Novel Oxides and Topological Interfaces for quantum Computing Electronics

Informazioni relative al progetto

NOTICE

ID dell’accordo di sovvenzione: 864483

DOI

10.3030/864483

Progetto chiuso

Data della firma CE 19 Dicembre 2019

Data di avvio 1 Settembre 2020

Data di completamento 28 Febbraio 2026

Finanziato da

• EXCELLENT SCIENCE - European Research Council (ERC)

Costo totale

€ 2 332 691,00

Contributo UE

€ 2 332 691,00

Coordinato da

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Belgium

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Other (3)

Stoichiometry and Thickness of Epitaxial SrTiO3 onSilicon (001): an Investigation of Physical, Optical andElectrical Properties

Autori: Andries Boelen, Marina Baryshnikova, Anja Ulrich, Kamal Brahim, Joris Van de Vondel, Christian Haffner, Clement Merckling
Pubblicato in: 2025
Editore: ArXiv

Engineering high Pockels coefficients in thin-film strontium titanate for cryogenic quantum electro-optic applications

Autori: Anja Ulrich, Kamal Brahim, Andries Boelen, Michiel Debaets, Conglin Sun, Yishu Huang, Sandeep Seema Saseendran, Marina Baryshnikova, Paola Favia, Thomas Nuytten, Stefanie Sergeant, Kasper Van Gasse, Bart Kuyken, Kristiaan De Greve, Clement Merckling, Christian Haffner
Pubblicato in: 2025
Editore: ArXiv

Cryogenic piezoelectric effects in thin film strontium titanate devices

Autori: Ahmed Khalil, Anja Ulrich, Kamal Brahim, Andries Boelen, Danut-Valentin Dinu, Halil Cuma, Ioannis Petrides, Sandeep Seema Saseendran, Xavier Rottenberg, Pol Van Dorpe, Kristiaan De Greve, Oskar Painter, Clement Merckling, Frédéric Peyskens, Christian Haffner
Pubblicato in: arXiv, 2026
Editore: arXiv
DOI: 10.48550/arxiv.2602.17152

Peer reviewed articles (11)

Differential evolution optimization of Rutherford backscattering spectra.

Autori: René Heller, Nico Klingner, Niels Claessens, Clement Merckling, Johan Meersschaut
Pubblicato in: Journal Applied Physics, Numero 132 (16), 2023, Pagina/e 165302, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/5.0096497

Impact of Cationic Stoichiometry on Physical, Optical and Electrical Properties of SrTiO3 Thin Films Grown on (001)-Oriented Si Substrates

Autori: Marina Baryshnikova, Andries Boelen, Luca Ceccon, Vincent Herreman, Sean R. C. McMitchell, Christian Haffner, Clement Merckling
Pubblicato in: Materials, Numero 17, 2024, Pagina/e 1714, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma17081714

Epitaxial Growth of BaBiO3 Thin Films on SrTiO3(001) and MgO(001) Substrates Using Molecular Beam Epitaxy: Controlling the Competition Between Crystal Orientations

Autori: Islam Ahmed, Stefan De Gendt, Clement Merckling
Pubblicato in: Crystals, Numero 15, 2025, Pagina/e 534, ISSN 2073-4352
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst15060534

Stoichiometry and Thickness of Epitaxial SrTiO₃ on Silicon (001): An Investigation of Physical, Optical, and Electrical Properties

Autori: Andries Boelen, Marina Baryshnikova, Anja Ulrich, Kamal Brahim, Joris Van de Vondel, Christian Haffner, Clement Merckling
Pubblicato in: Crystal Growth & Design, Numero 25, 2025, Pagina/e 5752-5760, ISSN 1528-7483
Editore: American Chemical Society
DOI: 10.1021/acs.cgd.5c00103

Structural transformation for BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) induced by an in-situ molecular beam epitaxy cooldown process

Autori: Islam Ahmed, Olivier Richard, Partrick Carolan, Marco Gambin, Luca Ceccon, Moloud Kaviani, Stefan De Gendt, Clement Merckling
Pubblicato in: Communications Materials, Numero 6, 2025, ISSN 2662-4443
Editore: Springer Science and Business Media LLC
DOI: 10.1038/s43246-025-00877-1

Self-regulating plasma-assisted growth of epitaxial BaBiO3 thin-film on SrTiO3-buffered Si(001) substrate

Autori: Islam Ahmed, Stefan De Gendt, Clement Merckling
Pubblicato in: Journal of Applied Physics, Numero 132, 2022, Pagina/e 225304, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/5.0101227

Engineering high Pockels coefficients in thin-film strontium titanate for cryogenic quantum electro-optic applications

Autori: Anja Ulrich, Kamal Brahim, Andries Boelen, Michiel Debaets, Ahmed Khalil, Conglin Sun, Yishu Huang, Sandeep Seema Saseendran, Marina Baryshnikova, Paola Favia, Thomas Nuytten, Stefanie Sergeant, Kasper Van Gasse, Bart Kuyken, Kristiaan De Greve, Clement Merckling, Christian Haffner
Pubblicato in: Science, Numero 390, 2025, Pagina/e 390-393, ISSN 0036-8075
Editore: American Association for the Advancement of Science
DOI: 10.1126/science.adx3741

Evidence for intrinsic magnetic scatterers in the topological semimetal (Bi2)5(Bi2Se3)7

Autori: Pascal Gehring, Clement Merckling, Ruishen Meng, Valentin Fonck, Bart Raes, Michel Houssa, Joris Van de Vondel, Stefan De Gendt
Pubblicato in: APL Materials, Numero 11 (11), 2023, Pagina/e 111116, ISSN 2166-532X
Editore: AIP Publishing
DOI: 10.1063/5.0167544

Influence of thickness scaling on the electronic structure and optical properties of oxygen deficient BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) substrate

Autori: I. Ahmed, M. Korytov, S. Sergeant, T. Nuytten, T. Conard, S. De Gendt, C. Merckling
Pubblicato in: APL Materials, Numero 12, 2024, ISSN 2166-532X
Editore: AIP Publishing
DOI: 10.1063/5.0188209

Interfacial control of SrTiO3/Si(001) epitaxy and its effect on physical and optical properties

Autori: Tsang-Hsuan Wang, Robert Gehlhaar, Thierry Conard, Paola Favia, Jan Genoe, Clement Merckling
Pubblicato in: Journal of Crystal Growth, Numero 582 (2022) 126524, 2022, ISSN 1873-5002
Editore: Elsevier
DOI: 10.1016/j.jcrysgro.2022.126524

Fluorine doping of barium bismuthate by SF6 plasma

Autori: L. Ceccon, I. Ahmed, M. Kaviani, J. Van de Vondel, G. Pourtois, C. Merckling
Pubblicato in: AIP Advances, Numero 15, 2025, ISSN 2158-3226
Editore: American Institute of Physics Inc.
DOI: 10.1063/5.0283535