Modeling critical reliability issues in VLSI technologies beyond 2020

Project Information

MoCRIV

Grant agreement ID: 794950

DOI

10.3030/794950

Project closed

EC signature date 28 March 2018

Start date 22 August 2018

End date 21 August 2020

Funded under

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Total cost

€ 172 800,00

EU contribution

€ 172 800,00

Coordinated by

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Belgium

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Peer reviewed articles (6)

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

Author(s): Alexander Makarov, Philippe Roussel, Erik Bury, Michiel Vandemaele, Alessio Spessot, Dimitri Linten, Ben Kaczer, Stanislav Tyaginov
Published in: Micromachines, Issue 11/7, 2020, Page(s) 657, ISSN 2072-666X
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi11070657

Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces

Author(s): M. Jech, A.-M. El-Sayed, S. Tyaginov, A. L. Shluger, T. Grasser
Published in: Physical Review B. v. 100, No. 19, p. 195302 (2019), 2019, ISSN 2469-9950
Publisher: APS
DOI: 10.1103/physrevb.100.195302

Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

Author(s): Alexander Makarov, Ben Kaczer, Adrian Chasin, Michiel Vandemaele, Erik Bury, Markus Jech, Alexander Grill, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Published in: IEEE Electron Device Letters, Issue 40/10, 2019, Page(s) 1579-1582, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2933729

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory

Author(s): M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser
Published in: IEEE Transactions on Electron Devices, v. 66, No. 1, pp. 241-248 (2019), 2019, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2873421

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

Author(s): Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Published in: IEEE Electron Device Letters, Issue 40/6, 2019, Page(s) 870-873, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2913625

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full { V G , V D } Bias Space: Implications and Peculiarities

Author(s): Markus Jech, Gunnar Rott, Hans Reisinger, Stanislav Tyaginov, Gerhard Rzepa, Alexander Grill, Dominic Jabs, Christoph Jungemann, Michael Waltl, Tibor Grasser
Published in: IEEE Transactions on Electron Devices, Issue 67/8, 2020, Page(s) 3315-3322, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3000749

Conference proceedings (12)

Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs

Author(s): S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer
Published in: Proc. International Conference on Solid State Devices and Materials (SSDM-2019), 2019, Page(s) pp. 565 - 566
Publisher: Japan Society of Applied Physics

A Compact Physics Analytical Model for Hot-Carrier Degradation

Author(s): Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
Published in: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Page(s) 1-7, ISBN 978-1-7281-3199-3
Publisher: IEEE
DOI: 10.1109/irps45951.2020.9128327

Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

Author(s): A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov
Published in: Proc. International Conference on Solid State Devices and Materials (SSDM-2019), 2019, Page(s) pp. 609 – 610
Publisher: Japan Society of Applied Physics

Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Author(s): Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
Published in: 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, Page(s) 1-7, ISBN 978-1-5386-9504-3
Publisher: IEEE
DOI: 10.1109/irps.2019.8720406

Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs

Author(s): Michiel Vandemaele, Ben Kaczer, Zlatan Stanojevic, Stanislav Tyaginov, Alexander Makarov, Adrian Chasin, Hans Mertens, Dimitri Linten, Guido Groeseneken
Published in: 2018 International Integrated Reliability Workshop (IIRW), 2018, Page(s) 1-4, ISBN 978-1-5386-6039-3
Publisher: IEEE
DOI: 10.1109/iirw.2018.8727081

Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

Author(s): S. Tyaginov, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer, A.-M. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 21.3.1-21.3.4, ISBN 978-1-7281-4032-2
Publisher: IEEE
DOI: 10.1109/iedm19573.2019.8993644

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Author(s): A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu
Published in: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Page(s) 1-6, ISBN 978-1-7281-3199-3
Publisher: IEEE
DOI: 10.1109/irps45951.2020.9128316

On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability

Author(s): A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. Tyaginov
Published in: Proc. International Integrated Reliability Workshop (IIRW-2019), pp. 1-4, 2019
Publisher: IEEE
DOI: 10.1109/iirw47491.2019.8989882

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation

Author(s): Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
Published in: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Page(s) 1-7, ISBN 978-1-7281-3199-3
Publisher: IEEE
DOI: 10.1109/irps45951.2020.9128218

First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

Author(s): M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 24.1.1-24.1.4, ISBN 978-1-7281-4032-2
Publisher: IEEE
DOI: 10.1109/iedm19573.2019.8993630

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

Author(s): A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill1, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. Tyaginov
Published in: Proc. International Reliability Physics Symposium (IRPS-2019), 2019, Page(s) p. 6С.2
Publisher: IEEE
DOI: 10.1109/irps.2019.8720584

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

Author(s): Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
Published in: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Page(s) 262-265, ISBN 978-1-7281-1539-9
Publisher: IEEE
DOI: 10.1109/essderc.2019.8901721