Fundamental Breakthrough in Detection of Atmospheric Free Radicals

Risultati finali

Annual reports on dissemination, exploitation and communication activities (R2)

A summary of the dissemination exploitation and communication activities will be distributed via email to all consortium members stakeholders and interested parties in the form of an annual report and published on project website

Annual reports on dissemination, exploitation and communication activities (R4)

A summary of the dissemination, exploitation and communication activities will be distributed via email to all consortium members, stakeholders and interested parties in the form of an annual report and published on the project website.

Annual reports on dissemination, exploitation and communication activities (R3)

A summary of the dissemination, exploitation and communication activities will be distributed via email to all consortium members, stakeholders and interested parties in the form of an annual report and published on project website

Annual reports on dissemination, exploitation and communication activities (R1)

A summary of the dissemination exploitation and communication activities will be distributed via email to all consortium members stakeholders and interested parties in the form of an annual report and published on project website

Project website and social media accounts

Corporate identity for the RADICAL project will be created in order to ensure consistency across all touchpoints project printouts website presentation templates etc The RADICAL project will have a dedicated website in English for displaying information about the project objectives activities and results to interested parties stakeholders and the public The website will be setup by M4 and maintained for the duration of the project and up to 3 years after its completion Social media accounts on eg Facebook Twitter LinkedIn addressing both professionals and public through regular posts will be established by M4 and maintained over the lifetime of the project

Pubblicazioni

Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing

Autori: Muhammad Bilal Khan, Slawomir Prucnal, Sayantan Ghosh, Dipjyoti Deb, René Hübner, Darius Pohl, Lars Rebohle, Thomas Mikolajick, Artur Erbe, and Yordan M. Georgiev
Pubblicato in: Langmuir, 2021, ISSN 0743-7463
Editore: American Chemical Society
DOI: 10.1021/acs.langmuir.1c01862

Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide

Autori: Vaishali Vardhan, Subhajit Biswas, Sayantan Ghosh, Leonidas Tsetseris, Tandra Ghoshal, Stig Hellebust, Yordan M. Georgiev, Justin D. Holmes
Pubblicato in: Advanced Electronic Materials, Numero 11, 2025, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/aelm.202400338

Exfoliated Molybdenum Disulfide Nanosheet Networks as Sensing Materials for Nitrogen Dioxide Detection

Autori: Kusuma Urs, Tian Carey, Leonidas Tsetseris, Shixin Liu, Kevin Synnatschke, Zdeněk Sofer, Jonathan N. Coleman, John Charles Wenger, Subhajit Biswas, Justin D. Holmes
Pubblicato in: ACS Applied Nano Materials, Numero 8, 2025, Pagina/e 2141-2152, ISSN 2574-0970
Editore: American Chemical Society
DOI: 10.1021/acsanm.4c05066

Quantitative Characterization of Organosilane Monolayers by Oxidative Dissociation of Monolayer Molecules

Autori: Naeem Iqbal, Amy Wolstenholme-Hogg, James R. Gompels, Victor Chechik
Pubblicato in: Analytical Chemistry, Numero 97, 2025, Pagina/e 4661-4667, ISSN 0003-2700
Editore: American Chemical Society
DOI: 10.1021/acs.analchem.4c06937

High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing

Autori: Sayantan Ghosh, Muhammad Bilal Khan, Slawomir Prucnal, René Hübner, Phanish Chava, Tom Mauersberger, Thomas Mikolajick, Artur Erbe, Yordan M. Georgiev
Pubblicato in: ACS Applied Electronic Materials, Numero 7, 2025, Pagina/e 2284-2297, ISSN 2637-6113
Editore: American Chemical Society
DOI: 10.1021/acsaelm.4c01896

Nitrogen Dioxide Detection with Ambipolar Silicon Nanowire Transistor Sensors

Autori: Vaishali Vardhan, Subhajit Biswas, Sayantan Ghosh, Leonidas Tsetseris, S. Hellebust, Ahmad Echresh, Yordan M. Georgiev, Justin D. Holmes
Pubblicato in: ACS Applied Materials & Interfaces, Numero 17, 2025, Pagina/e 9539-9553, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.4c18322

Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

Autori: Sayantan Ghosh, Muhammad Bilal Khan, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Slawomir Prucnal, René Hübner, Thomas Mikolajick, Artur Erbe, Yordan M. Georgiev
Pubblicato in: ACS Applied Materials & Interfaces, Numero 15, 2023, Pagina/e 40709-40718, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.3c04808

High‐Performance and Ultrafast Single Germanium Nanowire Photodetectors

Autori: Ahmad Echresh, Mohd Saif Shaikh, Mircea Traian Catuneanu, Himani Arora, Shengqiang Zhou, Artur Erbe, Manfred Helm, Lars Rebohle, Kambiz Jamshidi, Yonder Berencén, Yordan M. Georgiev
Pubblicato in: Advanced Optical Materials, 2025, ISSN 2195-1071
Editore: Wiley
DOI: 10.1002/adom.202403097

Study of Nanowire Characteristics of a Junctionless Transistor Depending on the Gate Length

Autori: Rostislav Rusev, George Angelov, Ivelina Ruskova, Elitsa Gieva, Dimitar Nikolov, Mariya Spasova, Marin Hristov, Rosen Radonov
Pubblicato in: 2021 28th International Conference on Mixed Design of Integrated Circuits and System, 2021, Pagina/e 184-187, ISBN 978-83-63578-20-6
Editore: IEEE
DOI: 10.23919/mixdes52406.2021.9497541

Compact Model of Junctionless Nanowire Transistor for Air-Pollution Sensor

Autori: George Angelov, Mariya Spasova, Vladimir Garistov, Dimitar Nikolov, Ivelina Ruskova, Rostislav Rusev, Elitsa Gieva, Rossen Radonov, Marin Hristov, Yordan Georgiev, Sayantan Ghosh, Muhammad Khan, Radostin Rusev
Pubblicato in: 2023 46th International Spring Seminar on Electronics Technology (ISSE), 2023, Pagina/e 1-5
Editore: IEEE
DOI: 10.1109/isse57496.2023.10168462

Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application

Autori: S. Ghosh, A. Echresh, M. B. Khan, D. Bhattacharya, U. Kentsch, S. Prucnal, V. Vardhan, S. Biswas, S. Hellebust, J. Wenger, J. D. Holmes, A. Erbe, Y. M. Georgiev
Pubblicato in: 2024 Device Research Conference (DRC), 2024, Pagina/e 1-2
Editore: IEEE
DOI: 10.1109/drc61706.2024.10605574

COMSOL Model of a Three-Gate Junctionless Transistor

Autori: R. Rusev, G. Angelov, I. Ruskova, E. Gieva, D. Nikolov, M. Spasova, M. Hristov, R. Radonov
Pubblicato in: 2021 IEEE 32nd International Conference on Microelectronics (MIEL), 2021, Pagina/e 93-96, ISBN 978-1-6654-4528-3
Editore: IEEE
DOI: 10.1109/miel52794.2021.9569053

Diritti di proprietà intellettuale

Double Schottky barrier-based Ozone and hydroxyl radical sensor on Si platform

Numero candidatura/pubblicazione: UCC 24039
Data: 2024-07-02
Candidato/i: UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK

Organic modified Schottky junctions as ozone and hydroxyl radical sensor on a Si platform

Numero candidatura/pubblicazione: UCC 24024
Data: 2024-05-13
Candidato/i: UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK

Organic modified Schottky junctions as ozone and hydroxyl radical sensor on a Si platform

Numero candidatura/pubblicazione: UCC 24024
Data: 2024-05-13
Candidato/i: UNIVERSITY OF YORK

Risultati finali

Pubblicazioni

Diritti di proprietà intellettuale

Condividi questa pagina Condividi questa pagina sui social network

Scarica Scarica il contenuto della pagina