Quantum Engineering for Machine Learning

Risultati finali

Fabrication and characterization of second gen. LVH-NVMs

Fabrication and characterization of second gen LVHNVMs

Final report on modeling, technology benchmarking and potential for exploitation

Final report on modeling technology benchmarking and potential for exploitation

Final Report

Final report including report on communication exploitation and dissemination

Fabrication and characterization of first gen. LVH-NVMs

Fabrication and characterization of first gen LVHNVMs

Fabrication and characterization of second gen. LH-FETs

Fabrication and characterization of second gen LHFETs

Modeling of 1st generation LH-FETs and LVH-NVMs
Electrical parameters and Wannier Hamiltonian of LH of TDMCs
Modeling of 2nd generation LH-FETs and LVH-NVMs

Modeling of 2nd generation LHFETs and LVHNVMs also a public version of the deliverable will be available

Multiscale modeling of device building blocks with candidate heterostructures
Fabrication and characterization of first gen. LH-FETs

Fabrication and characterization of first gen LHFETs

Second Annual Report

Second annual report (including dissemination, exploitation and communication report)

Launch of intranet project collaboration tool

Data Management Plan

Data Management Plan suitable for ORDP: Open Research Data Pilot

Project public launch

presentation, visual identity, website, video, social media

Second dissemination and communication campaign

Second dissemination and communication campaign Concentrated actions of press releases press kits video articles sent to science and tech magazineswebsites

First Research/Industry Workshop

First ResearchIndustry Workshop

First Dissemination and Communication Campaign

First Dissemination and Communication Campaign: Concentrated actions of press releases, press kits, video, articles sent to science and tech magazines/websites

Second Research-Industry Workshop

Second ResearchIndustry Workshop

Pubblicazioni

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Autori: Y. Zhao, M. Tripathi, K. Čerņevičs, A. Avsar, H.G. Yi, J.F. Gonzalez Marin, C.-Y. Cheon, Z. Wang, O.V. Yazyev, A. Kis
Pubblicato in: Nature Communication, 2023, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-022-35651-1

Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Autori: D. Logoteta, J. Cao, M. Pala, P. Dollfus, Y. Lee, G. Iannaccone
Pubblicato in: Physical Review Research, Numero 2/4, 2020, ISSN 2643-1564
Editore: APS Physics
DOI: 10.1103/physrevresearch.2.043286

Rapid and Large-Area Visualization of Grain Boundaries in MoS 2 on SiO 2 Using Vapor Hydrofluoric Acid

Autori: Xuge Fan, Rita Siris, Oliver Hartwig, Georg S. Duesberg, Frank Niklaus
Pubblicato in: ACS Applied Materials & Interfaces, Numero 12/30, 2020, Pagina/e 34049-34057, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.0c06910

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based Plasticity

Autori: Melkamu Belete, Satender Kataria, Aykut Turfanda, Sam Vaziri, Thorsten Wahlbrink, Olof Engström, Max C. Lemme
Pubblicato in: Advanced Electronic Materials, Numero 6/3, 2020, Pagina/e 1900892, ISSN 2199-160X
Editore: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.201900892

Defect Engineering of Two‐Dimensional Molybdenum Disulfide

Autori: Xin Chen, Peter Denninger, Tanja Stimpel‐Lindner, Erdmann Spiecker, Georg S. Duesberg, Claudia Backes, Kathrin C. Knirsch, Andreas Hirsch
Pubblicato in: Chemistry – A European Journal, Numero 26/29, 2020, Pagina/e 6535-6544, ISSN 0947-6539
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/chem.202000286

Substitutional p-Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD

Autori: Zhenyu Wang, Mukesh Tripathi, Zahra Golsanamlou, Poonam Kumari, Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta, Gianluca Fiori, Luca Sementa, Guilherme Migliato Marega, Hyun Goo Ji, Yanfei Zhao, Aleksandra Radenovic, Giuseppe Iannaccone, Alessandro Fortunelli, and Andras Kis
Pubblicato in: Advanced Materials, 2023, ISSN 1521-4095
Editore: Wiley
DOI: 10.1002/adma.202209371

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

Autori: Kuanysh Zhussupbekov, Conor P. Cullen, Ainur Zhussupbekova, Igor V. Shvets, Georg S. Duesberg, Niall McEvoy, Cormac Ó Coileáin
Pubblicato in: RSC Advances, Numero 10/69, 2020, Pagina/e 42001-42007, ISSN 2046-2069
Editore: Royal Society of Chemistry
DOI: 10.1039/d0ra07405e

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Autori: G. Migliato Marega, Z. Wang, M. Paliy, G. Giusi, S. Strangio, F. Castiglione, C. Callegari, M. Tripathi, A. Radenovic, G. Iannaccone A. Kis,
Pubblicato in: ACS Nano, 2022, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.1c07065

