Wafers for Automotive and other Key applications using Memories, embedded in Ulsi Processors

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Auteurs: Stefan Petzold, Eszter Piros, Robert Eilhardt, Alexander Zintler, Tobias Vogel, Nico Kaiser, Aldin Radetinac, Philipp Komissinskiy, Eric Jalaguier, Emmanuel Nolot, Christelle Charpin‐Nicolle, Christian Wenger, Leopoldo Molina‐Luna, Enrique Miranda, Lambert Alff
Publié dans: Advanced Electronic Materials, Numéro 6/11, 2020, Page(s) 2000439, ISSN 2199-160X
Éditeur: Wiley Online Library
DOI: 10.1002/aelm.202000439

Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

Auteurs: David Lehninger, Konstantin Mertens, Lukas Gerlich, Maximilian Lederer, Tarek Ali, Konrad Seidel
Publié dans: MRS Advances, Numéro 6/21, 2021, Page(s) 535-539, ISSN 2059-8521
Éditeur: Springer
DOI: 10.1557/s43580-021-00118-w

Structural properties of Ge-Sb-Te alloys

Auteurs: Hatun Cinkaya, Adil Ozturk, Arif Sirri Atilla Hasekioğlu, Zahit Evren Kaya, Seref Kalem, Christelle Charpin-Nicolle, Guillaume Bourgeois, Nicolas Guillaume, Marie Claire.Cyrille, Julien Garrione, Gabriele Navarro, Etienne Nowak
Publié dans: Solid-State Electronics, Numéro 185, 2021, Page(s) 108101, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108101

Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects

Auteurs: Tobias Vogel, Nico Kaiser, Stefan Petzold, Eszter Piros, Nicolas Guillaume, Gauthier Lefevre, Christelle Charpin-Nicolle, Sylvain David, Christophe Vallee, Etienne Nowak, Christina Trautmann, Lambert Alff
Publié dans: IEEE Transactions on Nuclear Science, Numéro 68/8, 2021, Page(s) 1542-1547, ISSN 0018-9499
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3085962

Role of Oxygen Defects in Conductive-Filament Formation in Y 2 O 3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

Auteurs: Eszter Piros, Martin Lonsky, Stefan Petzold, Alexander Zintler, S.U. Sharath, Tobias Vogel, Nico Kaiser, Robert Eilhardt, Leopoldo Molina-Luna, Christian Wenger, Jens Müller, Lambert Alff
Publié dans: Physical Review Applied, Numéro 14/3, 2020, ISSN 2331-7019
Éditeur: American Physical society
DOI: 10.1103/physrevapplied.14.034029

Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

Auteurs: Eszter Piros, Stefan Petzold, Alexander Zintler, Nico Kaiser, Tobias Vogel, Robert Eilhardt, Christian Wenger, Leopoldo Molina-Luna, Lambert Alff
Publié dans: Applied Physics Letters, Numéro 117/1, 2020, Page(s) 013504, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0009645

Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition

Auteurs: Fernando Leonel Aguirre, Nicolás M. Gomez, Sebastián Matías Pazos, Félix Palumbo, Jordi Suñé, Enrique Miranda
Publié dans: Journal of Low Power Electronics and Applications, Numéro 11/1, 2021, Page(s) 9, ISSN 2079-9268
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/jlpea11010009

Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications

Auteurs: G. Lama, G. Bourgeois, M. Bernard, N. Castellani, J. Sandrini, E. Nolot, J. Garrione, M.C. Cyrille, G. Navarro, E. Nowak
Publié dans: Microelectronics Reliability, Numéro 114, 2020, Page(s) 113823, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2020.113823

Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement

Auteurs: Anna Lisa Serra, Gauthier Lefevre, Olga Cueto, Guillaume Bourgeois, Marie Claire Cyrille, Gabriele Navarro, Etienne Nowak
Publié dans: Solid-State Electronics, Numéro 186, 2021, Page(s) 108111, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108111

A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

Auteurs: A. Rodriguez-Fernandez, J. Muñoz-Gorriz, J. Suñé, E. Miranda
Publié dans: Microelectronics Reliability, Numéro 88-90, 2018, Page(s) 142-146, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2018.06.120

Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO 2 -Based ReRAM Devices

Auteurs: A. Rodriguez-Fernandez, C. Cagli, J. Sune, E. Miranda
Publié dans: IEEE Electron Device Letters, Numéro 39/5, 2018, Page(s) 656-659, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2822047

Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

Auteurs: Gilbert Sassine, Cécile Nail, Philippe Blaise, Benoit Sklenard, Mathieu Bernard, Rémy Gassilloud, Aurélie Marty, Marc Veillerot, Christophe Vallée, Etienne Nowak, Gabriel Molas
Publié dans: Advanced Electronic Materials, Numéro 5/2, 2019, Page(s) 1800658, ISSN 2199-160X
Éditeur: Advanced Electronic Materials 2019
DOI: 10.1002/aelm.201800658

Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

Auteurs: Anthonin Verdy, Francesco d'Acapito, Jean-Baptiste Dory, Gabriele Navarro, Mathieu Bernard, Pierre Noé
Publié dans: physica status solidi (RRL) – Rapid Research Letters, 2019, Page(s) 1900548, ISSN 1862-6254
Éditeur: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201900548

Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

Auteurs: C. Charpin-Nicolle, M. Bonvalot, R. Sommer, A. Persico, M.L. Cordeau, S. Belahcen, B. Eychenne, Ph. Blaise, S. Martinie, S. Bernasconi, E. Jalaguier, E. Nowak
Publié dans: Microelectronic Engineering, 2019, Page(s) 111194, ISSN 0167-9317
Éditeur: Elsevier BV
DOI: 10.1016/j.mee.2019.111194

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Auteurs: Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Publié dans: Advanced Electronic Materials, Numéro 5/10, 2019, Page(s) 1900484, ISSN 2199-160X
Éditeur: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
DOI: 10.1002/aelm.201900484

Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes

Auteurs: S. Petzold, E. Miranda, S. U. Sharath, J. Muñoz-Gorriz, T. Vogel, E. Piros, N. Kaiser, R. Eilhardt, A. Zintler, L. Molina-Luna, J. Suñé, L. Alff
Publié dans: Journal of Applied Physics, Numéro 125/23, 2019, Page(s) 234503, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5094864

Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Auteurs: Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff
Publié dans: Semiconductor Science and Technology, Numéro 34/7, 2019, Page(s) 075008, ISSN 0268-1242
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ab220f

Self-Organizing Neural Networks Based on OxRAM Devices under a Fully Unsupervised Training Scheme

Auteurs: Marta Pedró, Javier Martín-Martínez, Marcos Maestro-Izquierdo, Rosana Rodríguez, Montserrat Nafría
Publié dans: Materials, Numéro 12/21, 2019, Page(s) 3482, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12213482

On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits

Auteurs: Agustín Cisternas Ferri, Alan Rapoport, Pablo I. Fierens, German A. Patterson, Enrique Miranda, Jordi Suñé
Publié dans: Materials, Numéro 12/14, 2019, Page(s) 2260, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12142260

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Auteurs: Fernando Leonel Aguirre, Alberto Rodriguez-Fernandez, Sebastian Matias Pazos, Jordi Sune, Enrique Miranda, Felix Palumbo
Publié dans: IEEE Transactions on Electron Devices, Numéro 66/8, 2019, Page(s) 3349-3355, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2922555

Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects

Auteurs: E. Miranda, A. Morell, J. Muñoz-Gorriz, J. Suñé
Publié dans: Microelectronics Reliability, Numéro 100-101, 2019, Page(s) 113327, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2019.06.019

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Auteurs: Maximilian Lederer, Thomas Kämpfe, Norman Vogel, Dirk Utess, Beate Volkmann, Tarek Ali, Ricardo Olivo, Johannes Müller, Sven Beyer, Martin Trentzsch, Konrad Seidel, Lukas M. Eng
Publié dans: Nanomaterials, Numéro 10/2, 2020, Page(s) 384, ISSN 2079-4991
Éditeur: MDPI
DOI: 10.3390/nano10020384

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Auteurs: David Lehninger, Ricardo Olivo, Tarek Ali, Maximilian Lederer, Thomas Kämpfe, Clemens Mart, Kati Biedermann, Kati Kühnel, Lisa Roy, Mahsa Kalkani, Konrad Seidel
Publié dans: physica status solidi (a), Numéro 217/8, 2020, Page(s) 1900840, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201900840

Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Auteurs: Enrique Miranda, Jordi Suñé
Publié dans: Materials, Numéro 13/4, 2020, Page(s) 938, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma13040938

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

Auteurs: M. Lederer, T. Kämpfe, R. Olivo, D. Lehninger, C. Mart, S. Kirbach, T. Ali, P. Polakowski, L. Roy, and K. Seidel
Publié dans: Appl. Phys. Lett., 2019, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/1.5129318

