Modeling critical reliability issues in VLSI technologies beyond 2020

Informazioni relative al progetto

MoCRIV

ID dell’accordo di sovvenzione: 794950

DOI

10.3030/794950

Progetto chiuso

Data della firma CE 28 Marzo 2018

Data di avvio 22 Agosto 2018

Data di completamento 21 Agosto 2020

Finanziato da

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Costo totale

€ 172 800,00

Contributo UE

€ 172 800,00

Coordinato da

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Belgium

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Peer reviewed articles (6)

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

Autori: Alexander Makarov, Philippe Roussel, Erik Bury, Michiel Vandemaele, Alessio Spessot, Dimitri Linten, Ben Kaczer, Stanislav Tyaginov
Pubblicato in: Micromachines, Numero 11/7, 2020, Pagina/e 657, ISSN 2072-666X
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi11070657

Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces

Autori: M. Jech, A.-M. El-Sayed, S. Tyaginov, A. L. Shluger, T. Grasser
Pubblicato in: Physical Review B. v. 100, No. 19, p. 195302 (2019), 2019, ISSN 2469-9950
Editore: APS
DOI: 10.1103/physrevb.100.195302

Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

Autori: Alexander Makarov, Ben Kaczer, Adrian Chasin, Michiel Vandemaele, Erik Bury, Markus Jech, Alexander Grill, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Pubblicato in: IEEE Electron Device Letters, Numero 40/10, 2019, Pagina/e 1579-1582, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2933729

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory

Autori: M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser
Pubblicato in: IEEE Transactions on Electron Devices, v. 66, No. 1, pp. 241-248 (2019), 2019, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2873421

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

Autori: Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Pubblicato in: IEEE Electron Device Letters, Numero 40/6, 2019, Pagina/e 870-873, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2913625

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full { V G , V D } Bias Space: Implications and Peculiarities

Autori: Markus Jech, Gunnar Rott, Hans Reisinger, Stanislav Tyaginov, Gerhard Rzepa, Alexander Grill, Dominic Jabs, Christoph Jungemann, Michael Waltl, Tibor Grasser
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/8, 2020, Pagina/e 3315-3322, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3000749

Conference proceedings (12)

Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs

Autori: S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer
Pubblicato in: Proc. International Conference on Solid State Devices and Materials (SSDM-2019), 2019, Pagina/e pp. 565 - 566
Editore: Japan Society of Applied Physics

A Compact Physics Analytical Model for Hot-Carrier Degradation

Autori: Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
Pubblicato in: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Pagina/e 1-7, ISBN 978-1-7281-3199-3
Editore: IEEE
DOI: 10.1109/irps45951.2020.9128327

Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

Autori: A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov
Pubblicato in: Proc. International Conference on Solid State Devices and Materials (SSDM-2019), 2019, Pagina/e pp. 609 – 610
Editore: Japan Society of Applied Physics

Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Autori: Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
Pubblicato in: 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, Pagina/e 1-7, ISBN 978-1-5386-9504-3
Editore: IEEE
DOI: 10.1109/irps.2019.8720406

Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs

Autori: Michiel Vandemaele, Ben Kaczer, Zlatan Stanojevic, Stanislav Tyaginov, Alexander Makarov, Adrian Chasin, Hans Mertens, Dimitri Linten, Guido Groeseneken
Pubblicato in: 2018 International Integrated Reliability Workshop (IIRW), 2018, Pagina/e 1-4, ISBN 978-1-5386-6039-3
Editore: IEEE
DOI: 10.1109/iirw.2018.8727081

Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

Autori: S. Tyaginov, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer, A.-M. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters
Pubblicato in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Pagina/e 21.3.1-21.3.4, ISBN 978-1-7281-4032-2
Editore: IEEE
DOI: 10.1109/iedm19573.2019.8993644

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Autori: A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu
Pubblicato in: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Pagina/e 1-6, ISBN 978-1-7281-3199-3
Editore: IEEE
DOI: 10.1109/irps45951.2020.9128316

On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability

Autori: A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. Tyaginov
Pubblicato in: Proc. International Integrated Reliability Workshop (IIRW-2019), pp. 1-4, 2019
Editore: IEEE
DOI: 10.1109/iirw47491.2019.8989882

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation

Autori: Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
Pubblicato in: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Pagina/e 1-7, ISBN 978-1-7281-3199-3
Editore: IEEE
DOI: 10.1109/irps45951.2020.9128218

First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

Autori: M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser
Pubblicato in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Pagina/e 24.1.1-24.1.4, ISBN 978-1-7281-4032-2
Editore: IEEE
DOI: 10.1109/iedm19573.2019.8993630

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

Autori: A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill1, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. Tyaginov
Pubblicato in: Proc. International Reliability Physics Symposium (IRPS-2019), 2019, Pagina/e p. 6С.2
Editore: IEEE
DOI: 10.1109/irps.2019.8720584

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

Autori: Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
Pubblicato in: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Pagina/e 262-265, ISBN 978-1-7281-1539-9
Editore: IEEE
DOI: 10.1109/essderc.2019.8901721