Logic-in-memory based on an atomically thin semiconductor

Autori: Guilherme Migliato Marega, Yanfei Zhao, Ahmet Avsar, Zhenyu Wang, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis
Pubblicato in: Nature, Numero 587/7832, 2020, Pagina/e 72-77, ISSN 0028-0836
Editore: Nature Publishing Group
DOI: 10.1038/s41586-020-2861-0

Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS

Autori: Tommaso Rizzo; Sebastiano Strangio; Giuseppe Iannaccone
Pubblicato in: IEEE Access, Numero 15, 2022, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2022.3172488

Highly Selective Non‐Covalent On‐Chip Functionalization of Layered Materials

Autori: R. Tilmann, C. Weiß, C. P. Cullen, L. Peters, O. Hartwig, L. Höltgen, T. Stimpel-Lindner, K. C. Knirsch, N. McEvoy, A. Hirsch, G. S. Duesberg
Pubblicato in: Advanced Electronic Materials, 2021, ISSN 2199-160X
Editore: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.202000564

Theoretical Analysis of a 2D Metallic/Semiconducting Transition‐Metal Dichalcogenide NbS 2 //WSe 2 Hybrid Interface

Autori: Zahra Golsanamlou, Luca Sementa, Teresa Cusati, Giuseppe Iannaccone, Alessandro Fortunelli
Pubblicato in: Advanced Theory and Simulations, Numero 3/12, 2020, Pagina/e 2000164, ISSN 2513-0390
Editore: Wiley
DOI: 10.1002/adts.202000164

Covalent Patterning of 2D MoS2

Autori: X. Chen, M. Kohring, M. Assebban, B. Tywoniuk, C. Bartlam, N. M. Badlyan, J. Maultzsch, G. S. Duesberg, H. B. Weber, K. C. Knirsch, A. Hirsch
Pubblicato in: Chemistry A European Journal, 2021, ISSN 1521-3765
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/chem.202102021

Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

Autori: Z. Wang, C.-Y. Cheon, M. Tripathi, G. Migliato Marega, Y. Zhao, H. Goo Ji, M. Macha, A. Radenovic, A. Kis
Pubblicato in: ACS Nano, 2021, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.1c07956

Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces

Autori: Calogero, Gaetano; Marian, Damiano; Marin, Enrique G.; Fiori, Gianluca; Iannaccone, Giuseppe
Pubblicato in: Scientific Report, Numero 14, 2021, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-021-98080-y

Vertical Heterostructures between Transition-Metal Dichalcogenides—A Theoretical Analysis of the NbS2/WSe2 Junction

Autori: Z. Golsanamlou, P. Kumari, L. Sementa, T. Cusati, G. Iannaccone, A. Fortunelli
Pubblicato in: Advanced Electronics Materials, 2022, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/aelm.202200020

Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

Autori: M. Prechtl, S. Parhizkar, O. Hartwig, K. Lee, J. Biba, T. Stimpel-Lindner, F. Gity, A. Schels, J. Bolten, S. Suckow, A. L. Giesecke, M. C. Lemme, G. S. Duesberg
Pubblicato in: Advanced Functional Materials, 2021, ISSN 1616-3028
Editore: Wiley
DOI: 10.1002/adfm.202103936

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Autori: S. Lukas, O. Hartwig, M. Prechtl, G. Capraro, J. Bolten, A. Meledin, J. Mayer, D. Neumaier, S. Kataria, G. S. Duesberg, M. C. Lemme
Pubblicato in: Advanced Functional Materials, 2021, ISSN 1616-3028
Editore: Wiley
DOI: 10.1002/adfm.202102929

Stable Al2O3 encapsulation of MoS2-FETs enabled by CVD Grown h-BN

Autori: A.Piacentini, D. Marian, D. S. Schneider, E.G. Marin, Z. Wang, M. Otto, B. Canto, A. Radenovic, A. Kis, G. Fiori, M.C. Lemme, D. Neumaier
Pubblicato in: Advanced Electronic Materials, 2022, ISSN 2199-160X
Editore: WILEY‐VCH Verlag GmbH & Co
DOI: 10.1002/aelm.202200123

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Autori: C. P. Cullen, C. Ó Coileáin, J. B. McManus, O. Hartwig, D. McCloskey, G. S. Duesberg, N. McEvoy
Pubblicato in: Nanoscale, 2021, ISSN 2040-3372
Editore: Royas Society of Chemistry
DOI: 10.1039/d0nr06197b

Insulators for 2D nanoelectronics: the gap to bridge

Autori: Yury Yu. Illarionov, Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz, Tibor Grasser
Pubblicato in: Nature Communications, Numero 11/1, 2020, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-020-16640-8

