An iono-electronic neuromorphic interface for communication with living systems

Informazioni relative al progetto

IONOS

ID dell’accordo di sovvenzione: 773228

DOI 10.3030/773228

Data della firma CE 13 Marzo 2018

Data di avvio 1 Novembre 2018

Data di completamento 31 Ottobre 2024

Finanziato da

• EXCELLENT SCIENCE - European Research Council (ERC)

Costo totale € 1 898 520,00

Contributo UE € 1 898 520,00

Coordinato da

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France

Pubblicazioni

Peer reviewed articles (5)

AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators

Autori: Tony Liu, Amirali Amirsoleimani, Fabien Alibart, Serge Ecoffey, Dominique Drouin, Roman Genov
Pubblicato in: IEEE Transactions on Circuits and Systems II: Express Briefs, Numero 68/4, 2021, Pagina/e 1128-1132, ISSN 1549-7747
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tcsii.2020.3026642

Low impedance and highly transparent microelectrode arrays (MEA) for in vitro neuron electrical activity probing

Autori: Anna Susloparova, Sophie Halliez, Séverine Begard, Morvane Colin, Luc Buée, Sébastien Pecqueur, Fabien Alibart, Vincent Thomy, Steve Arscott, Emiliano Pallecchi, Yannick Coffinier
Pubblicato in: Sensors and Actuators B: Chemical, Numero 327, 2021, Pagina/e 128895, ISSN 0925-4005
Editore: Elsevier BV
DOI: 10.1016/j.snb.2020.128895

Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories

Autori: Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin
Pubblicato in: Nanotechnology, Numero 31/44, 2020, Pagina/e 445205, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aba6b4

Investigation of resistive switching and transport mechanisms of Al 2 O 3 /TiO 2− x memristors under cryogenic conditions (1.5 K)

Autori: Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin
Pubblicato in: AIP Advances, Numero 10/2, 2020, Pagina/e 025305, ISSN 2158-3226
Editore: American Institute of Physics Inc.
DOI: 10.1063/1.5140994

In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives

Autori: Amirali Amirsoleimani, Fabien Alibart, Victor Yon, Jianxiong Xu, M. Reza Pazhouhandeh, Serge Ecoffey, Yann Beilliard, Roman Genov, Dominique Drouin
Pubblicato in: Advanced Intelligent Systems, Numero 2/11, 2020, Pagina/e 2000115, ISSN 2640-4567
Editore: Wiley-VCH
DOI: 10.1002/aisy.202000115

Conference proceedings (1)

Addressing Organic Electrochemical Transistors for Neurosensing and Neuromorphic Sensing

Autori: Mahdi Ghazal, Thomas Dargent, Sebastien Pecqueur, Fabien Alibart
Pubblicato in: 2019 IEEE SENSORS, 2019, Pagina/e 1-4, ISBN 978-1-7281-1634-1
Editore: IEEE
DOI: 10.1109/sensors43011.2019.8956648