Advanced RF Transceivers for 5G base stations based on GaN Technology.

Informations projet

5G_GaN2

N° de convention de subvention: 783274

DOI

10.3030/783274

Projet clôturé

Date de signature de la CE 17 Mai 2018

Date de début 1 Juin 2018

Date de fin 31 Mai 2022

Financé au titre de

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coût total

€ 20 568 990,85

Contribution de l’UE

€ 5 988 277,67

Coordonné par

UNITED MONOLITHIC SEMICONDUCTORS SAS
France

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Livrables

Documents, reports (5)

Newsletter2

Newsletter 2

Project_Website

Project website

Newsletter_1

Newsletter 1.

WS_devices_appli

Workshop on devices and applications

Kit_school

Communication kit targeted towards middle school students

Other (2)

Project Video
WS_material_research

Workshop on material research

Publications

Conference proceedings (10)

Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

Auteurs: Jan Grünenpütt, Daniel Sommer, Jörg Splettstößer, Olof Kordina, Jr-Tai Chen, Hermann Stieglauer, Hervé Blanck
Publié dans: 2021 CS Mantech digest, 2021
Éditeur: "CS MANTECH 9450 SW Gemini Drive #26585 Beaverton, OR 97008"

Workshop on Highly Linear and Linearized Power Amplifiers for mm-Wave Communications: Innovative Integrated Solutions for mm-Wave 5G Front Ends, Combining 150nm GaN PA with GaAs Receiver

Auteurs: Mohammed Ayad, Pascal Poilvert, Houzefa Moulakarimdjy, Laurent Marechal, Philippe Auxemery
Publié dans: 2021 RFIC Virtual Technical Program | RFIC Symposium, 2021
Éditeur: RFIC IEEE

Reliability of Fan-Out Wafer Level Packaging For III-V RF Power MMICs

Auteurs: Ariane Tomas, Laurent Marechal, Rodrigo Almeida, Mehdy Neffati, Nathalie Malbert, Helene Fremont, Nathalie Labat, Arnaud Garnier
Publié dans: 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 2021, Page(s) 1779-1785, ISBN 978-1-6654-4097-4
Éditeur: IEEE
DOI: 10.1109/ectc32696.2021.00281

IDENTIFICATION OF ELECTRICALLY ACTIVE DEFECTSIN MODERN STRUCTURES BASED ON GALLIUM NITRIDE

Auteurs: J.Drobny, A.Kosa,M. Weis, J. Kovac, L. Stuchlikova
Publié dans: 2019, ISBN 978-80-7582-097-6
Éditeur: MITAV 2019

DLTFS Study of Defect Distribution in InAlGaN/GaN/SiC HEMT Heterostructures

Auteurs: L. Stuchlikova, J. Drobny, A. Kosa, P. Benko, A. Kopecky, S. L. Delage, J. Kovac
Publié dans: 2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 2018, Page(s) 1-4, ISBN 978-1-5386-7490-1
Éditeur: IEEE
DOI: 10.1109/asdam.2018.8544477

Heterogeneous Integration for WLP RF Transceivers : Challenges and Issues

Auteurs: Didier Floriot,Philippe Auxemery, Jean-Pierre Viaud
Publié dans: IMS2019 proceedings, 2019
Éditeur: IEEE MTT International Microwave Symposium

Analysis of Thermal Properties of Power Multifinger HEMT Devices

Auteurs: Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Luboš Černaj, Patrik Príbytný, Daniel Donoval, Jaroslav Kováč, Sylvain Laurent Delage, Jean-Claude Jacquet
Publié dans: ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 2018, ISBN 978-0-7918-5192-0
Éditeur: American Society of Mechanical Engineers
DOI: 10.1115/ipack2018-8256

Defect Analysis of InAlGaN/GaN/SiC HEMT heterostructures

Auteurs: L. Stuchlikova, J. Drobny, A. Kosa, J. Vadovsky, P. Benko, A. Skoda, J. Kovac, jr., S. L. Delage
Publié dans: wocsdice2019, 2019
Éditeur: wocsdice2019 : Workshop on Compound Semiconductor Devices and Integrated Circuits

"Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier"

Auteurs: Z. Gao, F. Chiocchetta, N. Modolo, C. De Santi, F. Rampazzo, M. Meneghini, G. Meneghesso, et al
Publié dans: 2022 IEEE International Reliability Physics Symposium, Numéro Pages P51-1–P51-6, 2022
Éditeur: IEEE Press
DOI: 10.1109/irps48227.2022.9764531

System in package embedding III-V chips by fan-out wafer-level packaging for RF applications