Ballistic two-dimensional lateral heterojunction bipolar transistor

Autori: Leonardo Lucchesi; Gaetano Calogero; Gianluca Fiori; Giuseppe Iannaccone
Pubblicato in: Physical Review Research, Numero 5, 2021, ISSN 2643-1564
Editore: APS
DOI: 10.1103/physrevresearch.3.023158

Probing the impact of Tribolayers on Enhanced Wear Resistance Behaviour of Carbon-Rich Molybdenum-Based Coatings

Autori: D. D. Kumar, S. Hazra, K. Panda, P. Kuppusami, T. Stimpel-Lindner, G. S. Duesberg
Pubblicato in: ACS Applied Materials & Interfaces, 2022, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.2c03043

A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Autori: Demetrio Logoteta, Marco G. Pala, Jean Choukroun, Philippe Dollfus, Giuseppe Iannaccone
Pubblicato in: IEEE Electron Device Letters, Numero 40/9, 2019, Pagina/e 1550-1553, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2928131

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

Autori: E. Reato, P. Palacios, B. Uzlu, M. Saeed, A. Grundmann, Z. Wang, D. S. Schneider, Z. Wang, M. Heuken, H. Kalisch, A. Vescan, A. Radenovic, A. Kis, D. Neumaier, R. Negra, M. C. Lemme
Pubblicato in: Advanced Materials, 2022, ISSN 1521-4095
Editore: WILEY
DOI: 10.1002/adma.202108469

Multiscale Pseudoatomistic Quantum Transport Modeling for van der Waals Heterostructures

Autori: G. Lovarelli, G. Calogero, G. Fiori, G. Iannaccone
Pubblicato in: Physical Review Applied, 2022, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.18.034045

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS 2

Autori: Daniel S. Schneider, Annika Grundmann, Andreas Bablich, Vikram Passi, Satender Kataria, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Max C. Lemme
Pubblicato in: ACS Photonics, Numero 7/6, 2020, Pagina/e 1388-1395, ISSN 2330-4022
Editore: American Chemical Society
DOI: 10.1021/acsphotonics.0c00361

Spectroscopic thickness and quality metrics for PtSe2 layers produced by top-down and bottom-up techniques

Autori: B. M. Szydłowska, O. Hartwig, B. Tywoniuk, T. Hartman, T. Stimpel-Lindner, Z. Sofer, N. McEvoy, G. S. Duesberg, C. Backes
Pubblicato in: 2D Materials, 2020, ISSN 2053-1583
Editore: IOP Publishing
DOI: 10.1088/2053-1583/aba9a0

How to report and benchmark emerging field-effect transistors

Autori: Zhihui Cheng; Chin-Sheng Pang; Peiqi Wang; Son T. Le; Yanqing Wu; Davood Shahrjerdi; Iuliana Radu; Max C. Lemme; Lian-Mao Peng; Xiangfeng Duan; Zhihong Chen; Joerg Appenzeller; Steven J. Koester; Eric Pop; Aaron D. Franklin; Curt A. Richter
Pubblicato in: Nature electronics, Numero 30, 2022, ISSN 2520-1131
Editore: Nature Publishing Group
DOI: 10.48550/arxiv.2203.16759

Analog Vector-Matrix Multiplier Based on Programmable Current Mirrors for Neural Network Integrated Circuits

Autori: Maksym Paliy, Sebastiano Strangio, Piero Ruiu, Tommaso Rizzo, Giuseppe Iannaccone
Pubblicato in: IEEE Access, Numero 8, 2020, Pagina/e 203525-203537, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2020.3037017

Borophenes made easy

Autori: M. G. Cuxart, K. Seufert, V. Chesnyak, W. A. Waqas, A. Robert, M.-L. Bocquet, G. S. Duesberg, H. Sachdev, W. Auwärter
Pubblicato in: Science Advances, 2021, ISSN 2375-2548
Editore: AAAS
DOI: 10.1126/sciadv.abk1490

Assessment of Two-Dimensional Materials-based technology for Analog Neural Networks

Autori: M. Paliy, S. Strangio, P. Ruiu, G. Iannaccone
Pubblicato in: IEEE J. Explor. Solid-State Comp. Dev. Circuits, 2021, ISSN 2329-9231
Editore: IEEE
DOI: 10.1109/jxcdc.2021.3121534

Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators

Autori: Sajedeh Manzeli, Dumitru Dumcenco, Guilherme Migliato Marega, Andras Kis
Pubblicato in: Nature Communications, Numero 10/1, 2019, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-019-12795-1

