Wafers for Automotive and other Key applications using Memories, embedded in Ulsi Processors

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Autori: Stefan Petzold, Eszter Piros, Robert Eilhardt, Alexander Zintler, Tobias Vogel, Nico Kaiser, Aldin Radetinac, Philipp Komissinskiy, Eric Jalaguier, Emmanuel Nolot, Christelle Charpin‐Nicolle, Christian Wenger, Leopoldo Molina‐Luna, Enrique Miranda, Lambert Alff
Pubblicato in: Advanced Electronic Materials, Numero 6/11, 2020, Pagina/e 2000439, ISSN 2199-160X
Editore: Wiley Online Library
DOI: 10.1002/aelm.202000439

Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

Autori: David Lehninger, Konstantin Mertens, Lukas Gerlich, Maximilian Lederer, Tarek Ali, Konrad Seidel
Pubblicato in: MRS Advances, Numero 6/21, 2021, Pagina/e 535-539, ISSN 2059-8521
Editore: Springer
DOI: 10.1557/s43580-021-00118-w

Structural properties of Ge-Sb-Te alloys

Autori: Hatun Cinkaya, Adil Ozturk, Arif Sirri Atilla Hasekioğlu, Zahit Evren Kaya, Seref Kalem, Christelle Charpin-Nicolle, Guillaume Bourgeois, Nicolas Guillaume, Marie Claire.Cyrille, Julien Garrione, Gabriele Navarro, Etienne Nowak
Pubblicato in: Solid-State Electronics, Numero 185, 2021, Pagina/e 108101, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108101

Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects

Autori: Tobias Vogel, Nico Kaiser, Stefan Petzold, Eszter Piros, Nicolas Guillaume, Gauthier Lefevre, Christelle Charpin-Nicolle, Sylvain David, Christophe Vallee, Etienne Nowak, Christina Trautmann, Lambert Alff
Pubblicato in: IEEE Transactions on Nuclear Science, Numero 68/8, 2021, Pagina/e 1542-1547, ISSN 0018-9499
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tns.2021.3085962

Role of Oxygen Defects in Conductive-Filament Formation in Y 2 O 3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

Autori: Eszter Piros, Martin Lonsky, Stefan Petzold, Alexander Zintler, S.U. Sharath, Tobias Vogel, Nico Kaiser, Robert Eilhardt, Leopoldo Molina-Luna, Christian Wenger, Jens Müller, Lambert Alff
Pubblicato in: Physical Review Applied, Numero 14/3, 2020, ISSN 2331-7019
Editore: American Physical society
DOI: 10.1103/physrevapplied.14.034029

Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

Autori: Eszter Piros, Stefan Petzold, Alexander Zintler, Nico Kaiser, Tobias Vogel, Robert Eilhardt, Christian Wenger, Leopoldo Molina-Luna, Lambert Alff
Pubblicato in: Applied Physics Letters, Numero 117/1, 2020, Pagina/e 013504, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0009645

Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition

Autori: Fernando Leonel Aguirre, Nicolás M. Gomez, Sebastián Matías Pazos, Félix Palumbo, Jordi Suñé, Enrique Miranda
Pubblicato in: Journal of Low Power Electronics and Applications, Numero 11/1, 2021, Pagina/e 9, ISSN 2079-9268
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/jlpea11010009

Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications

Autori: G. Lama, G. Bourgeois, M. Bernard, N. Castellani, J. Sandrini, E. Nolot, J. Garrione, M.C. Cyrille, G. Navarro, E. Nowak
Pubblicato in: Microelectronics Reliability, Numero 114, 2020, Pagina/e 113823, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2020.113823

Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement

Autori: Anna Lisa Serra, Gauthier Lefevre, Olga Cueto, Guillaume Bourgeois, Marie Claire Cyrille, Gabriele Navarro, Etienne Nowak
Pubblicato in: Solid-State Electronics, Numero 186, 2021, Pagina/e 108111, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108111

A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

Autori: A. Rodriguez-Fernandez, J. Muñoz-Gorriz, J. Suñé, E. Miranda
Pubblicato in: Microelectronics Reliability, Numero 88-90, 2018, Pagina/e 142-146, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2018.06.120

Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO 2 -Based ReRAM Devices

Autori: A. Rodriguez-Fernandez, C. Cagli, J. Sune, E. Miranda
Pubblicato in: IEEE Electron Device Letters, Numero 39/5, 2018, Pagina/e 656-659, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2822047

Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

Autori: Gilbert Sassine, Cécile Nail, Philippe Blaise, Benoit Sklenard, Mathieu Bernard, Rémy Gassilloud, Aurélie Marty, Marc Veillerot, Christophe Vallée, Etienne Nowak, Gabriel Molas
Pubblicato in: Advanced Electronic Materials, Numero 5/2, 2019, Pagina/e 1800658, ISSN 2199-160X
Editore: Advanced Electronic Materials 2019
DOI: 10.1002/aelm.201800658

Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

Autori: Anthonin Verdy, Francesco d'Acapito, Jean-Baptiste Dory, Gabriele Navarro, Mathieu Bernard, Pierre Noé
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, 2019, Pagina/e 1900548, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201900548

Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

Autori: C. Charpin-Nicolle, M. Bonvalot, R. Sommer, A. Persico, M.L. Cordeau, S. Belahcen, B. Eychenne, Ph. Blaise, S. Martinie, S. Bernasconi, E. Jalaguier, E. Nowak
Pubblicato in: Microelectronic Engineering, 2019, Pagina/e 111194, ISSN 0167-9317
Editore: Elsevier BV
DOI: 10.1016/j.mee.2019.111194

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Autori: Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Pubblicato in: Advanced Electronic Materials, Numero 5/10, 2019, Pagina/e 1900484, ISSN 2199-160X
Editore: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
DOI: 10.1002/aelm.201900484

Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes

Autori: S. Petzold, E. Miranda, S. U. Sharath, J. Muñoz-Gorriz, T. Vogel, E. Piros, N. Kaiser, R. Eilhardt, A. Zintler, L. Molina-Luna, J. Suñé, L. Alff
Pubblicato in: Journal of Applied Physics, Numero 125/23, 2019, Pagina/e 234503, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.5094864

Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Autori: Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff
Pubblicato in: Semiconductor Science and Technology, Numero 34/7, 2019, Pagina/e 075008, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ab220f

Self-Organizing Neural Networks Based on OxRAM Devices under a Fully Unsupervised Training Scheme

Autori: Marta Pedró, Javier Martín-Martínez, Marcos Maestro-Izquierdo, Rosana Rodríguez, Montserrat Nafría
Pubblicato in: Materials, Numero 12/21, 2019, Pagina/e 3482, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma12213482

On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits

Autori: Agustín Cisternas Ferri, Alan Rapoport, Pablo I. Fierens, German A. Patterson, Enrique Miranda, Jordi Suñé
Pubblicato in: Materials, Numero 12/14, 2019, Pagina/e 2260, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma12142260

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Autori: Fernando Leonel Aguirre, Alberto Rodriguez-Fernandez, Sebastian Matias Pazos, Jordi Sune, Enrique Miranda, Felix Palumbo
Pubblicato in: IEEE Transactions on Electron Devices, Numero 66/8, 2019, Pagina/e 3349-3355, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2019.2922555

Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects

Autori: E. Miranda, A. Morell, J. Muñoz-Gorriz, J. Suñé
Pubblicato in: Microelectronics Reliability, Numero 100-101, 2019, Pagina/e 113327, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2019.06.019

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Autori: Maximilian Lederer, Thomas Kämpfe, Norman Vogel, Dirk Utess, Beate Volkmann, Tarek Ali, Ricardo Olivo, Johannes Müller, Sven Beyer, Martin Trentzsch, Konrad Seidel, Lukas M. Eng
Pubblicato in: Nanomaterials, Numero 10/2, 2020, Pagina/e 384, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano10020384

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Autori: David Lehninger, Ricardo Olivo, Tarek Ali, Maximilian Lederer, Thomas Kämpfe, Clemens Mart, Kati Biedermann, Kati Kühnel, Lisa Roy, Mahsa Kalkani, Konrad Seidel
Pubblicato in: physica status solidi (a), Numero 217/8, 2020, Pagina/e 1900840, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201900840

Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Autori: Enrique Miranda, Jordi Suñé
Pubblicato in: Materials, Numero 13/4, 2020, Pagina/e 938, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma13040938

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

Autori: M. Lederer, T. Kämpfe, R. Olivo, D. Lehninger, C. Mart, S. Kirbach, T. Ali, P. Polakowski, L. Roy, and K. Seidel
Pubblicato in: Appl. Phys. Lett., 2019, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5129318

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

Autori: Fernando Leonel Aguirre, Sebastian Matias Pazos, Felix Palumbo, Jordi Sune, Enrique Miranda
Pubblicato in: IEEE Access, Numero 8, 2020, Pagina/e 202174-202193, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3035638

