Quantum Engineering for Machine Learning

Project Information

QUEFORMAL

Grant agreement ID: 829035

DOI 10.3030/829035

Project closed

EC signature date 18 December 2018

Start date 1 January 2019

End date 31 December 2022

Funded under

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Total cost € 2 988 740,00

EU contribution € 2 988 740,00

Coordinated by

UNIVERSITA DI PISA
Italy

Deliverables

Documents, reports (11)

Fabrication and characterization of second gen. LVH-NVMs

Fabrication and characterization of second gen LVHNVMs

Final report on modeling, technology benchmarking and potential for exploitation

Final report on modeling technology benchmarking and potential for exploitation

Final Report

Final report including report on communication exploitation and dissemination

Fabrication and characterization of first gen. LVH-NVMs

Fabrication and characterization of first gen LVHNVMs

Fabrication and characterization of second gen. LH-FETs

Fabrication and characterization of second gen LHFETs

Modeling of 1st generation LH-FETs and LVH-NVMs
Electrical parameters and Wannier Hamiltonian of LH of TDMCs
Modeling of 2nd generation LH-FETs and LVH-NVMs

Modeling of 2nd generation LHFETs and LVHNVMs also a public version of the deliverable will be available

Multiscale modeling of device building blocks with candidate heterostructures
Fabrication and characterization of first gen. LH-FETs

Fabrication and characterization of first gen LHFETs

Second Annual Report

Second annual report (including dissemination, exploitation and communication report)

Other (1)

Launch of intranet project collaboration tool

Open Research Data Pilot (1)

Data Management Plan

Data Management Plan suitable for ORDP: Open Research Data Pilot

Websites, patent fillings, videos etc. (5)

Project public launch

presentation, visual identity, website, video, social media

Second dissemination and communication campaign

Second dissemination and communication campaign Concentrated actions of press releases press kits video articles sent to science and tech magazineswebsites

First Research/Industry Workshop

First ResearchIndustry Workshop

First Dissemination and Communication Campaign

First Dissemination and Communication Campaign: Concentrated actions of press releases, press kits, video, articles sent to science and tech magazines/websites

Second Research-Industry Workshop

Second ResearchIndustry Workshop

Publications

Peer reviewed articles (43)

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Author(s): Y. Zhao, M. Tripathi, K. Čerņevičs, A. Avsar, H.G. Yi, J.F. Gonzalez Marin, C.-Y. Cheon, Z. Wang, O.V. Yazyev, A. Kis
Published in: Nature Communication, 2023, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-022-35651-1

Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Author(s): D. Logoteta, J. Cao, M. Pala, P. Dollfus, Y. Lee, G. Iannaccone
Published in: Physical Review Research, Issue 2/4, 2020, ISSN 2643-1564
Publisher: APS Physics
DOI: 10.1103/physrevresearch.2.043286

Rapid and Large-Area Visualization of Grain Boundaries in MoS 2 on SiO 2 Using Vapor Hydrofluoric Acid

Author(s): Xuge Fan, Rita Siris, Oliver Hartwig, Georg S. Duesberg, Frank Niklaus
Published in: ACS Applied Materials & Interfaces, Issue 12/30, 2020, Page(s) 34049-34057, ISSN 1944-8244
Publisher: American Chemical Society
DOI: 10.1021/acsami.0c06910

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based Plasticity

Author(s): Melkamu Belete, Satender Kataria, Aykut Turfanda, Sam Vaziri, Thorsten Wahlbrink, Olof Engström, Max C. Lemme
Published in: Advanced Electronic Materials, Issue 6/3, 2020, Page(s) 1900892, ISSN 2199-160X
Publisher: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.201900892