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Autori: Enrique G. Marin, Damiano Marian, Marta Perucchini, Gianluca Fiori, Giuseppe Iannaccone
Pubblicato in: ACS Nano, Numero 14/2, 2020, Pagina/e 1982-1989, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.9b08489

All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification

Autori: B. Zambrano, S. Strangio, T. Rizzo, E. Garzón, M. Lanuzza, G. Iannaccone
Pubblicato in: IEEE Access, 2022, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2022.3203394

Electron Transport across Vertical Silicon/MoS 2 /Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Autori: Melkamu Belete, Olof Engström, Sam Vaziri, Gunther Lippert, Mindaugas Lukosius, Satender Kataria, Max C. Lemme
Pubblicato in: ACS Applied Materials & Interfaces, Numero 12/8, 2020, Pagina/e 9656-9663, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.9b21691

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Autori: Zhenxing Wang; Andreas Hemmetter; Burkay Uzlu; Mohamed Saeed; Ahmed Hamed; Satender Kataria; Renato Negra; Daniel Neumaier; Max C. Lemme
Pubblicato in: Advanced electronic materials 7(7), 2001210 (2021). doi:10.1002/aelm.202001210, Numero 32, 2021, ISSN 2199-160X
Editore: Wiley
DOI: 10.18154/rwth-2021-03740

2D oxides on metal materials: concepts, status, and perspectives

Autori: Giovanni Barcaro, Alessandro Fortunelli
Pubblicato in: Physical Chemistry Chemical Physics, Numero 21/22, 2019, Pagina/e 11510-11536, ISSN 1463-9076
Editore: Royal Society of Chemistry
DOI: 10.1039/c9cp00972h

2D materials for future heterogeneous electronics

Autori: M. C. Lemme, D. Akinwande, C. Huyghebaert, C. Stampfer
Pubblicato in: Nature Communication, 2022, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-022-29001-4

Graphene-Based Microwave Circuits: A Review

Autori: M. Saeed, P. Palacios, M.-D. Wei, E. Baskent, C.-Y. Fan, B. Uzlu, K.-T. Wang, A. Hemmetter, Z. Wang, D. Neumaier, M. C. Lemme, R. Negra
Pubblicato in: Advanced Materials, 2022, ISSN 1521-4095
Editore: Wiley
DOI: 10.1002/adma.202108473

Hydrogenation of diamond nanowire surfaces for effective electrostatic charge storage

Autori: K. Panda, J.-E. Kim, K. J. Sankaran, I-N. Lin, K. Haenen, G. S. Duesberg, J. Y. Park
Pubblicato in: Nanoscale, 2021, ISSN 2040-3372
Editore: Royal Society of Chemistry
DOI: 10.1039/d1nr00189b

Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons

Autori: Damiano Marian, Enrique G. Marin, Giuseppe Iannaccone, Gianluca Fiori
Pubblicato in: Physical Review Applied, Numero 14/6, 2020, ISSN 2331-7019
Editore: APS
DOI: 10.1103/PhysRevApplied.14.064019

Covalent Bisfunctionalization of Two‐Dimensional Molybdenum Disulfide

Autori: X. Chen, C. Bartlam, V. Lloret, N. M. Badlyan, S. Wolff, R. Gillen, T. Stimpel-Lindner, J. Maultzsch, G. S. Duesberg, K. C. Knirsch, A. Hirsch
Pubblicato in: Angew. Chem. Int., 2021, ISSN 1433-7851
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/anie.202103353

Three-dimensional printing of silica-glass structures with submicrometric features

Autori: Laakso, Miku; Huang, Po-Han; Edinger, Pierre; Hartwig, Oliver; Duesberg, Georg S.; Errando-Herranz, Carlos; Stemme, Göran; Gylfason, Kristinn B.; Niklaus, Frank
Pubblicato in: Numero 6, 2020
Editore: arXiv

MoS2/Quantum Dot Hybrid Photodetectors on Flexible Substrates

Autori: O. Yakar, B. Uzlu, D. S. Schneider, A. Grundmann, S. Becker, J. S. Niehaus, H. Schlicke, M. Heuken, H. Kalisch, A. Vescan, Z. Wang, M. C. Lemme
Pubblicato in: 2022 Device Research Conference (DRC), 2022
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/drc55272.2022.9855791

Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors

Autori: D. Braun, S. Lukas, L. Völkel, O. Hartwig, M. Prechtl, M. Belete, S. Kataria, T. Wahlbrink, A. Daus, G. S. Duesberg, and M. C. Lemme
Pubblicato in: 2022 Device Research Conference (DRC), 2022
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/drc55272.2022.9855787

È in corso la ricerca di dati su OpenAIRE...

Risultati finali

Pubblicazioni

Condividi questa pagina

Scarica