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Autori: Maximilian Lederer, Ricardo Olivo, David Lehninger, Sukhrob Abdulazhanov, Thomas Kämpfe, Sven Kirbach, Clemens Mart, Konrad Seidel, Lukas M. Eng
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, Numero 15/5, 2021, Pagina/e 2100086, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100086

Innovative Low-Power Self-Nanoconfined Phase-Change Memory

Autori: Anna Lisa Serra, Gauthier Lefevre, Guillaume Bourgeois, Chiara Sabbione, Niccolo' Castellani, Olga Cueto, Marie-Claire Cyrille, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Christophe Vallee, Sylvain David, Christelle Charpin-Nicolle, Gabriele Navarro, Etienne Nowak
Pubblicato in: IEEE Transactions on Electron Devices, Numero 68/2, 2021, Pagina/e 535-540, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3044267

Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO 2 Films

Autori: T. Kampfe, T. Vogel, R. Olivo, M. Lederer, N. Kaiser, S. Petzold, T. Ali, D. Lehninger, C. Trautmann, L. Alff, K. Seidel
Pubblicato in: 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF), 2020, Pagina/e 1-3, ISBN 978-1-7281-6430-4
Editore: IEEE
DOI: 10.1109/ifcs-isaf41089.2020.9234942

Local switching voltage variation in ferroelectric Si-doped HfO2

Autori: M. N. Kalkani et al.
Pubblicato in: 2019
Editore: International Symposium on Integrated Functionalities (ISIF), Dublin, 2019

Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability

Autori: C. Laguna, N. Castellani, M. Bernard, N. Rochat, D. Rouchon, C. Sabbione, J. Garrione, E. Nolot, G. Bourgeois, M. C. Cyrille, L. Militaru, A. Souifi, G. Navarro, E. Nowak
Pubblicato in: 2020 IEEE International Memory Workshop (IMW), 2020, Pagina/e 1-4, ISBN 978-1-7281-6306-2
Editore: IEEE
DOI: 10.1109/imw48823.2020.9108130

Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance

Autori: C. Laguna, M. Bernard, N. Bernier, D. Rouchon, N. Rochat, J. Garrione, A. Jannaud, E. Nolot, V. Meli, N. Castellani, C. Sabbione, G. Bourgeois, M. C. Cyrille, L. Militaru, A. Souifi, G. Navarro, E. Nowak
Pubblicato in: 2021 IEEE International Memory Workshop (IMW), 2021, Pagina/e 1-4, ISBN 978-1-7281-8517-0
Editore: IEEE
DOI: 10.1109/imw51353.2021.9439590

Impact of Bottom Electrode Integration on OxRAM Arrays Variability

Autori: N.-P. Tran, J. Sandrini, A. Persico, J.-F. Nodin, T. Magis, R. Crochemore, N. Castellani, M.-C. Cyrille, G. Molas, E. Nowak
Pubblicato in: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2020, Pagina/e 33-34, ISBN 978-1-7281-4232-6
Editore: IEEE
DOI: 10.1109/vlsi-tsa48913.2020.9203694

Heavy Ions Radiation effects on 4kb Phase-Change Memory

Autori: A.L. Serra, T. Vogel, G. Lefèvre, S. Petzold, N. Kaiser, G. Bourgeois, M.C. Cyrille, L. Alff, C. Trautmann, C. Vallée, D. Sylvain, C. Charpin-Nicolle, G. Navarro and E. Nowak
Pubblicato in: RADECS 2020, 2020
Editore: IEEE

Annealing effects on the structure of Ge-Sb-Te alloys

Autori: Cinkaya, A.S.A. Hasekioğlu, Z.E.Kaya, S. Kalem, C. Charpin-Nicolle, G. Navarro, N. Guillaume, M.C. Cyrille, G. Bourgeois, J. Garrione, E. Nowak
Pubblicato in: 2019
Editore: EUROSOI-ULIS conference (31/08-04/09/2020, Caen, France)https://eurosoiulis2020.sciencesconf.org/

Process influences on the microstructure of BEoL integrated ferroelectric hafnium zirconium oxide

Autori: Maximilian Lederer, David Lehninger, Sukhrob Abdulazhanov, Andre Reck, Ricardo Olivo, Thomas Kampfe, Konrad Seidel
Pubblicato in: 2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF), 2021, Pagina/e 1-4, ISBN 978-1-6654-0444-0
Editore: IEEE
DOI: 10.1109/isaf51943.2021.9477392

