Quantum Engineering for Machine Learning

Rezultaty

Fabrication and characterization of second gen. LVH-NVMs

Fabrication and characterization of second gen LVHNVMs

Final report on modeling, technology benchmarking and potential for exploitation

Final report on modeling technology benchmarking and potential for exploitation

Final Report

Final report including report on communication exploitation and dissemination

Fabrication and characterization of first gen. LVH-NVMs

Fabrication and characterization of first gen LVHNVMs

Fabrication and characterization of second gen. LH-FETs

Fabrication and characterization of second gen LHFETs

Modeling of 1st generation LH-FETs and LVH-NVMs
Electrical parameters and Wannier Hamiltonian of LH of TDMCs
Modeling of 2nd generation LH-FETs and LVH-NVMs

Modeling of 2nd generation LHFETs and LVHNVMs also a public version of the deliverable will be available

Multiscale modeling of device building blocks with candidate heterostructures
Fabrication and characterization of first gen. LH-FETs

Fabrication and characterization of first gen LHFETs

Second Annual Report

Second annual report (including dissemination, exploitation and communication report)

Launch of intranet project collaboration tool

Data Management Plan

Data Management Plan suitable for ORDP: Open Research Data Pilot

Project public launch

presentation, visual identity, website, video, social media

Second dissemination and communication campaign

Second dissemination and communication campaign Concentrated actions of press releases press kits video articles sent to science and tech magazineswebsites

First Research/Industry Workshop

First ResearchIndustry Workshop

First Dissemination and Communication Campaign

First Dissemination and Communication Campaign: Concentrated actions of press releases, press kits, video, articles sent to science and tech magazines/websites

Second Research-Industry Workshop

Second ResearchIndustry Workshop

Publikacje

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Autorzy: Y. Zhao, M. Tripathi, K. Čerņevičs, A. Avsar, H.G. Yi, J.F. Gonzalez Marin, C.-Y. Cheon, Z. Wang, O.V. Yazyev, A. Kis
Opublikowane w: Nature Communication, 2023, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-022-35651-1

Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Autorzy: D. Logoteta, J. Cao, M. Pala, P. Dollfus, Y. Lee, G. Iannaccone
Opublikowane w: Physical Review Research, Numer 2/4, 2020, ISSN 2643-1564
Wydawca: APS Physics
DOI: 10.1103/physrevresearch.2.043286

Rapid and Large-Area Visualization of Grain Boundaries in MoS 2 on SiO 2 Using Vapor Hydrofluoric Acid

Autorzy: Xuge Fan, Rita Siris, Oliver Hartwig, Georg S. Duesberg, Frank Niklaus
Opublikowane w: ACS Applied Materials & Interfaces, Numer 12/30, 2020, Strona(/y) 34049-34057, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.0c06910

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based Plasticity

Autorzy: Melkamu Belete, Satender Kataria, Aykut Turfanda, Sam Vaziri, Thorsten Wahlbrink, Olof Engström, Max C. Lemme
Opublikowane w: Advanced Electronic Materials, Numer 6/3, 2020, Strona(/y) 1900892, ISSN 2199-160X
Wydawca: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.201900892

Defect Engineering of Two‐Dimensional Molybdenum Disulfide

Autorzy: Xin Chen, Peter Denninger, Tanja Stimpel‐Lindner, Erdmann Spiecker, Georg S. Duesberg, Claudia Backes, Kathrin C. Knirsch, Andreas Hirsch
Opublikowane w: Chemistry – A European Journal, Numer 26/29, 2020, Strona(/y) 6535-6544, ISSN 0947-6539
Wydawca: John Wiley & Sons Ltd.
DOI: 10.1002/chem.202000286