Auteurs: Arnaud Garnier, Laetitia Castagne, Florent Greco, Thomas Guillemet, Laurent Marechal, Mehdy Neffati, Remi Franiatte, Perceval Coudrain, Stephane Piotrowicz, Gilles Simon
Publié dans: 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 2021, Page(s) 2016-2023, ISBN 978-1-6654-4097-4
Éditeur: IEEE
DOI: 10.1109/ectc32696.2021.00318

Non-peer reviewed articles (2)

Failure physics and reliability of GaN-based HEMTs for microwave and millimeter-wave applications: a review of consolidated data and recent results

Auteurs: Enrico Zanoni, Fabiana Rampazzo, Carlo De Santi, Veronica Gao Zhan, Chandan Sharma, Nicola Modolo, Giovanni Verzellesi, Alessandro Chini, Gaudenzio Meneghesso, Matteo Meneghini
Publié dans: Physic Status Solid a, 2022, ISSN 1862-6319
Éditeur: Editor-in-Chief: Stefan Hildebrandt, Deputy Editor: Marc Zastrow Online ISSN: 1862-6319 © Wiley-VCH GmbH, Weinheim
DOI: 10.1002/pssa.202100722

5G GaN2 project developing 28GHz, 38GHz and 80GHz demonstrators for 5G cellular network base stations

Auteurs: Dirk Schwantuschke and al
Publié dans: Semiconductor Today, Numéro 18 September 2018, monthly journal, 2018, ISSN 1752-2935
Éditeur: Juno Publishing and Media Solutions Ltd, Suite no. 133, 20 Winchcombe Street, Cheltenham GL52 2LY, UK

Peer reviewed articles (8)

Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

Auteurs: Joël Kanyandekwe, Yannick Baines, Jérôme Richy, Sylvie Favier, Charles Leroux, Denis Blachier, Yann Mazel, Marc Veillerot, Jean-Paul Barnes, Mrad Mrad, Cindy Wiese, Matthew Charles
Publié dans: Journal of Crystal Growth, Numéro 515, 2019, Page(s) 48-52, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2019.03.007

Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

Auteurs: Z. Gao, M. Meneghini, F. Rampazzo, M. Rzin, C. De Santi, G. Meneghesso, E. Zanoni
Publié dans: Microelectronics Reliability, Numéro 100-101, 2019, Page(s) 113489, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2019.113489

Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

Auteurs: Z. Gao, F. Rampazzo, M. Meneghini, C. De Santi, F. Chiocchetta, D. Marcon, G. Meneghesso, E. Zanoni
Publié dans: Microelectronics Reliability, Numéro 114, 2020, Page(s) 113905, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2020.113905

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Auteurs: Martin Florovič, Róbert Szobolovszký, Jaroslav Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
Publié dans: Journal of Electrical Engineering, Numéro 69/5, 2018, Page(s) 390-394, ISSN 1339-309X
Éditeur: SCIENDO journal of electronical engineering
DOI: 10.2478/jee-2018-0057

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress

Auteurs: Zhan Gao, Fabiana Rampazzo, Matteo Meneghini, Nicola Modolo, Carlo De Santi, Hervé Blanck, Hermann Stieglauer, Daniel Sommer, Jan Grünenpütt, Olof Kordina, Jr-Tai Chen, Gaudenzio Meneghesso, Enrico Zanoni
Publié dans: Microelectronics Reliability, 2021, Page(s) 114318, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2021.114318

A 24–28-GHz Doherty Power Amplifier With 4-W Output Power and 32% PAE at 6-dB OPBO in 150-nm GaN Technology

Auteurs: Mingquan Bao, David Gustafsson, Rui Hou, Zineb Ouarch, Christophe Chang, Kristoffer Andersson
Publié dans: IEEE Microwave and Wireless Components Letters, Numéro 31/6, 2021, Page(s) 752-755, ISSN 1531-1309
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2021.3063868

Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

Auteurs: M Florovič, J Kováč, J Kováč, A Chvála, M Weis, J-C Jacquet, S L Delage
Publié dans: Semiconductor Science and Technology, Numéro 36/2, 2020, Page(s) 025019, ISSN 0268-1242
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6641/abd15a

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Auteurs: Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Ľuboš Černaj, Daniel Donoval, Jaroslav Kováč, Christian Dua, Sylvain L. Delage, Jean-Claude Jacquet
Publié dans: Journal of Electronic Packaging, Numéro 141/3, 2019, ISSN 1043-7398
Éditeur: ASME
DOI: 10.1115/1.4043477