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

Auteurs: Fernando Leonel Aguirre, Sebastian Matias Pazos, Felix Palumbo, Jordi Sune, Enrique Miranda
Publié dans: IEEE Access, Numéro 8, 2020, Page(s) 202174-202193, ISSN 2169-3536
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3035638

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Auteurs: Maximilian Lederer, Ricardo Olivo, David Lehninger, Sukhrob Abdulazhanov, Thomas Kämpfe, Sven Kirbach, Clemens Mart, Konrad Seidel, Lukas M. Eng
Publié dans: physica status solidi (RRL) – Rapid Research Letters, Numéro 15/5, 2021, Page(s) 2100086, ISSN 1862-6254
Éditeur: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100086

Innovative Low-Power Self-Nanoconfined Phase-Change Memory

Auteurs: Anna Lisa Serra, Gauthier Lefevre, Guillaume Bourgeois, Chiara Sabbione, Niccolo' Castellani, Olga Cueto, Marie-Claire Cyrille, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Christophe Vallee, Sylvain David, Christelle Charpin-Nicolle, Gabriele Navarro, Etienne Nowak
Publié dans: IEEE Transactions on Electron Devices, Numéro 68/2, 2021, Page(s) 535-540, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3044267

Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO 2 Films

Auteurs: T. Kampfe, T. Vogel, R. Olivo, M. Lederer, N. Kaiser, S. Petzold, T. Ali, D. Lehninger, C. Trautmann, L. Alff, K. Seidel
Publié dans: 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF), 2020, Page(s) 1-3, ISBN 978-1-7281-6430-4
Éditeur: IEEE
DOI: 10.1109/ifcs-isaf41089.2020.9234942

Local switching voltage variation in ferroelectric Si-doped HfO2

Auteurs: M. N. Kalkani et al.
Publié dans: 2019
Éditeur: International Symposium on Integrated Functionalities (ISIF), Dublin, 2019

Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability

Auteurs: C. Laguna, N. Castellani, M. Bernard, N. Rochat, D. Rouchon, C. Sabbione, J. Garrione, E. Nolot, G. Bourgeois, M. C. Cyrille, L. Militaru, A. Souifi, G. Navarro, E. Nowak
Publié dans: 2020 IEEE International Memory Workshop (IMW), 2020, Page(s) 1-4, ISBN 978-1-7281-6306-2
Éditeur: IEEE
DOI: 10.1109/imw48823.2020.9108130

Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance

Auteurs: C. Laguna, M. Bernard, N. Bernier, D. Rouchon, N. Rochat, J. Garrione, A. Jannaud, E. Nolot, V. Meli, N. Castellani, C. Sabbione, G. Bourgeois, M. C. Cyrille, L. Militaru, A. Souifi, G. Navarro, E. Nowak
Publié dans: 2021 IEEE International Memory Workshop (IMW), 2021, Page(s) 1-4, ISBN 978-1-7281-8517-0
Éditeur: IEEE
DOI: 10.1109/imw51353.2021.9439590

Impact of Bottom Electrode Integration on OxRAM Arrays Variability

Auteurs: N.-P. Tran, J. Sandrini, A. Persico, J.-F. Nodin, T. Magis, R. Crochemore, N. Castellani, M.-C. Cyrille, G. Molas, E. Nowak
Publié dans: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2020, Page(s) 33-34, ISBN 978-1-7281-4232-6
Éditeur: IEEE
DOI: 10.1109/vlsi-tsa48913.2020.9203694

Heavy Ions Radiation effects on 4kb Phase-Change Memory

Auteurs: A.L. Serra, T. Vogel, G. Lefèvre, S. Petzold, N. Kaiser, G. Bourgeois, M.C. Cyrille, L. Alff, C. Trautmann, C. Vallée, D. Sylvain, C. Charpin-Nicolle, G. Navarro and E. Nowak
Publié dans: RADECS 2020, 2020
Éditeur: IEEE

Annealing effects on the structure of Ge-Sb-Te alloys

Auteurs: Cinkaya, A.S.A. Hasekioğlu, Z.E.Kaya, S. Kalem, C. Charpin-Nicolle, G. Navarro, N. Guillaume, M.C. Cyrille, G. Bourgeois, J. Garrione, E. Nowak
Publié dans: 2019
Éditeur: EUROSOI-ULIS conference (31/08-04/09/2020, Caen, France)https://eurosoiulis2020.sciencesconf.org/

Process influences on the microstructure of BEoL integrated ferroelectric hafnium zirconium oxide