Substitutional p-Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD

Autorzy: Zhenyu Wang, Mukesh Tripathi, Zahra Golsanamlou, Poonam Kumari, Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta, Gianluca Fiori, Luca Sementa, Guilherme Migliato Marega, Hyun Goo Ji, Yanfei Zhao, Aleksandra Radenovic, Giuseppe Iannaccone, Alessandro Fortunelli, and Andras Kis
Opublikowane w: Advanced Materials, 2023, ISSN 1521-4095
Wydawca: Wiley
DOI: 10.1002/adma.202209371

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

Autorzy: Kuanysh Zhussupbekov, Conor P. Cullen, Ainur Zhussupbekova, Igor V. Shvets, Georg S. Duesberg, Niall McEvoy, Cormac Ó Coileáin
Opublikowane w: RSC Advances, Numer 10/69, 2020, Strona(/y) 42001-42007, ISSN 2046-2069
Wydawca: Royal Society of Chemistry
DOI: 10.1039/d0ra07405e

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Autorzy: G. Migliato Marega, Z. Wang, M. Paliy, G. Giusi, S. Strangio, F. Castiglione, C. Callegari, M. Tripathi, A. Radenovic, G. Iannaccone A. Kis,
Opublikowane w: ACS Nano, 2022, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.1c07065

Logic-in-memory based on an atomically thin semiconductor

Autorzy: Guilherme Migliato Marega, Yanfei Zhao, Ahmet Avsar, Zhenyu Wang, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis
Opublikowane w: Nature, Numer 587/7832, 2020, Strona(/y) 72-77, ISSN 0028-0836
Wydawca: Nature Publishing Group
DOI: 10.1038/s41586-020-2861-0

Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS

Autorzy: Tommaso Rizzo; Sebastiano Strangio; Giuseppe Iannaccone
Opublikowane w: IEEE Access, Numer 15, 2022, ISSN 2169-3536
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2022.3172488

Highly Selective Non‐Covalent On‐Chip Functionalization of Layered Materials

Autorzy: R. Tilmann, C. Weiß, C. P. Cullen, L. Peters, O. Hartwig, L. Höltgen, T. Stimpel-Lindner, K. C. Knirsch, N. McEvoy, A. Hirsch, G. S. Duesberg
Opublikowane w: Advanced Electronic Materials, 2021, ISSN 2199-160X
Wydawca: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.202000564

Theoretical Analysis of a 2D Metallic/Semiconducting Transition‐Metal Dichalcogenide NbS 2 //WSe 2 Hybrid Interface

Autorzy: Zahra Golsanamlou, Luca Sementa, Teresa Cusati, Giuseppe Iannaccone, Alessandro Fortunelli
Opublikowane w: Advanced Theory and Simulations, Numer 3/12, 2020, Strona(/y) 2000164, ISSN 2513-0390
Wydawca: Wiley
DOI: 10.1002/adts.202000164

Covalent Patterning of 2D MoS2

Autorzy: X. Chen, M. Kohring, M. Assebban, B. Tywoniuk, C. Bartlam, N. M. Badlyan, J. Maultzsch, G. S. Duesberg, H. B. Weber, K. C. Knirsch, A. Hirsch
Opublikowane w: Chemistry A European Journal, 2021, ISSN 1521-3765
Wydawca: John Wiley & Sons Ltd.
DOI: 10.1002/chem.202102021

Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

Autorzy: Z. Wang, C.-Y. Cheon, M. Tripathi, G. Migliato Marega, Y. Zhao, H. Goo Ji, M. Macha, A. Radenovic, A. Kis
Opublikowane w: ACS Nano, 2021, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.1c07956

Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces

Autorzy: Calogero, Gaetano; Marian, Damiano; Marin, Enrique G.; Fiori, Gianluca; Iannaccone, Giuseppe
Opublikowane w: Scientific Report, Numer 14, 2021, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/s41598-021-98080-y

Vertical Heterostructures between Transition-Metal Dichalcogenides—A Theoretical Analysis of the NbS2/WSe2 Junction

