Phase-Change Materials and Switches for Enabling Beyond-CMOS Energy Efficient Applications

Rezultaty

2nd International PHASE-CHANGE SWITCH Symposium
1st International PHASE-CHANGE SWITCH Symposium
Website, project press release and flyer

Report on band gaps of Alloyed (V,metal)O2 systems

Report on band gaps of Alloyed (V,metal)O2 systems and on bandgap control by strain

Report on fundamental calculations: VO2 and V2O3 systems and band gap of NbO2

Report on fundamental calculations and electronic structure modelling of VO2 and V2O3 systems and band gap of NbO2

Two-terminal steep-slope MIT switches

Design of two-terminal steep-slope MIT switches

Design and simulation of VO2 RF switches and circuit applications
Report on the optimization of the three deposition processes

Report on the optimization of deposition, doping and strain processes

Fabrication and evaluation of solid-state ionitronic non-volatile memory

Design and demonstration of a solid-state ionitronic non-volatile memory

Plan for the Dissemination and Exploitation of the Project's Results (PDEPR)
Design and fabrication of coupled relaxation oscillators from MHz to GHz

Design and fabrication of coupled relaxation oscillators based on phase-change switches

Three-terminal steep-slope MIT switches.

Design of three-terminal steep-slope MIT switches

Data management plan

A DMP (Data Management Plan) will be established in collaboration with the EPFL Library (datamanagementplan@epfl.ch).

Publikacje

Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide

Autorzy: Haichang Lu, Stewart Clark, Yuzheng Guo, John Robertson
Opublikowane w: Physical Chemistry Chemical Physics, Numer 22/24, 2020, Strona(/y) 13474-13478, ISSN 1463-9076
Wydawca: Royal Society of Chemistry
DOI: 10.1039/d0cp01929a

Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys

Autorzy: Haichang Lu, Yuzheng Guo, John Robertson
Opublikowane w: Physical Review Materials, Numer 3/9, 2019, ISSN 2475-9953
Wydawca: American Physical Society
DOI: 10.1103/physrevmaterials.3.094603

3D Smith Chart Constant Quality Factor Semi-Circles Contours for Positive and Negative Resistance Circuits

Autorzy: Victor Asavei, Andrei A. Muller, Esther Sanabria-Codesal, Alin Moldoveanu, Adrian M. Ionescu
Opublikowane w: IEEE Access, Numer 8, 2020, Strona(/y) 176012-176022, ISSN 2169-3536
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3026917

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Autorzy: Guandong Bai, Kham M. Niang, John Robertson
Opublikowane w: Journal of Vacuum Science & Technology A, Numer 38/5, 2020, Strona(/y) 052402, ISSN 0734-2101
Wydawca: American Institute of Physics
DOI: 10.1116/6.0000353

Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors

Autorzy: Zhaofu Zhang, Yuzheng Guo, Haichang Lu, Stewart J. Clark, John Robertson
Opublikowane w: Applied Physics Letters, Numer 116/13, 2020, Strona(/y) 131602, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.5135376

Elevated transition temperature in Ge doped VO 2 thin films

Autorzy: Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, Andreas Schüler
Opublikowane w: Journal of Applied Physics, Numer 122/4, 2017, Strona(/y) 045304, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.4995965

Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Autorzy: Emanuele Andrea Casu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos, Adrian M. Ionescu
Opublikowane w: IEEE Journal of the Electron Devices Society, Numer 6, 2018, Strona(/y) 965-971, ISSN 2168-6734
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2837869

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

Autorzy: Emanuele Andrea Casu, Andrei A. Muller, Montserrat Fernandez-Bolanos, Alessandro Fumarola, Anna Krammer, Andreas Schuler, Adrian M. Ionescu
Opublikowane w: IEEE Access, Numer 6, 2018, Strona(/y) 12206-12212, ISSN 2169-3536
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2018.2795463

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Autorzy: Emanuele Andrea Casu, Andrei A. Muller, Matteo Cavalieri, Alessandro Fumarola, Adrian Mihai Ionescu, Montserrat Fernandez-Bolanos
Opublikowane w: IEEE Microwave and Wireless Components Letters, Numer 28/9, 2018, Strona(/y) 795-797, ISSN 1531-1309
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2018.2854961

Density Functional Theory Studies of the Metal–Insulator Transition in Vanadium Dioxide Alloys

Autorzy: Haichang Lu, John Robertson
Opublikowane w: physica status solidi (b), Numer 256/12, 2019, Strona(/y) 1900210, ISSN 0370-1972
Wydawca: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201900210

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Autorzy: Andrei A. Muller, Alin Moldoveanu, Victor Asavei, Riyaz A. Khadar, Esther Sanabria-Codesal, Anna Krammer, Montserrat Fernandez-Bolaños, Matteo Cavalieri, Junrui Zhang, Emanuele Casu, Andreas Schuler, Adrian M. Ionescu
Opublikowane w: Scientific Reports, Numer 9/1, 2019, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/s41598-019-54600-5

Band alignment calculation of dielectric films on VO2

Autorzy: Zhaofu Zhang, Jiaqi Chen, Yuzheng Guo, John Robertson
Opublikowane w: Microelectronic Engineering, Numer 216, 2019, Strona(/y) 111057, ISSN 0167-9317
Wydawca: Elsevier BV
DOI: 10.1016/j.mee.2019.111057