Defect Engineering of Two‐Dimensional Molybdenum Disulfide

Author(s): Xin Chen, Peter Denninger, Tanja Stimpel‐Lindner, Erdmann Spiecker, Georg S. Duesberg, Claudia Backes, Kathrin C. Knirsch, Andreas Hirsch
Published in: Chemistry – A European Journal, Issue 26/29, 2020, Page(s) 6535-6544, ISSN 0947-6539
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/chem.202000286

Substitutional p-Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD

Author(s): Zhenyu Wang, Mukesh Tripathi, Zahra Golsanamlou, Poonam Kumari, Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta, Gianluca Fiori, Luca Sementa, Guilherme Migliato Marega, Hyun Goo Ji, Yanfei Zhao, Aleksandra Radenovic, Giuseppe Iannaccone, Alessandro Fortunelli, and Andras Kis
Published in: Advanced Materials, 2023, ISSN 1521-4095
Publisher: Wiley
DOI: 10.1002/adma.202209371

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

Author(s): Kuanysh Zhussupbekov, Conor P. Cullen, Ainur Zhussupbekova, Igor V. Shvets, Georg S. Duesberg, Niall McEvoy, Cormac Ó Coileáin
Published in: RSC Advances, Issue 10/69, 2020, Page(s) 42001-42007, ISSN 2046-2069
Publisher: Royal Society of Chemistry
DOI: 10.1039/d0ra07405e

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Author(s): G. Migliato Marega, Z. Wang, M. Paliy, G. Giusi, S. Strangio, F. Castiglione, C. Callegari, M. Tripathi, A. Radenovic, G. Iannaccone A. Kis,
Published in: ACS Nano, 2022, ISSN 1936-0851
Publisher: American Chemical Society
DOI: 10.1021/acsnano.1c07065

Logic-in-memory based on an atomically thin semiconductor

Author(s): Guilherme Migliato Marega, Yanfei Zhao, Ahmet Avsar, Zhenyu Wang, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis
Published in: Nature, Issue 587/7832, 2020, Page(s) 72-77, ISSN 0028-0836
Publisher: Nature Publishing Group
DOI: 10.1038/s41586-020-2861-0

Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS

Author(s): Tommaso Rizzo; Sebastiano Strangio; Giuseppe Iannaccone
Published in: IEEE Access, Issue 15, 2022, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2022.3172488

Highly Selective Non‐Covalent On‐Chip Functionalization of Layered Materials

Author(s): R. Tilmann, C. Weiß, C. P. Cullen, L. Peters, O. Hartwig, L. Höltgen, T. Stimpel-Lindner, K. C. Knirsch, N. McEvoy, A. Hirsch, G. S. Duesberg
Published in: Advanced Electronic Materials, 2021, ISSN 2199-160X
Publisher: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.202000564

Theoretical Analysis of a 2D Metallic/Semiconducting Transition‐Metal Dichalcogenide NbS 2 //WSe 2 Hybrid Interface

Author(s): Zahra Golsanamlou, Luca Sementa, Teresa Cusati, Giuseppe Iannaccone, Alessandro Fortunelli
Published in: Advanced Theory and Simulations, Issue 3/12, 2020, Page(s) 2000164, ISSN 2513-0390
Publisher: Wiley
DOI: 10.1002/adts.202000164

Covalent Patterning of 2D MoS2

Author(s): X. Chen, M. Kohring, M. Assebban, B. Tywoniuk, C. Bartlam, N. M. Badlyan, J. Maultzsch, G. S. Duesberg, H. B. Weber, K. C. Knirsch, A. Hirsch
Published in: Chemistry A European Journal, 2021, ISSN 1521-3765
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/chem.202102021

Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

Author(s): Z. Wang, C.-Y. Cheon, M. Tripathi, G. Migliato Marega, Y. Zhao, H. Goo Ji, M. Macha, A. Radenovic, A. Kis
Published in: ACS Nano, 2021, ISSN 1936-0851
Publisher: American Chemical Society
DOI: 10.1021/acsnano.1c07956

Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces

Author(s): Calogero, Gaetano; Marian, Damiano; Marin, Enrique G.; Fiori, Gianluca; Iannaccone, Giuseppe
Published in: Scientific Report, Issue 14, 2021, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-021-98080-y

Vertical Heterostructures between Transition-Metal Dichalcogenides—A Theoretical Analysis of the NbS2/WSe2 Junction

Author(s): Z. Golsanamlou, P. Kumari, L. Sementa, T. Cusati, G. Iannaccone, A. Fortunelli
Published in: Advanced Electronics Materials, 2022, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/aelm.202200020

Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

Author(s): M. Prechtl, S. Parhizkar, O. Hartwig, K. Lee, J. Biba, T. Stimpel-Lindner, F. Gity, A. Schels, J. Bolten, S. Suckow, A. L. Giesecke, M. C. Lemme, G. S. Duesberg
Published in: Advanced Functional Materials, 2021, ISSN 1616-3028
Publisher: Wiley
DOI: 10.1002/adfm.202103936

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Author(s): S. Lukas, O. Hartwig, M. Prechtl, G. Capraro, J. Bolten, A. Meledin, J. Mayer, D. Neumaier, S. Kataria, G. S. Duesberg, M. C. Lemme
Published in: Advanced Functional Materials, 2021, ISSN 1616-3028
Publisher: Wiley
DOI: 10.1002/adfm.202102929

Stable Al2O3 encapsulation of MoS2-FETs enabled by CVD Grown h-BN

Author(s): A.Piacentini, D. Marian, D. S. Schneider, E.G. Marin, Z. Wang, M. Otto, B. Canto, A. Radenovic, A. Kis, G. Fiori, M.C. Lemme, D. Neumaier
Published in: Advanced Electronic Materials, 2022, ISSN 2199-160X
Publisher: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.202200123

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Author(s): C. P. Cullen, C. Ó Coileáin, J. B. McManus, O. Hartwig, D. McCloskey, G. S. Duesberg, N. McEvoy
Published in: Nanoscale, 2021, ISSN 2040-3372
Publisher: Royas Society of Chemistry
DOI: 10.1039/d0nr06197b

Insulators for 2D nanoelectronics: the gap to bridge

Author(s): Yury Yu. Illarionov, Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz, Tibor Grasser
Published in: Nature Communications, Issue 11/1, 2020, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-020-16640-8

Ballistic two-dimensional lateral heterojunction bipolar transistor

Author(s): Leonardo Lucchesi; Gaetano Calogero; Gianluca Fiori; Giuseppe Iannaccone
Published in: Physical Review Research, Issue 5, 2021, ISSN 2643-1564
Publisher: APS
DOI: 10.1103/physrevresearch.3.023158

Probing the impact of Tribolayers on Enhanced Wear Resistance Behaviour of Carbon-Rich Molybdenum-Based Coatings

Author(s): D. D. Kumar, S. Hazra, K. Panda, P. Kuppusami, T. Stimpel-Lindner, G. S. Duesberg
Published in: ACS Applied Materials & Interfaces, 2022, ISSN 1944-8244
Publisher: American Chemical Society
DOI: 10.1021/acsami.2c03043

A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Author(s): Demetrio Logoteta, Marco G. Pala, Jean Choukroun, Philippe Dollfus, Giuseppe Iannaccone
Published in: IEEE Electron Device Letters, Issue 40/9, 2019, Page(s) 1550-1553, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2928131

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

Author(s): E. Reato, P. Palacios, B. Uzlu, M. Saeed, A. Grundmann, Z. Wang, D. S. Schneider, Z. Wang, M. Heuken, H. Kalisch, A. Vescan, A. Radenovic, A. Kis, D. Neumaier, R. Negra, M. C. Lemme
Published in: Advanced Materials, 2022, ISSN 1521-4095
Publisher: WILEY
DOI: 10.1002/adma.202108469

Multiscale Pseudoatomistic Quantum Transport Modeling for van der Waals Heterostructures

