Phase-Change Materials and Switches for Enabling Beyond-CMOS Energy Efficient Applications

Livrables

2nd International PHASE-CHANGE SWITCH Symposium
1st International PHASE-CHANGE SWITCH Symposium
Website, project press release and flyer

Report on band gaps of Alloyed (V,metal)O2 systems

Report on band gaps of Alloyed (V,metal)O2 systems and on bandgap control by strain

Report on fundamental calculations: VO2 and V2O3 systems and band gap of NbO2

Report on fundamental calculations and electronic structure modelling of VO2 and V2O3 systems and band gap of NbO2

Two-terminal steep-slope MIT switches

Design of two-terminal steep-slope MIT switches

Design and simulation of VO2 RF switches and circuit applications
Report on the optimization of the three deposition processes

Report on the optimization of deposition, doping and strain processes

Fabrication and evaluation of solid-state ionitronic non-volatile memory

Design and demonstration of a solid-state ionitronic non-volatile memory

Plan for the Dissemination and Exploitation of the Project's Results (PDEPR)
Design and fabrication of coupled relaxation oscillators from MHz to GHz

Design and fabrication of coupled relaxation oscillators based on phase-change switches

Three-terminal steep-slope MIT switches.

Design of three-terminal steep-slope MIT switches

Data management plan

A DMP (Data Management Plan) will be established in collaboration with the EPFL Library (datamanagementplan@epfl.ch).

Publications

Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide

Auteurs: Haichang Lu, Stewart Clark, Yuzheng Guo, John Robertson
Publié dans: Physical Chemistry Chemical Physics, Numéro 22/24, 2020, Page(s) 13474-13478, ISSN 1463-9076
Éditeur: Royal Society of Chemistry
DOI: 10.1039/d0cp01929a

Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys

Auteurs: Haichang Lu, Yuzheng Guo, John Robertson
Publié dans: Physical Review Materials, Numéro 3/9, 2019, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.3.094603

3D Smith Chart Constant Quality Factor Semi-Circles Contours for Positive and Negative Resistance Circuits

Auteurs: Victor Asavei, Andrei A. Muller, Esther Sanabria-Codesal, Alin Moldoveanu, Adrian M. Ionescu
Publié dans: IEEE Access, Numéro 8, 2020, Page(s) 176012-176022, ISSN 2169-3536
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3026917

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Auteurs: Guandong Bai, Kham M. Niang, John Robertson
Publié dans: Journal of Vacuum Science & Technology A, Numéro 38/5, 2020, Page(s) 052402, ISSN 0734-2101
Éditeur: American Institute of Physics
DOI: 10.1116/6.0000353

Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors

Auteurs: Zhaofu Zhang, Yuzheng Guo, Haichang Lu, Stewart J. Clark, John Robertson
Publié dans: Applied Physics Letters, Numéro 116/13, 2020, Page(s) 131602, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/1.5135376

Elevated transition temperature in Ge doped VO 2 thin films

Auteurs: Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, Andreas Schüler
Publié dans: Journal of Applied Physics, Numéro 122/4, 2017, Page(s) 045304, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.4995965

Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Auteurs: Emanuele Andrea Casu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos, Adrian M. Ionescu
Publié dans: IEEE Journal of the Electron Devices Society, Numéro 6, 2018, Page(s) 965-971, ISSN 2168-6734
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2837869

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

Auteurs: Emanuele Andrea Casu, Andrei A. Muller, Montserrat Fernandez-Bolanos, Alessandro Fumarola, Anna Krammer, Andreas Schuler, Adrian M. Ionescu
Publié dans: IEEE Access, Numéro 6, 2018, Page(s) 12206-12212, ISSN 2169-3536
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2018.2795463

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Auteurs: Emanuele Andrea Casu, Andrei A. Muller, Matteo Cavalieri, Alessandro Fumarola, Adrian Mihai Ionescu, Montserrat Fernandez-Bolanos
Publié dans: IEEE Microwave and Wireless Components Letters, Numéro 28/9, 2018, Page(s) 795-797, ISSN 1531-1309
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2018.2854961

Density Functional Theory Studies of the Metal–Insulator Transition in Vanadium Dioxide Alloys

Auteurs: Haichang Lu, John Robertson
Publié dans: physica status solidi (b), Numéro 256/12, 2019, Page(s) 1900210, ISSN 0370-1972
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201900210

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Auteurs: Andrei A. Muller, Alin Moldoveanu, Victor Asavei, Riyaz A. Khadar, Esther Sanabria-Codesal, Anna Krammer, Montserrat Fernandez-Bolaños, Matteo Cavalieri, Junrui Zhang, Emanuele Casu, Andreas Schuler, Adrian M. Ionescu
Publié dans: Scientific Reports, Numéro 9/1, 2019, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/s41598-019-54600-5

Band alignment calculation of dielectric films on VO2

Auteurs: Zhaofu Zhang, Jiaqi Chen, Yuzheng Guo, John Robertson
Publié dans: Microelectronic Engineering, Numéro 216, 2019, Page(s) 111057, ISSN 0167-9317
Éditeur: Elsevier BV
DOI: 10.1016/j.mee.2019.111057

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

Auteurs: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian M. Ionescu, John Robertson, Siegfried Karg
Publié dans: Solid-State Electronics, 2019, Page(s) 107729, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2019.107729

