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Modeling Unconventional Nanoscaled Device FABrication

Project description

Simulation software will help nanoscale architectures realise the promise of more than Moore

For the last 50 years, shrinking transistors have enabled more and more processing capacity to be put on the same size chips, following Intel co-founder Gordon Moore's predictions in the 1960s. Moore's Law is reaching its physical and economic limits – our future virtually unlimited interconnectedness will depend on a paradigm shift. Much as high-rises are a solution to urban growth, emerging 3D sequential integration could alleviate the problems faced by 2D CMOS transistor technology. Bringing this architecture down to the nanoscale could additionally enhance the already sizeable benefits. Building on extensive experimental work and data, the EU-funded MUNDFAB project is developing the requisite modelling and simulation tools that will foster innovation via virtual fabrication of the next generation of nanoscale electronic devices.

Objective

Because of power, energy, and cost reasons, a further development of big data and mobility applications as well as the Internet of Things will require continued Power-Performance-Area-and-Cost (PPAC, formerly More Moore) scaling. This is predicted to lead within less than a decade to a paradigm change towards the 3D sequential integration of nanosized structures. While technology-computer aided design (TCAD) is indispensable now particularly for the early stages of industrial research and development, we face the situation that classical continuum tools lose their predictivity when going towards the nano world and towards the very low temperature processes required for 3D sequential integration. They are then neither able to predict the reduced electrical activation of dopants, nor topography effects like faceting, nor defect formation and growth. Accordingly, the NEREID NanoElectronics Roadmap for Europe explicitly requests to “…develop new tools taking into account all the new materials, technologies and device architectures…” To overcome the insufficient state of models and tools for a predictive simulation of low-temperature processing of high-mobility layers like silicon-germanium alloys, dedicated experimental investigations will be performed for solid-phase epitaxial regrowth, epitaxial deposition, and nanosecond laser annealing. Model development will be based whenever possible on the KMC and LKMC tools of Sentaurus Process, complemented by model development with own tools only when the functionality of commercial products is not sufficient. Own tools will be looped into the Sentaurus TCAD workflow so that in the end we will for the first time present a complete calibrated toolchain able to simulate the virtual fabrication of the3D sequential integration of nanoscaled devices. This will allow continuing further on the success story of the use of TCAD for the early development of the next generations of unconventional nanoscaled electron devices.

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Programme(s)

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Topic(s)

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Funding Scheme

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RIA - Research and Innovation action

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Call for proposal

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(opens in new window) H2020-ICT-2018-20

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Coordinator

FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG EV
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 746 047,50
Address
HANSASTRASSE 27C
80686 MUNCHEN
Germany

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Region
Bayern Oberbayern München, Kreisfreie Stadt
Activity type
Research Organisations
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 746 047,50

Participants (7)

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