Autorzy: Z. Golsanamlou, P. Kumari, L. Sementa, T. Cusati, G. Iannaccone, A. Fortunelli
Opublikowane w: Advanced Electronics Materials, 2022, ISSN 2199-160X
Wydawca: Wiley
DOI: 10.1002/aelm.202200020

Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

Autorzy: M. Prechtl, S. Parhizkar, O. Hartwig, K. Lee, J. Biba, T. Stimpel-Lindner, F. Gity, A. Schels, J. Bolten, S. Suckow, A. L. Giesecke, M. C. Lemme, G. S. Duesberg
Opublikowane w: Advanced Functional Materials, 2021, ISSN 1616-3028
Wydawca: Wiley
DOI: 10.1002/adfm.202103936

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Autorzy: S. Lukas, O. Hartwig, M. Prechtl, G. Capraro, J. Bolten, A. Meledin, J. Mayer, D. Neumaier, S. Kataria, G. S. Duesberg, M. C. Lemme
Opublikowane w: Advanced Functional Materials, 2021, ISSN 1616-3028
Wydawca: Wiley
DOI: 10.1002/adfm.202102929

Stable Al2O3 encapsulation of MoS2-FETs enabled by CVD Grown h-BN

Autorzy: A.Piacentini, D. Marian, D. S. Schneider, E.G. Marin, Z. Wang, M. Otto, B. Canto, A. Radenovic, A. Kis, G. Fiori, M.C. Lemme, D. Neumaier
Opublikowane w: Advanced Electronic Materials, 2022, ISSN 2199-160X
Wydawca: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.202200123

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Autorzy: C. P. Cullen, C. Ó Coileáin, J. B. McManus, O. Hartwig, D. McCloskey, G. S. Duesberg, N. McEvoy
Opublikowane w: Nanoscale, 2021, ISSN 2040-3372
Wydawca: Royas Society of Chemistry
DOI: 10.1039/d0nr06197b

Insulators for 2D nanoelectronics: the gap to bridge

Autorzy: Yury Yu. Illarionov, Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz, Tibor Grasser
Opublikowane w: Nature Communications, Numer 11/1, 2020, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-020-16640-8

Ballistic two-dimensional lateral heterojunction bipolar transistor

Autorzy: Leonardo Lucchesi; Gaetano Calogero; Gianluca Fiori; Giuseppe Iannaccone
Opublikowane w: Physical Review Research, Numer 5, 2021, ISSN 2643-1564
Wydawca: APS
DOI: 10.1103/physrevresearch.3.023158

Probing the impact of Tribolayers on Enhanced Wear Resistance Behaviour of Carbon-Rich Molybdenum-Based Coatings

Autorzy: D. D. Kumar, S. Hazra, K. Panda, P. Kuppusami, T. Stimpel-Lindner, G. S. Duesberg
Opublikowane w: ACS Applied Materials & Interfaces, 2022, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.2c03043

A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Autorzy: Demetrio Logoteta, Marco G. Pala, Jean Choukroun, Philippe Dollfus, Giuseppe Iannaccone
Opublikowane w: IEEE Electron Device Letters, Numer 40/9, 2019, Strona(/y) 1550-1553, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2928131

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

Autorzy: E. Reato, P. Palacios, B. Uzlu, M. Saeed, A. Grundmann, Z. Wang, D. S. Schneider, Z. Wang, M. Heuken, H. Kalisch, A. Vescan, A. Radenovic, A. Kis, D. Neumaier, R. Negra, M. C. Lemme
Opublikowane w: Advanced Materials, 2022, ISSN 1521-4095
Wydawca: WILEY
DOI: 10.1002/adma.202108469

Multiscale Pseudoatomistic Quantum Transport Modeling for van der Waals Heterostructures

Autorzy: G. Lovarelli, G. Calogero, G. Fiori, G. Iannaccone
Opublikowane w: Physical Review Applied, 2022, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/physrevapplied.18.034045