SamurAI: A 1.7MOPS-36GOPS Adaptive Versatile IoT Node with 15,000× Peak-to-Idle Power Reduction, 207ns Wake-Up Time and 1.3TOPS/W ML Efficiency

Autori: Ivan Miro-Panades, Benoit Tain, Jean-Frederic Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Anthony Quelen, Emmanuel Pluchart, Jean-Philippe Noel, Reda Boumchedda, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Alexandre Valentian, Frederic Heitzmann, Edith Beigne, Fabien Clermidy
Pubblicato in: 2020 IEEE Symposium on VLSI Circuits, 2020, Pagina/e 1-2, ISBN 978-1-7281-9942-9
Editore: IEEE
DOI: 10.1109/vlsicircuits18222.2020.9163000

PCM compact model: Optimized methodology for model card extraction

Autori: Corentin Pigot, Fabien Gilibert, Marina Reyboz, Marc Bocquet, Jean-Michel Portal
Pubblicato in: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, Pagina/e 190-193, ISBN 978-1-5386-6790-3
Editore: IEEE
DOI: 10.1109/SISPAD.2018.8551654

OTS selector devices: Material engineering for switching performance

Autori: M. C. Cyrille, A. Verdy, G. Navarro, G. Bourgeois, J. Garrione, M. Bernard, C. Sabbione, P. Noe, E. Nowak
Pubblicato in: 2018 International Conference on IC Design & Technology (ICICDT), 2018, Pagina/e 113-116, ISBN 978-1-5386-2550-7
Editore: IEEE
DOI: 10.1109/ICICDT.2018.8399769

Optimizing Programming Energy for Improved RRAM Reliability for High Endurance Applications

Autori: Gilbert Sassine, Diego Alfaro Robayo, Cecile Nail, Jean-Francois Nodin, Jean Coignus, Gabriel Molas, Etienne Nowak
Pubblicato in: 2018 IEEE International Memory Workshop (IMW), 2018, Pagina/e 1-4, ISBN 978-1-5386-5247-3
Editore: IEEE
DOI: 10.1109/IMW.2018.8388843

Engineering of Ovonic Threshold Switching Selectors: a Link from Material Properties to Electrical Performances

Autori: A. Verdy, M. Bernard, N. Castellani, P. Noé, F. D’Acapito, J. Garrione, G. Bourgeois, M.C. Cyrille, G. Navarro
Pubblicato in: ePCOS, 2019
Editore: CEA

Ferroelectric HfO 2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Autori: T. Francois, J. Coignus, L. Grenouillet, J.P. Barnes, N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta, M. Gros-Jean, S. Jeannot, P. Boivin, P. Chiquet, M. Bocquet, E. Nowak, F. Gaillard
Pubblicato in: 2019 IEEE 11th International Memory Workshop (IMW), 2019, Pagina/e 1-4, ISBN 978-1-7281-0981-7
Editore: IEEE
DOI: 10.1109/imw.2019.8739664

Phase-Change Memory: A quest from material engineering towards the device performances

Autori: G. Bourgeois, M. C. Cyrille, J. Garrione, C. Sabbione, M. Bernard, E. Nolot, G. Navarro and E. Nowak
Pubblicato in: AVS 66th International Symposium & Exhibition, 2019
Editore: American Vacuum Society

Improvement of HRS variability in OXRAM by tailored metallic liner

Autori: N. Guillaume, M. Azzaz, S. Blonkowski, E. Jalaguier, P. Gonon, C. Vallée, T. Blomberg, M. Tuominen, H. Spreys, S. Bernasconi, C. Charpin-Nicolle, E. Nowak
Pubblicato in: SSDM2019, 2019
Editore: SSDM

Embedded Select in Trench Memory (eSTM), best in class 40nm floating gate based cell: a process integration challenge

Autori: S. Niel, F. La Rosa, A. Regnier, M. Mantelli, F. Trenteseaux, G. Ghezzi, A. Marzaki, Q. Hubert, J. Delalleau, T. Cabout, F. Maugain, E. Lepape, L. Baron, A. Champenois, D. Galpin, N. Cherault, S. Audran, L. Parmigiani, P. Gouraud, B. Duclaux, Y. Escarabajal, F. Baudin, E. Beche, B. Saidi, V. Arnal
Pubblicato in: 2018 IEEE International Electron Devices Meeting (IEDM), Numero 2018 IEEE International Electron Devices Meeting, 2018, Pagina/e 7.4.1-7.4.4, ISBN 978-1-7281-1987-8
Editore: IEEE
DOI: 10.1109/iedm.2018.8614517

Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory

Autori: F. Arnaud, P. Zuliani, J.P. Reynard, A. Gandolfo, F. Disegni, P. Mattavelli, E. Gomiero, G. Samanni, C. Jahan, R. Berthelon, O. Weber, E. Richard, V. Barral, A. Villaret, S. Kohler, J.C. Grenier, R. Ranica, C. Gallon, A. Souhaite, D. Ristoiu, L. Favennec, V. Caubet, S. Delmedico, N. Cherault, R. Beneyton, S. Chouteau, P.O. Sassoulas, A. Vernhet, Y. Le Friec, F. Domengie, L. Scotti, D. Pacelli, J.L
Pubblicato in: 2018 IEEE International Electron Devices Meeting (IEDM), Numero 2018 IEEE International Electron Devices Meeting, 2018, Pagina/e 18.4.1-18.4.4, ISBN 978-1-7281-1987-8
Editore: IEEE
DOI: 10.1109/iedm.2018.8614595

Optimized Reading Window for Crossbar Arrays Thanks to Ge-Se-Sb-N-based OTS Selectors

Autori: A. Verdy, M. Bernard, J. Garrione, G. Bourgeois, M. C. Cyrille, E. Nolot, N. Castellani, P. Noe, C. Socquet-Clerc, T. Magis, G. Sassine, G. Molas, G. Navarro, E. Nowak
Pubblicato in: 2018 IEEE International Electron Devices Meeting (IEDM), Numero IEDM, San Francisco, 2018, Pagina/e 37.4.1-37.4.4, ISBN 978-1-7281-1987-8
Editore: IEEE
DOI: 10.1109/iedm.2018.8614686

Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

Autori: D. Alfaro Robayo, G. Sassine, J. Minguet Lopez, L. Grenouillet, A. Verdy, G. Navarro, M. Bernard, E. Esmanhotto, C. Carabasse, E. Vianello, N. Castellani, L. Ciampolini, B. Giraud, C. Cagli, G. Guibaudo, E. Nowak, G. Molas
Pubblicato in: 2019
Editore: IEEE
DOI: 10.1109/iedm19573.2019.8993439

OxRAM for embedded solutions on advanced node: scaling perspectives considering statistical reliability and design constraints

Autori: J. Sandrini, M. Barlas, J. F. Nodin, O. Billoint, G. Molas, R. Fournel, E. Nowak, F. Gaillard, C. Cagli, L. Grenouillet, V. Meli, N. Castellani, I. Hammad, S. Bernasconi, F. Aussenac, S. Van Duijn, G. Audoit
Pubblicato in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Pagina/e 30.5.1-30.5.4, ISBN 978-1-7281-4032-2
Editore: IEEE
DOI: 10.1109/iedm19573.2019.8993484

Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory

Autori: G. Lama, M. Bernard, N. Bernier, G. Bourgeois, E. Nolot, N. Castellani, J. Garrione, M. C. Cyrille, G. Navarro, E. Nowak
Pubblicato in: 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, Pagina/e 1-6, ISBN 978-1-7281-6893-7
Editore: IEEE
DOI: 10.1109/irps46558.2021.9405116

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization

Autori: J. Minguet Lopez, L. Hudeley, L. Grenouillet, D. Alfaro Robayo, J. Sandrini, G. Navarro, M. Bernard, C. Carabasse, D. Deleruyelle, N. Castellani, M. Bocquet, J. M. Portal, E. Nowak, G. Molas
Pubblicato in: 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, Pagina/e 1-6, ISBN 978-1-7281-6893-7
Editore: IEEE
DOI: 10.1109/irps46558.2021.9405195

Temperature Dependent Study of Microstructure Evolution in HfO2 Based Memristive Devices (oral presentation)

Autori: R. Eilhardt, A. Zintler, O. Ricalde, S. Petzold, L. Alff, und L. Molina-Luna
Pubblicato in: 2019
Editore: MRS Fall 2019 (Boston)

Defect Engineering in Transition Metal Oxide-based Resistive Random Access Memory

Autori: Petzold, Stefan
Pubblicato in: Numero 2, 2020
Editore: Darmstadt, Technische Universität
DOI: 10.25534/tuprints-00011328

Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Autori: Jordi Suñé
Pubblicato in: 2020, ISBN 978-3-03928-576-1
Editore: MDPI

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