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators

Auteurs: E. Corti, A. Khanna, K. Niang, J. Robertson, K. E. Moselund, B. Gotsmann, S. Datta, S. Karg
Publié dans: IEEE Electron Device Letters, Numéro 41/4, 2020, Page(s) 629-632, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.2972006

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Auteurs: Andrei Muller, Riyaz Abdul Khadar, Tobias Abel, Nour Negm, Teodor Rosca, Anna Krammer, Matteo Cavalieri, Andreas Schüler, Fatemeh Qaderi, Jens Bolten, Max C. Lemme, Igor Stolichnov, Adrian M. Ionescu
Publié dans: ACS Applied Electronic Materials, 2020, ISSN 2637-6113
Éditeur: American Chemical Society
DOI: 10.1021/acsaelm.0c00078

The Role of Ionic Liquid Breakdown in the Electrochemical Metallization of VO 2 : An NMR Study of Gating Mechanisms and VO 2 Reduction

Auteurs: Michael A. Hope, Kent J. Griffith, Bin Cui, Fang Gao, Siân E. Dutton, Stuart S. P. Parkin, Clare P. Grey
Publié dans: Journal of the American Chemical Society, Numéro 140/48, 2018, Page(s) 16685-16696, ISSN 0002-7863
Éditeur: American Chemical Society
DOI: 10.1021/jacs.8b09513

Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition

Auteurs: Kham M. Niang, Guandong Bai, John Robertson
Publié dans: Journal of Vacuum Science & Technology A, Numéro 38/4, 2020, Page(s) 042401, ISSN 0734-2101
Éditeur: American Institute of Physics
DOI: 10.1116/6.0000152

Ionic Liquid Gate-Induced Modifications of Step Edges at SrCoO 2.5 Surfaces

Auteurs: Yuechen Zhuang, Bin Cui, Hao Yang, Fang Gao, Stuart. S. P. Parkin
Publié dans: ACS Nano, Numéro 14/7, 2020, Page(s) 8562-8569, ISSN 1936-0851
Éditeur: American Chemical Society
DOI: 10.1021/acsnano.0c02880

The 3D Smith Chart: From Theory to Experimental Reality

Auteurs: Andrei A. Muller, Victor Asavei, Alin Moldoveanu, Esther Sanabria-Codesal, Riyaz A. Khadar, Cornel Popescu, Dan Dascalu, Adrian. M. Ionescu
Publié dans: IEEE Microwave Magazine, Numéro 21/11, 2020, Page(s) 22-35, ISSN 1527-3342
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/mmm.2020.3014984

Electric Field Control of Phase Transition and Tunable Resistive Switching in SrFeO 2.5

Auteurs: Muhammad Shahrukh Saleem, Bin Cui, Cheng Song, Yiming Sun, Youdi Gu, Ruiqi Zhang, Muhammad Umer Fayaz, Xiaofeng Zhou, Peter Werner, Stuart S. P. Parkin, Feng Pan
Publié dans: ACS Applied Materials & Interfaces, Numéro 11/6, 2019, Page(s) 6581-6588, ISSN 1944-8244
Éditeur: American Chemical Society
DOI: 10.1021/acsami.8b18251

Direct imaging of structural changes induced by ionic liquid gating leading to engineered three-dimensional meso-structures

Auteurs: Bin Cui, Peter Werner, Tianping Ma, Xiaoyan Zhong, Zechao Wang, James Mark Taylor, Yuechen Zhuang, Stuart S. P. Parkin
Publié dans: Nature Communications, Numéro 9/1, 2018, ISSN 2041-1723
Éditeur: Nature Publishing Group
DOI: 10.1038/s41467-018-05330-1

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

Auteurs: Andrei A. Muller, Matteo Cavalieri, Adrian M. Ionescu
Publié dans: Applied Physics Letters, Numéro 117/17, 2020, Page(s) 171902, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0021942

VO 2 oscillators coupling for Neuromorphic Computation

Auteurs: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Guofang Zhong, John Robertson, Siegfried Karg
Publié dans: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, Page(s) 1-4, ISBN 978-1-7281-1658-7
Éditeur: IEEE
DOI: 10.1109/eurosoi-ulis45800.2019.9041875

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO 2 ) Phase Change Switches

Auteurs: Andrei A. Muller, Riyaz Abdul Khadar, Emanuele A. Casu, Anna Krammer, Matteo Cavalieri, Andreas Schuler, Junrui Zhang, Adrian M. Ionescu
Publié dans: 2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, Page(s) 865-868, ISBN 978-1-7281-1309-8
Éditeur: IEEE
DOI: 10.1109/mwsym.2019.8701121

Resistive Coupled VO<inf>2</inf> Oscillators for Image Recognition

Auteurs: Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Siegfried Karg
Publié dans: 2018 IEEE International Conference on Rebooting Computing (ICRC), 2018, Page(s) 1-7, ISBN 978-1-5386-9170-0
Éditeur: IEEE
DOI: 10.1109/icrc.2018.8638626

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Auteurs: Elisabetta Corti , Joaquin Antonio Cornejo Jimenez , Kham M. Niang , John Robertson, Kirsten E. Moselund , Bernd Gotsmann , Adrian M. Ionescu3 and Siegfried Karg
Publié dans: arxiv-reprint, 2021
Éditeur: arxiv

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