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS 2

Autorzy: Daniel S. Schneider, Annika Grundmann, Andreas Bablich, Vikram Passi, Satender Kataria, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Max C. Lemme
Opublikowane w: ACS Photonics, Numer 7/6, 2020, Strona(/y) 1388-1395, ISSN 2330-4022
Wydawca: American Chemical Society
DOI: 10.1021/acsphotonics.0c00361

Spectroscopic thickness and quality metrics for PtSe2 layers produced by top-down and bottom-up techniques

Autorzy: B. M. Szydłowska, O. Hartwig, B. Tywoniuk, T. Hartman, T. Stimpel-Lindner, Z. Sofer, N. McEvoy, G. S. Duesberg, C. Backes
Opublikowane w: 2D Materials, 2020, ISSN 2053-1583
Wydawca: IOP Publishing
DOI: 10.1088/2053-1583/aba9a0

How to report and benchmark emerging field-effect transistors

Autorzy: Zhihui Cheng; Chin-Sheng Pang; Peiqi Wang; Son T. Le; Yanqing Wu; Davood Shahrjerdi; Iuliana Radu; Max C. Lemme; Lian-Mao Peng; Xiangfeng Duan; Zhihong Chen; Joerg Appenzeller; Steven J. Koester; Eric Pop; Aaron D. Franklin; Curt A. Richter
Opublikowane w: Nature electronics, Numer 30, 2022, ISSN 2520-1131
Wydawca: Nature Publishing Group
DOI: 10.48550/arxiv.2203.16759

Analog Vector-Matrix Multiplier Based on Programmable Current Mirrors for Neural Network Integrated Circuits

Autorzy: Maksym Paliy, Sebastiano Strangio, Piero Ruiu, Tommaso Rizzo, Giuseppe Iannaccone
Opublikowane w: IEEE Access, Numer 8, 2020, Strona(/y) 203525-203537, ISSN 2169-3536
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3037017

Borophenes made easy

Autorzy: M. G. Cuxart, K. Seufert, V. Chesnyak, W. A. Waqas, A. Robert, M.-L. Bocquet, G. S. Duesberg, H. Sachdev, W. Auwärter
Opublikowane w: Science Advances, 2021, ISSN 2375-2548
Wydawca: AAAS
DOI: 10.1126/sciadv.abk1490

Assessment of Two-Dimensional Materials-based technology for Analog Neural Networks

Autorzy: M. Paliy, S. Strangio, P. Ruiu, G. Iannaccone
Opublikowane w: IEEE J. Explor. Solid-State Comp. Dev. Circuits, 2021, ISSN 2329-9231
Wydawca: IEEE
DOI: 10.1109/jxcdc.2021.3121534

Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators

Autorzy: Sajedeh Manzeli, Dumitru Dumcenco, Guilherme Migliato Marega, Andras Kis
Opublikowane w: Nature Communications, Numer 10/1, 2019, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-019-12795-1

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Autorzy: Enrique G. Marin, Damiano Marian, Marta Perucchini, Gianluca Fiori, Giuseppe Iannaccone
Opublikowane w: ACS Nano, Numer 14/2, 2020, Strona(/y) 1982-1989, ISSN 1936-0851
Wydawca: American Chemical Society
DOI: 10.1021/acsnano.9b08489

All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification

Autorzy: B. Zambrano, S. Strangio, T. Rizzo, E. Garzón, M. Lanuzza, G. Iannaccone
Opublikowane w: IEEE Access, 2022, ISSN 2169-3536
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2022.3203394

Electron Transport across Vertical Silicon/MoS 2 /Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Autorzy: Melkamu Belete, Olof Engström, Sam Vaziri, Gunther Lippert, Mindaugas Lukosius, Satender Kataria, Max C. Lemme
Opublikowane w: ACS Applied Materials & Interfaces, Numer 12/8, 2020, Strona(/y) 9656-9663, ISSN 1944-8244
Wydawca: American Chemical Society
DOI: 10.1021/acsami.9b21691