Auteurs: Maximilian Lederer, David Lehninger, Sukhrob Abdulazhanov, Andre Reck, Ricardo Olivo, Thomas Kampfe, Konrad Seidel
Publié dans: 2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF), 2021, Page(s) 1-4, ISBN 978-1-6654-0444-0
Éditeur: IEEE
DOI: 10.1109/isaf51943.2021.9477392

SamurAI: A 1.7MOPS-36GOPS Adaptive Versatile IoT Node with 15,000× Peak-to-Idle Power Reduction, 207ns Wake-Up Time and 1.3TOPS/W ML Efficiency

Auteurs: Ivan Miro-Panades, Benoit Tain, Jean-Frederic Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Anthony Quelen, Emmanuel Pluchart, Jean-Philippe Noel, Reda Boumchedda, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Alexandre Valentian, Frederic Heitzmann, Edith Beigne, Fabien Clermidy
Publié dans: 2020 IEEE Symposium on VLSI Circuits, 2020, Page(s) 1-2, ISBN 978-1-7281-9942-9
Éditeur: IEEE
DOI: 10.1109/vlsicircuits18222.2020.9163000

PCM compact model: Optimized methodology for model card extraction

Auteurs: Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Jean-Michel Portal
Publié dans: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, Page(s) 190-193, ISBN 978-1-5386-6790-3
Éditeur: IEEE
DOI: 10.1109/SISPAD.2018.8551654

OTS selector devices: Material engineering for switching performance

Auteurs: M. C. Cyrille, A. Verdy, G. Navarro, G. Bourgeois, J. Garrione, M. Bernard, C. Sabbione, P. Noe, E. Nowak
Publié dans: 2018 International Conference on IC Design & Technology (ICICDT), 2018, Page(s) 113-116, ISBN 978-1-5386-2550-7
Éditeur: IEEE
DOI: 10.1109/ICICDT.2018.8399769

Optimizing Programming Energy for Improved RRAM Reliability for High Endurance Applications

Auteurs: Gilbert Sassine, Diego Alfaro Robayo, Cecile Nail, Jean-Francois Nodin, Jean Coignus, Gabriel Molas, Etienne Nowak
Publié dans: 2018 IEEE International Memory Workshop (IMW), 2018, Page(s) 1-4, ISBN 978-1-5386-5247-3
Éditeur: IEEE
DOI: 10.1109/IMW.2018.8388843

Engineering of Ovonic Threshold Switching Selectors: a Link from Material Properties to Electrical Performances

Auteurs: A. Verdy, M. Bernard, N. Castellani, P. Noé, F. D’Acapito, J. Garrione, G. Bourgeois, M.C. Cyrille, G. Navarro
Publié dans: ePCOS, 2019
Éditeur: CEA

Ferroelectric HfO 2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Auteurs: T. Francois, J. Coignus, L. Grenouillet, J.P. Barnes, N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta, M. Gros-Jean, S. Jeannot, P. Boivin, P. Chiquet, M. Bocquet, E. Nowak, F. Gaillard
Publié dans: 2019 IEEE 11th International Memory Workshop (IMW), 2019, Page(s) 1-4, ISBN 978-1-7281-0981-7
Éditeur: IEEE
DOI: 10.1109/imw.2019.8739664

Phase-Change Memory: A quest from material engineering towards the device performances

Auteurs: G. Bourgeois, M. C. Cyrille, J. Garrione, C. Sabbione, M. Bernard, E. Nolot, G. Navarro and E. Nowak
Publié dans: AVS 66th International Symposium & Exhibition, 2019
Éditeur: American Vacuum Society

Improvement of HRS variability in OXRAM by tailored metallic liner

Auteurs: N. Guillaume, M. Azzaz, S. Blonkowski, E. Jalaguier, P. Gonon, C. Vallée, T. Blomberg, M. Tuominen, H. Spreys, S. Bernasconi, C. Charpin-Nicolle, E. Nowak
Publié dans: SSDM2019, 2019
Éditeur: SSDM

Embedded Select in Trench Memory (eSTM), best in class 40nm floating gate based cell: a process integration challenge

Auteurs: S. Niel, F. La Rosa, A. Regnier, M. Mantelli, F. Trenteseaux, G. Ghezzi, A. Marzaki, Q. Hubert, J. Delalleau, T. Cabout, F. Maugain, E. Lepape, L. Baron, A. Champenois, D. Galpin, N. Cherault, S. Audran, L. Parmigiani, P. Gouraud, B. Duclaux, Y. Escarabajal, F. Baudin, E. Beche, B. Saidi, V. Arnal
Publié dans: 2018 IEEE International Electron Devices Meeting (IEDM), Numéro 2018 IEEE International Electron Devices Meeting, 2018, Page(s) 7.4.1-7.4.4, ISBN 978-1-7281-1987-8
Éditeur: IEEE
DOI: 10.1109/iedm.2018.8614517

Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory

Auteurs: F. Arnaud, P. Zuliani, J.P. Reynard, A. Gandolfo, F. Disegni, P. Mattavelli, E. Gomiero, G. Samanni, C. Jahan, R. Berthelon, O. Weber, E. Richard, V. Barral, A. Villaret, S. Kohler, J.C. Grenier, R. Ranica, C. Gallon, A. Souhaite, D. Ristoiu, L. Favennec, V. Caubet, S. Delmedico, N. Cherault, R. Beneyton, S. Chouteau, P.O. Sassoulas, A. Vernhet, Y. Le Friec, F. Domengie, L. Scotti, D. Pacelli, J.L
Publié dans: 2018 IEEE International Electron Devices Meeting (IEDM), Numéro 2018 IEEE International Electron Devices Meeting, 2018, Page(s) 18.4.1-18.4.4, ISBN 978-1-7281-1987-8
Éditeur: IEEE
DOI: 10.1109/iedm.2018.8614595

Optimized Reading Window for Crossbar Arrays Thanks to Ge-Se-Sb-N-based OTS Selectors

Auteurs: A. Verdy, M. Bernard, J. Garrione, G. Bourgeois, M. C. Cyrille, E. Nolot, N. Castellani, P. Noe, C. Socquet-Clerc, T. Magis, G. Sassine, G. Molas, G. Navarro, E. Nowak
Publié dans: 2018 IEEE International Electron Devices Meeting (IEDM), Numéro IEDM, San Francisco, 2018, Page(s) 37.4.1-37.4.4, ISBN 978-1-7281-1987-8
Éditeur: IEEE
DOI: 10.1109/iedm.2018.8614686

Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

Auteurs: D. Alfaro Robayo, G. Sassine, J. Minguet Lopez, L. Grenouillet, A. Verdy, G. Navarro, M. Bernard, E. Esmanhotto, C. Carabasse, E. Vianello, N. Castellani, L. Ciampolini, B. Giraud, C. Cagli, G. Guibaudo, E. Nowak, G. Molas
Publié dans: 2019
Éditeur: IEEE
DOI: 10.1109/iedm19573.2019.8993439

OxRAM for embedded solutions on advanced node: scaling perspectives considering statistical reliability and design constraints

Auteurs: J. Sandrini, M. Barlas, J. F. Nodin, O. Billoint, G. Molas, R. Fournel, E. Nowak, F. Gaillard, C. Cagli, L. Grenouillet, V. Meli, N. Castellani, I. Hammad, S. Bernasconi, F. Aussenac, S. Van Duijn, G. Audoit
Publié dans: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 30.5.1-30.5.4, ISBN 978-1-7281-4032-2
Éditeur: IEEE
DOI: 10.1109/iedm19573.2019.8993484

Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory

Auteurs: G. Lama, M. Bernard, N. Bernier, G. Bourgeois, E. Nolot, N. Castellani, J. Garrione, M. C. Cyrille, G. Navarro, E. Nowak
Publié dans: 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, Page(s) 1-6, ISBN 978-1-7281-6893-7
Éditeur: IEEE
DOI: 10.1109/irps46558.2021.9405116

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization

Auteurs: J. Minguet Lopez, L. Hudeley, L. Grenouillet, D. Alfaro Robayo, J. Sandrini, G. Navarro, M. Bernard, C. Carabasse, D. Deleruyelle, N. Castellani, M. Bocquet, J. M. Portal, E. Nowak, G. Molas
Publié dans: 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, Page(s) 1-6, ISBN 978-1-7281-6893-7
Éditeur: IEEE
DOI: 10.1109/irps46558.2021.9405195

Temperature Dependent Study of Microstructure Evolution in HfO2 Based Memristive Devices (oral presentation)

Auteurs: R. Eilhardt, A. Zintler, O. Ricalde, S. Petzold, L. Alff, und L. Molina-Luna
Publié dans: 2019
Éditeur: MRS Fall 2019 (Boston)

Defect Engineering in Transition Metal Oxide-based Resistive Random Access Memory

Auteurs: Petzold, Stefan
Publié dans: Numéro 2, 2020
Éditeur: Darmstadt, Technische Universität
DOI: 10.25534/tuprints-00011328

Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Auteurs: Jordi Suñé
Publié dans: 2020, ISBN 978-3-03928-576-1
Éditeur: MDPI

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