Author(s): G. Lovarelli, G. Calogero, G. Fiori, G. Iannaccone
Published in: Physical Review Applied, 2022, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.18.034045

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS 2

Author(s): Daniel S. Schneider, Annika Grundmann, Andreas Bablich, Vikram Passi, Satender Kataria, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Max C. Lemme
Published in: ACS Photonics, Issue 7/6, 2020, Page(s) 1388-1395, ISSN 2330-4022
Publisher: American Chemical Society
DOI: 10.1021/acsphotonics.0c00361

Spectroscopic thickness and quality metrics for PtSe2 layers produced by top-down and bottom-up techniques

Author(s): B. M. Szydłowska, O. Hartwig, B. Tywoniuk, T. Hartman, T. Stimpel-Lindner, Z. Sofer, N. McEvoy, G. S. Duesberg, C. Backes
Published in: 2D Materials, 2020, ISSN 2053-1583
Publisher: IOP Publishing
DOI: 10.1088/2053-1583/aba9a0

How to report and benchmark emerging field-effect transistors

Author(s): Zhihui Cheng; Chin-Sheng Pang; Peiqi Wang; Son T. Le; Yanqing Wu; Davood Shahrjerdi; Iuliana Radu; Max C. Lemme; Lian-Mao Peng; Xiangfeng Duan; Zhihong Chen; Joerg Appenzeller; Steven J. Koester; Eric Pop; Aaron D. Franklin; Curt A. Richter
Published in: Nature electronics, Issue 30, 2022, ISSN 2520-1131
Publisher: Nature Publishing Group
DOI: 10.48550/arxiv.2203.16759

Analog Vector-Matrix Multiplier Based on Programmable Current Mirrors for Neural Network Integrated Circuits

Author(s): Maksym Paliy, Sebastiano Strangio, Piero Ruiu, Tommaso Rizzo, Giuseppe Iannaccone
Published in: IEEE Access, Issue 8, 2020, Page(s) 203525-203537, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3037017

Borophenes made easy

Author(s): M. G. Cuxart, K. Seufert, V. Chesnyak, W. A. Waqas, A. Robert, M.-L. Bocquet, G. S. Duesberg, H. Sachdev, W. Auwärter
Published in: Science Advances, 2021, ISSN 2375-2548
Publisher: AAAS
DOI: 10.1126/sciadv.abk1490

Assessment of Two-Dimensional Materials-based technology for Analog Neural Networks

Author(s): M. Paliy, S. Strangio, P. Ruiu, G. Iannaccone
Published in: IEEE J. Explor. Solid-State Comp. Dev. Circuits, 2021, ISSN 2329-9231
Publisher: IEEE
DOI: 10.1109/jxcdc.2021.3121534

Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators

Author(s): Sajedeh Manzeli, Dumitru Dumcenco, Guilherme Migliato Marega, Andras Kis
Published in: Nature Communications, Issue 10/1, 2019, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-019-12795-1

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Author(s): Enrique G. Marin, Damiano Marian, Marta Perucchini, Gianluca Fiori, Giuseppe Iannaccone
Published in: ACS Nano, Issue 14/2, 2020, Page(s) 1982-1989, ISSN 1936-0851
Publisher: American Chemical Society
DOI: 10.1021/acsnano.9b08489

All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification

Author(s): B. Zambrano, S. Strangio, T. Rizzo, E. Garzón, M. Lanuzza, G. Iannaccone
Published in: IEEE Access, 2022, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2022.3203394

Electron Transport across Vertical Silicon/MoS 2 /Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Author(s): Melkamu Belete, Olof Engström, Sam Vaziri, Gunther Lippert, Mindaugas Lukosius, Satender Kataria, Max C. Lemme
Published in: ACS Applied Materials & Interfaces, Issue 12/8, 2020, Page(s) 9656-9663, ISSN 1944-8244
Publisher: American Chemical Society
DOI: 10.1021/acsami.9b21691