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Autorzy: Zhenxing Wang; Andreas Hemmetter; Burkay Uzlu; Mohamed Saeed; Ahmed Hamed; Satender Kataria; Renato Negra; Daniel Neumaier; Max C. Lemme
Opublikowane w: Advanced electronic materials 7(7), 2001210 (2021). doi:10.1002/aelm.202001210, Numer 32, 2021, ISSN 2199-160X
Wydawca: Wiley
DOI: 10.18154/rwth-2021-03740

2D oxides on metal materials: concepts, status, and perspectives

Autorzy: Giovanni Barcaro, Alessandro Fortunelli
Opublikowane w: Physical Chemistry Chemical Physics, Numer 21/22, 2019, Strona(/y) 11510-11536, ISSN 1463-9076
Wydawca: Royal Society of Chemistry
DOI: 10.1039/c9cp00972h

2D materials for future heterogeneous electronics

Autorzy: M. C. Lemme, D. Akinwande, C. Huyghebaert, C. Stampfer
Opublikowane w: Nature Communication, 2022, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-022-29001-4

Graphene-Based Microwave Circuits: A Review

Autorzy: M. Saeed, P. Palacios, M.-D. Wei, E. Baskent, C.-Y. Fan, B. Uzlu, K.-T. Wang, A. Hemmetter, Z. Wang, D. Neumaier, M. C. Lemme, R. Negra
Opublikowane w: Advanced Materials, 2022, ISSN 1521-4095
Wydawca: Wiley
DOI: 10.1002/adma.202108473

Hydrogenation of diamond nanowire surfaces for effective electrostatic charge storage

Autorzy: K. Panda, J.-E. Kim, K. J. Sankaran, I-N. Lin, K. Haenen, G. S. Duesberg, J. Y. Park
Opublikowane w: Nanoscale, 2021, ISSN 2040-3372
Wydawca: Royal Society of Chemistry
DOI: 10.1039/d1nr00189b

Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons

Autorzy: Damiano Marian, Enrique G. Marin, Giuseppe Iannaccone, Gianluca Fiori
Opublikowane w: Physical Review Applied, Numer 14/6, 2020, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/PhysRevApplied.14.064019

Covalent Bisfunctionalization of Two‐Dimensional Molybdenum Disulfide

Autorzy: X. Chen, C. Bartlam, V. Lloret, N. M. Badlyan, S. Wolff, R. Gillen, T. Stimpel-Lindner, J. Maultzsch, G. S. Duesberg, K. C. Knirsch, A. Hirsch
Opublikowane w: Angew. Chem. Int., 2021, ISSN 1433-7851
Wydawca: John Wiley & Sons Ltd.
DOI: 10.1002/anie.202103353

Three-dimensional printing of silica-glass structures with submicrometric features

Autorzy: Laakso, Miku; Huang, Po-Han; Edinger, Pierre; Hartwig, Oliver; Duesberg, Georg S.; Errando-Herranz, Carlos; Stemme, Göran; Gylfason, Kristinn B.; Niklaus, Frank
Opublikowane w: Numer 6, 2020
Wydawca: arXiv

MoS2/Quantum Dot Hybrid Photodetectors on Flexible Substrates

Autorzy: O. Yakar, B. Uzlu, D. S. Schneider, A. Grundmann, S. Becker, J. S. Niehaus, H. Schlicke, M. Heuken, H. Kalisch, A. Vescan, Z. Wang, M. C. Lemme
Opublikowane w: 2022 Device Research Conference (DRC), 2022
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/drc55272.2022.9855791

Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors

Autorzy: D. Braun, S. Lukas, L. Völkel, O. Hartwig, M. Prechtl, M. Belete, S. Kataria, T. Wahlbrink, A. Daus, G. S. Duesberg, and M. C. Lemme
Opublikowane w: 2022 Device Research Conference (DRC), 2022
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/drc55272.2022.9855787

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