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

Autorzy: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian M. Ionescu, John Robertson, Siegfried Karg
Opublikowane w: Solid-State Electronics, 2019, Strona(/y) 107729, ISSN 0038-1101
Wydawca: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2019.107729

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators

Autorzy: E. Corti, A. Khanna, K. Niang, J. Robertson, K. E. Moselund, B. Gotsmann, S. Datta, S. Karg
Opublikowane w: IEEE Electron Device Letters, Numer 41/4, 2020, Strona(/y) 629-632, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.2972006

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Autorzy: Andrei Muller, Riyaz Abdul Khadar, Tobias Abel, Nour Negm, Teodor Rosca, Anna Krammer, Matteo Cavalieri, Andreas Schüler, Fatemeh Qaderi, Jens Bolten, Max C. Lemme, Igor Stolichnov, Adrian M. Ionescu
Opublikowane w: ACS Applied Electronic Materials, 2020, ISSN 2637-6113
Wydawca: American Chemical Society
DOI: 10.1021/acsaelm.0c00078

The Role of Ionic Liquid Breakdown in the Electrochemical Metallization of VO 2 : An NMR Study of Gating Mechanisms and VO 2 Reduction

Autorzy: Michael A. Hope, Kent J. Griffith, Bin Cui, Fang Gao, Siân E. Dutton, Stuart S. P. Parkin, Clare P. Grey
Opublikowane w: Journal of the American Chemical Society, Numer 140/48, 2018, Strona(/y) 16685-16696, ISSN 0002-7863
Wydawca: American Chemical Society
DOI: 10.1021/jacs.8b09513

Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition

Autorzy: Kham M. Niang, Guandong Bai, John Robertson
Opublikowane w: Journal of Vacuum Science & Technology A, Numer 38/4, 2020, Strona(/y) 042401, ISSN 0734-2101
Wydawca: American Institute of Physics
DOI: 10.1116/6.0000152

Ionic Liquid Gate-Induced Modifications of Step Edges at SrCoO 2.5 Surfaces

Autorzy: Yuechen Zhuang, Bin Cui, Hao Yang, Fang Gao, Stuart. S. P. Parkin
Opublikowane w: ACS Nano, Numer 14/7, 2020, Strona(/y) 8562-8569, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.0c02880

The 3D Smith Chart: From Theory to Experimental Reality

Autorzy: Andrei A. Muller, Victor Asavei, Alin Moldoveanu, Esther Sanabria-Codesal, Riyaz A. Khadar, Cornel Popescu, Dan Dascalu, Adrian. M. Ionescu
Opublikowane w: IEEE Microwave Magazine, Numer 21/11, 2020, Strona(/y) 22-35, ISSN 1527-3342
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/mmm.2020.3014984

Electric Field Control of Phase Transition and Tunable Resistive Switching in SrFeO 2.5

Autorzy: Muhammad Shahrukh Saleem, Bin Cui, Cheng Song, Yiming Sun, Youdi Gu, Ruiqi Zhang, Muhammad Umer Fayaz, Xiaofeng Zhou, Peter Werner, Stuart S. P. Parkin, Feng Pan
Opublikowane w: ACS Applied Materials & Interfaces, Numer 11/6, 2019, Strona(/y) 6581-6588, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.8b18251

Direct imaging of structural changes induced by ionic liquid gating leading to engineered three-dimensional meso-structures

Autorzy: Bin Cui, Peter Werner, Tianping Ma, Xiaoyan Zhong, Zechao Wang, James Mark Taylor, Yuechen Zhuang, Stuart S. P. Parkin
Opublikowane w: Nature Communications, Numer 9/1, 2018, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-018-05330-1

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

Autorzy: Andrei A. Muller, Matteo Cavalieri, Adrian M. Ionescu
Opublikowane w: Applied Physics Letters, Numer 117/17, 2020, Strona(/y) 171902, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/5.0021942

VO 2 oscillators coupling for Neuromorphic Computation

Autorzy: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Guofang Zhong, John Robertson, Siegfried Karg
Opublikowane w: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, Strona(/y) 1-4, ISBN 978-1-7281-1658-7
Wydawca: IEEE
DOI: 10.1109/eurosoi-ulis45800.2019.9041875

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO 2 ) Phase Change Switches

Autorzy: Andrei A. Muller, Riyaz Abdul Khadar, Emanuele A. Casu, Anna Krammer, Matteo Cavalieri, Andreas Schuler, Junrui Zhang, Adrian M. Ionescu
Opublikowane w: 2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, Strona(/y) 865-868, ISBN 978-1-7281-1309-8
Wydawca: IEEE
DOI: 10.1109/mwsym.2019.8701121

Resistive Coupled VO<inf>2</inf> Oscillators for Image Recognition

Autorzy: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Siegfried Karg
Opublikowane w: 2018 IEEE International Conference on Rebooting Computing (ICRC), 2018, Strona(/y) 1-7, ISBN 978-1-5386-9170-0
Wydawca: IEEE
DOI: 10.1109/icrc.2018.8638626

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Autorzy: Elisabetta Corti , Joaquin Antonio Cornejo Jimenez , Kham M. Niang , John Robertson, Kirsten E. Moselund , Bernd Gotsmann , Adrian M. Ionescu3 and Siegfried Karg
Opublikowane w: arxiv-reprint, 2021
Wydawca: arxiv

Rezultaty

Publikacje

Udostępnij tę stronę

Pobierz