: Solid-State Electronics, 2019, Pagina/e 107729, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2019.107729

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators

Autori: E. Corti, A. Khanna, K. Niang, J. Robertson, K. E. Moselund, B. Gotsmann, S. Datta, S. Karg
Pubblicato in: IEEE Electron Device Letters, Numero 41/4, 2020, Pagina/e 629-632, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.2972006

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Autori: Andrei Muller, Riyaz Abdul Khadar, Tobias Abel, Nour Negm, Teodor Rosca, Anna Krammer, Matteo Cavalieri, Andreas Schüler, Fatemeh Qaderi, Jens Bolten, Max C. Lemme, Igor Stolichnov, Adrian M. Ionescu
Pubblicato in: ACS Applied Electronic Materials, 2020, ISSN 2637-6113
Editore: American Chemical Society
DOI: 10.1021/acsaelm.0c00078

The Role of Ionic Liquid Breakdown in the Electrochemical Metallization of VO 2 : An NMR Study of Gating Mechanisms and VO 2 Reduction

Autori: Michael A. Hope, Kent J. Griffith, Bin Cui, Fang Gao, Siân E. Dutton, Stuart S. P. Parkin, Clare P. Grey
Pubblicato in: Journal of the American Chemical Society, Numero 140/48, 2018, Pagina/e 16685-16696, ISSN 0002-7863
Editore: American Chemical Society
DOI: 10.1021/jacs.8b09513

Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition

Autori: Kham M. Niang, Guandong Bai, John Robertson
Pubblicato in: Journal of Vacuum Science & Technology A, Numero 38/4, 2020, Pagina/e 042401, ISSN 0734-2101
Editore: American Institute of Physics
DOI: 10.1116/6.0000152

Ionic Liquid Gate-Induced Modifications of Step Edges at SrCoO 2.5 Surfaces

Autori: Yuechen Zhuang, Bin Cui, Hao Yang, Fang Gao, Stuart. S. P. Parkin
Pubblicato in: ACS Nano, Numero 14/7, 2020, Pagina/e 8562-8569, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.0c02880

The 3D Smith Chart: From Theory to Experimental Reality

Autori: Andrei A. Muller, Victor Asavei, Alin Moldoveanu, Esther Sanabria-Codesal, Riyaz A. Khadar, Cornel Popescu, Dan Dascalu, Adrian. M. Ionescu
Pubblicato in: IEEE Microwave Magazine, Numero 21/11, 2020, Pagina/e 22-35, ISSN 1527-3342
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/mmm.2020.3014984

Electric Field Control of Phase Transition and Tunable Resistive Switching in SrFeO 2.5

Autori: Muhammad Shahrukh Saleem, Bin Cui, Cheng Song, Yiming Sun, Youdi Gu, Ruiqi Zhang, Muhammad Umer Fayaz, Xiaofeng Zhou, Peter Werner, Stuart S. P. Parkin, Feng Pan
Pubblicato in: ACS Applied Materials & Interfaces, Numero 11/6, 2019, Pagina/e 6581-6588, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.8b18251

Direct imaging of structural changes induced by ionic liquid gating leading to engineered three-dimensional meso-structures

Autori: Bin Cui, Peter Werner, Tianping Ma, Xiaoyan Zhong, Zechao Wang, James Mark Taylor, Yuechen Zhuang, Stuart S. P. Parkin
Pubblicato in: Nature Communications, Numero 9/1, 2018, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-018-05330-1

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

Autori: Andrei A. Muller, Matteo Cavalieri, Adrian M. Ionescu
Pubblicato in: Applied Physics Letters, Numero 117/17, 2020, Pagina/e 171902, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0021942

VO 2 oscillators coupling for Neuromorphic Computation

Autori: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Guofang Zhong, John Robertson, Siegfried Karg
Pubblicato in: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, Pagina/e 1-4, ISBN 978-1-7281-1658-7
Editore: IEEE
DOI: 10.1109/eurosoi-ulis45800.2019.9041875

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO 2 ) Phase Change Switches

Autori: Andrei A. Muller, Riyaz Abdul Khadar, Emanuele A. Casu, Anna Krammer, Matteo Cavalieri, Andreas Schuler, Junrui Zhang, Adrian M. Ionescu
Pubblicato in: 2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, Pagina/e 865-868, ISBN 978-1-7281-1309-8
Editore: IEEE
DOI: 10.1109/mwsym.2019.8701121

Resistive Coupled VO<inf>2</inf> Oscillators for Image Recognition

Autori: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Siegfried Karg
Pubblicato in: 2018 IEEE International Conference on Rebooting Computing (ICRC), 2018, Pagina/e 1-7, ISBN 978-1-5386-9170-0
Editore: IEEE
DOI: 10.1109/icrc.2018.8638626

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Autori: Elisabetta Corti , Joaquin Antonio Cornejo Jimenez , Kham M. Niang , John Robertson, Kirsten E. Moselund , Bernd Gotsmann , Adrian M. Ionescu3 and Siegfried Karg
Pubblicato in: arxiv-reprint, 2021
Editore: arxiv

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