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Author(s): Zhenxing Wang; Andreas Hemmetter; Burkay Uzlu; Mohamed Saeed; Ahmed Hamed; Satender Kataria; Renato Negra; Daniel Neumaier; Max C. Lemme
Published in: Advanced electronic materials 7(7), 2001210 (2021). doi:10.1002/aelm.202001210, Issue 32, 2021, ISSN 2199-160X
Publisher: Wiley
DOI: 10.18154/rwth-2021-03740

2D oxides on metal materials: concepts, status, and perspectives

Author(s): Giovanni Barcaro, Alessandro Fortunelli
Published in: Physical Chemistry Chemical Physics, Issue 21/22, 2019, Page(s) 11510-11536, ISSN 1463-9076
Publisher: Royal Society of Chemistry
DOI: 10.1039/c9cp00972h

2D materials for future heterogeneous electronics

Author(s): M. C. Lemme, D. Akinwande, C. Huyghebaert, C. Stampfer
Published in: Nature Communication, 2022, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-022-29001-4

Graphene-Based Microwave Circuits: A Review

Author(s): M. Saeed, P. Palacios, M.-D. Wei, E. Baskent, C.-Y. Fan, B. Uzlu, K.-T. Wang, A. Hemmetter, Z. Wang, D. Neumaier, M. C. Lemme, R. Negra
Published in: Advanced Materials, 2022, ISSN 1521-4095
Publisher: Wiley
DOI: 10.1002/adma.202108473

Hydrogenation of diamond nanowire surfaces for effective electrostatic charge storage

Author(s): K. Panda, J.-E. Kim, K. J. Sankaran, I-N. Lin, K. Haenen, G. S. Duesberg, J. Y. Park
Published in: Nanoscale, 2021, ISSN 2040-3372
Publisher: Royal Society of Chemistry
DOI: 10.1039/d1nr00189b

Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons

Author(s): Damiano Marian, Enrique G. Marin, Giuseppe Iannaccone, Gianluca Fiori
Published in: Physical Review Applied, Issue 14/6, 2020, ISSN 2331-7019
Publisher: APS
DOI: 10.1103/PhysRevApplied.14.064019

Covalent Bisfunctionalization of Two‐Dimensional Molybdenum Disulfide

Author(s): X. Chen, C. Bartlam, V. Lloret, N. M. Badlyan, S. Wolff, R. Gillen, T. Stimpel-Lindner, J. Maultzsch, G. S. Duesberg, K. C. Knirsch, A. Hirsch
Published in: Angew. Chem. Int., 2021, ISSN 1433-7851
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/anie.202103353

Other (1)

Three-dimensional printing of silica-glass structures with submicrometric features

Author(s): Laakso, Miku; Huang, Po-Han; Edinger, Pierre; Hartwig, Oliver; Duesberg, Georg S.; Errando-Herranz, Carlos; Stemme, Göran; Gylfason, Kristinn B.; Niklaus, Frank
Published in: Issue 6, 2020
Publisher: arXiv

Conference proceedings (2)

MoS2/Quantum Dot Hybrid Photodetectors on Flexible Substrates

Author(s): O. Yakar, B. Uzlu, D. S. Schneider, A. Grundmann, S. Becker, J. S. Niehaus, H. Schlicke, M. Heuken, H. Kalisch, A. Vescan, Z. Wang, M. C. Lemme
Published in: 2022 Device Research Conference (DRC), 2022
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/drc55272.2022.9855791

Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors

Author(s): D. Braun, S. Lukas, L. Völkel, O. Hartwig, M. Prechtl, M. Belete, S. Kataria, T. Wahlbrink, A. Daus, G. S. Duesberg, and M. C. Lemme
Published in: 2022 Device Research Conference (DRC), 2022
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/drc55272.2022.9855787