Quantum Nanowire Integrated Photonic Circuits

Informazioni relative al progetto

QUANtIC

ID dell’accordo di sovvenzione: 771747

DOI

10.3030/771747

Progetto chiuso

Data della firma CE 24 Gennaio 2018

Data di avvio 1 Gennaio 2019

Data di completamento 31 Dicembre 2024

Finanziato da

• EXCELLENT SCIENCE - European Research Council (ERC)

Costo totale

€ 1 743 850,00

Contributo UE

€ 1 743 850,00

Coordinato da

TECHNISCHE UNIVERSITAET MUENCHEN
Germany

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Conference proceedings (4)

Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)-AlGaAs Core-Shell Nanowire Lasers

Autori: T. Schreitmüller, H. W. Jeong, H. Esmaielpour, C. E. Mead, M. Ramsteiner, P. Schmiedeke, A. Thurn, A. Ajay, S. Matich, M. Döblinger, L. J. Lauhon, J. J. Finley, G. Koblmüller
Pubblicato in: CLEO 2024, 2024, Pagina/e JTu2A.51
Editore: Optica Publishing Group
DOI: 10.1364/cleo_at.2024.jtu2a.51

Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon

Autori: Fabio del Giudice, Sergej Fust, Paul Schmiedeke, Johannes Pantle, Markus Doblinger, Akhil Ajay, Steffen Meder, Hubert Riedl, Jonathan J. Finley, Gregor Koblmuller
Pubblicato in: 2022 Compound Semiconductor Week (CSW), 2022, Pagina/e 1-2
Editore: IEEE
DOI: 10.1109/csw55288.2022.9930369

Tuning Lasing Emission towards Long Wavelengths in GaAs-(In, Al)GaAs Core-Multishell Nanowires on Silicon

Autori: Thomas Stettner, Paul Schmiedeke, Andreas Thurn, Markus Doeblinger, Jochen Bissinger, Daniel Ruhstorfer, Jonathan J. Finley, Gregor Koblmueller
Pubblicato in: 2019 Compound Semiconductor Week (CSW), 2019, Pagina/e 1-1, ISBN 978-1-7281-0080-7
Editore: IEEE
DOI: 10.1109/iciprm.2019.8819203

Waveguide Coupling of an Integrated Nanowire Laser on Silicon with Enhanced End-Facet Reflectivity

Autori: Jochen Bissinger, Daniel Ruhstorfer, Thomas Stettner, Gregor Koblmueller, Jonathan J. Finley
Pubblicato in: Conference on Lasers and Electro-Optics, 2019, Pagina/e FW3C.7, ISBN 978-1-943580-57-6
Editore: OSA
DOI: 10.1364/cleo_qels.2019.fw3c.7

Peer reviewed articles (16)

Self-Induced Ultrafast Electron-Hole-Plasma Temperature Oscillations in Nanowire Lasers

Autori: Andreas Thurn, Jochen Bissinger, Stefan Meinecke, Paul Schmiedeke, Sang Soon Oh, Weng W. Chow, Kathy Lüdge, Gregor Koblmüller, Jonathan J. Finley
Pubblicato in: Physical Review Applied, Numero 20, 2023, ISSN 2331-7019
Editore: American Physical Society (APS)
DOI: 10.1103/physrevapplied.20.034045

Purcell enhanced coupling of nanowire quantum emitters to silicon photonic waveguides

Autori: Nitin Mukhundhan, Akhil Ajay, Jochen Bissinger, Jonathan J. Finley, Gregor Koblmüller
Pubblicato in: Optics Express, Numero 29, 2024, Pagina/e 43068, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.442527

Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects

Autori: A. Ajay, H. Jeong, T. Schreitmüller, M. Döblinger, D. Ruhstorfer, N. Mukhundhan, P. A. L. M. Koolen, J. J. Finley, G. Koblmüller
Pubblicato in: Applied Physics Letters, Numero 121, 2023, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0095952

High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement

Autori: Hyowon W. Jeong, Stephen A. Church, Markus Döblinger, Akhil Ajay, Benjamin Haubmann, Nikesh Patel, Jonathan J. Finley, Patrick W. Parkinson, Gregor Koblmüller
Pubblicato in: Nano Letters, Numero 24, 2024, Pagina/e 14515-14521, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.4c04852

Nanoscale mapping of carrier recombination in GaAs/AlGaAs core-multishell nanowires by cathodoluminescence imaging in a scanning transmission electron microscope

