Project description
Novel processing lowers the price of silicon's potential successor
Semiconductors are the building blocks of modern electronics. For decades, silicon has been the workhorse, but it is reaching its theoretical limits for improvement. Gallium nitride (GaN), commonly used in light-emitting diodes, is quickly stealing the spotlight. It has higher power density, can conduct electrons hundreds of times more efficiently than silicon and is more temperature resistant and reliable. Altogether, GaN can facilitate smaller, faster, more reliable devices with higher efficiency enabling volume and lifecycle cost reductions. To make GaN accessible to mainstream applications, the EU-funded eleGaNt project will address important barriers – its cost in bulk form and degraded performance in others. To overcome these challenges, the team will optimise its process to grow superior-quality GaN thin films on any substrate.
Objective
As the world becomes digitalized, the need for more energy efficient, faster and better performing Electronic Components and Systems (ECS) becomes paramount. These ECS are fully dependent on the semiconductor materials within, currently over 90% silicon (Si)-based. Pure Si technology can no longer cater to the needs placed upon ECS for power electronics and RF applications and thus new semiconductor technologies based on gallium nitride (GaN) are being explored. GaN material properties make it the primary choice for future generations of energy-efficient, high performance power electronics devices, necessary to modernize the energy grid and allow for sustainable energy production and use. However, bulk GaN is prohibitively expensive and thus inaccessible to mainstream applications. The main approach to making the technology commercially viable, reducing its cost significantly, is growing GaN layers on other materials, such as Si. Today, this poses a major technical barrier: existing methods result in high defect densities in the GaN layers, offering a fraction of the efficiency of bulk GaN and therefore poor ECS performance. Switching to GaN-on-Si today thus offers very limited advantages. To harness the full potential of GaN in a commercially viable way, we, at Hexagem, have developed EleGaNt, a cutting-edge new method of growing GaN semiconductor layers of unprecedented quality on any substrate. EleGaNt is the first to deliver capabilities on par with bulk GaN at the cost of current market-available underperforming GaN-on-Si. Our patented EleGaNt growth method introduces a new era of semiconductor wafer tech for an energy efficient power and RF electronics market and has the potential to become the new silicon in the multi-billion power electronics industry, whilst also offering a route towards expanding the TAM for GaN tech. We will license our tech to ECS manufacturers for integration into their fabs, whilst we remain a cutting-edge tech development company.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- engineering and technology electrical engineering, electronic engineering, information engineering information engineering telecommunications telecommunications networks mobile network 5G
- engineering and technology environmental engineering energy and fuels renewable energy
- natural sciences chemical sciences inorganic chemistry post-transition metals
- natural sciences physical sciences electromagnetism and electronics semiconductivity
- natural sciences chemical sciences inorganic chemistry metalloids
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Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
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H2020-EU.2.3. - INDUSTRIAL LEADERSHIP - Innovation In SMEs
MAIN PROGRAMME
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H2020-EU.3. - PRIORITY 'Societal challenges
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H2020-EU.2.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies
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Topic(s)
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Funding Scheme
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
SME-1 - SME instrument phase 1
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Call for proposal
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
(opens in new window) H2020-EIC-SMEInst-2018-2020
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Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.
223 63 LUND
Sweden
The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.