Autori: Marcus Müller, Frank Bertram, Peter Veit, Bernhard Loitsch, Julia Winnerl, Sonja Matich, Jonathan J. Finley, Gregor Koblmüller, Jürgen Christen
Pubblicato in: Applied Physics Letters, Numero 115/24, 2019, Pagina/e 243102, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5131704

Optimized waveguide coupling of an integrated III-V nanowire laser on silicon

Autori: Jochen Bissinger, Daniel Ruhstorfer, Thomas Stettner, Gregor Koblmüller, Jonathan J. Finley
Pubblicato in: Journal of Applied Physics, Numero 125/24, 2019, Pagina/e 243102, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.5097405

Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands

Autori: Bianca Scaparra, Elise Sirotti, Akhil Ajay, Björn Jonas, Beatrice Costa, Hubert Riedl, Pavel Avdienko, Ian D. Sharp, Gregor Koblmüller, Eugenio Zallo, Jonathan J. Finley, Kai Müller
Pubblicato in: ACS Applied Nano Materials, Numero 7, 2024, Pagina/e 26854-26862, ISSN 2574-0970
Editore: American Chemical Society (ACS)
DOI: 10.1021/acsanm.4c04810

Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality

Autori: P Schmiedeke, M Döblinger, M A Meinhold-Heerlein, C Doganlar, J J Finley, G Koblmüller
Pubblicato in: Nanotechnology, Numero 35, 2023, Pagina/e 055601, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ad06ce

Sb‐Mediated Tuning of Growth‐ and Exciton Dynamics in Entirely Catalyst‐Free GaAsSb Nanowires

Autori: Hyowon W. Jeong, Akhil Ajay, Haiting Yu, Markus Döblinger, Nitin Mukhundhan, Jonathan J. Finley, Gregor Koblmüller
Pubblicato in: Small, Numero 19, 2023, ISSN 1613-6810
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/smll.202207531

3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells

Autori: Megan O. Hill, Paul Schmiedeke, Chunyi Huang, Siddharth Maddali, Xiaobing Hu, Stephan O. Hruszkewycz, Jonathan J. Finley, Gregor Koblmüller, Lincoln J. Lauhon
Pubblicato in: ACS Nano, Numero 16, 2023, Pagina/e 20281-20293, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.2c06071

Continuous Wave Mid‐Infrared Lasing from Single InAs Nanowires Grown on Silicon

Autori: Steffen Meder, Benjamin Haubmann, Fabio del Giudice, Paul Schmiedeke, David Busse, Jona Zöllner, Jonathan J. Finley, Gregor Koblmüller
Pubblicato in: Advanced Functional Materials, Numero 35, 2025, ISSN 1616-301X
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202414046

Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale

Autori: Paul Schmiedeke, Federico Panciera, Jean-Christophe Harmand, Laurent Travers, Gregor Koblmüller
Pubblicato in: Nanoscale Advances, Numero 5, 2024, Pagina/e 2994-3004, ISSN 2516-0230
Editore: Royal Society of Chemistry (RSC)
DOI: 10.1039/d3na00135k

Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices

Autori: Hyowon W. Jeong, Akhil Ajay, Markus Döblinger, Sebastian Sturm, Mikel Gómez Ruiz, Richard Zell, Nitin Mukhundhan, Daniel Stelzner, Jonas Lähnemann, Knut Müller-Caspary, Jonathan J. Finley, Gregor Koblmüller
Pubblicato in: ACS Applied Nano Materials, Numero 7, 2025, Pagina/e 3032-3041, ISSN 2574-0970
Editore: American Chemical Society (ACS)
DOI: 10.1021/acsanm.3c05392

Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μ m at room temperature

Autori: P. Schmiedeke, A. Thurn, S. Matich, M. Döblinger, J. J. Finley, G. Koblmüller
Pubblicato in: Applied Physics Letters, Numero 118/22, 2021, Pagina/e 221103, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0048807

Hot carrier dynamics in III–V semiconductor nanowires under dominant radiative and Auger recombination

Autori: Hamidreza Esmaielpour, Paul Schmiedeke, Nabi Isaev, Cem Doganlar, Markus Döblinger, Jonathan J. Finley, Gregor Koblmüller
Pubblicato in: Applied Physics Letters, Numero 126, 2025, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0248247

Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires

Autori: T. Schreitmüller, D. Kumar Saluja, C. E. Mead, M. Ramsteiner, H. W. Jeong, H. Esmaielpour, C. Huang, D. Ruhstorfer, J. J. Finley, L. J. Lauhon, G. Koblmüller
Pubblicato in: Physical Review Materials, Numero 8, 2024, ISSN 2475-9953
Editore: American Physical Society (APS)
DOI: 10.1103/physrevmaterials.8.076002