Quantum Semiconductor Technologies Exploiting Antimony

Información del proyecto

QUANTIMONY

Identificador del acuerdo de subvención: 956548

DOI

10.3030/956548

Proyecto cerrado

Fecha de la firma de la CE 18 Agosto 2020

Fecha de inicio 1 Diciembre 2020

Fecha de finalización 30 Noviembre 2024

Financiado con arreglo a

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Coste total

€ 3 769 297,92

Aportación de la UE

€ 3 769 297,92

Coordinado por

AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Spain

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Websites, patent fillings, videos etc. (1)

QUANTIMONY internet website and social networks

QUANTIMONY internet website and social networks operational

Documents, reports (14)

Periodical dissemination and communication activities report 3/3

Periodical dissemination and communication activities report

Final QUANTIMONY Workshop

Report on the Final QUANTIMONY Workshop

QUANTIMONY Career and Industry Days 1/2

Report on the QUANTIMONY Career and Industry Day organized by AIXTRON SE

Periodical training activities report 1/3

A periodical report about the training activities will be delivered

Review of growth and fabrication of III-Sb quantum materials and devices

Consolidated review on the growth and fabrication of III-Sb quantum materials and devices

Review of structural and functional properties of III -Sb quantum materials and devices

Consolidated review on the structural and functional properties of III -Sb quantum materials and devices

Open QUANTIMONY School

Report on the Open QUANTIMONY School

Periodical dissemination and communication activities report 2/3

Periodical dissemination and communication activities report

Periodical training activities report 3/3

A periodical report about the training activities will be delivered

Periodical training activities report 2/3

A periodical report about the training activities will be delivered

Final AAB and SB Head review about QUANTIMONY training experience
Review of electronic band structure modelling of III-Sb quantum semiconductors

Consolidated review of electronic band structure modelling of III-Sb quantum semiconductors

Periodical dissemination and communication activities report 1/3

Periodical dissemination and communication activities report

QUANTIMONY Career and Industry Days 2/2

Report on the QUANTIMONY Career and Industry Days organized by IQE

Publicaciones

Conference proceedings (6)

Optimization of UV LED design using evolutionary algorithms

Autores: L. Leguay, H. Mączko, A. Schliwa, S. Birner
Publicado en: 2023 IEEE Photonics Conference (IPC), 2024, Página(s) 1-2
Editor: IEEE
DOI: 10.1109/ipc57732.2023.10360557

Empirical Tight-Binding Parameterizations for Accurate Heterostructure and Alloy Calculations

Autores: Anh-Luan Phan, Daniele Soccodato, Alessia Di Vito, Alessandro Pecchia, Matthias Auf der Maur
Publicado en: 2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2024, Página(s) 11-12
Editor: IEEE
DOI: 10.1109/nusod62083.2024.10723707

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Autores: Lucie Leguay, Abhiroop Chellu, Joonas Hilska, Esperanza Luna, Andrei Schliwa, Mircea Guina, Teemu Hakkarainen
Publicado en: Physics and Simulation of Optoelectronic Devices XXXII, 2024, Página(s) 24
Editor: SPIE
DOI: 10.1117/12.3002300

Multiscale Approaches for Electronic Device Simulation

Autores: Matthias Auf der Maur, Anh-Luan Phan, Daniele Soccodato, Alessia Di Vito, Alessandro Pecchia
Publicado en: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023, Página(s) 692-693
Editor: IEEE
DOI: 10.1109/nmdc57951.2023.10343710

Empirical tight-binding simulations for nonuniform disordered GaAsSb alloy

Autores: Anh-Luan Phan, Alessia Di Vito, Alessandro Pecchia, Matthias Auf der Maur
Publicado en: 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2023, Página(s) 73-74
Editor: IEEE
DOI: 10.1109/nusod59562.2023.10273494

Towards GaSb/GaAs quantum-ring single-photon LEDs: recent progress and prospects

Autores: Gizem Acar, Lucie Leguay, Samuel Jones, Peter Hodgson, Andrei Schliwa, Manus Hayne
Publicado en: Light-Emitting Devices, Materials, and Applications XXVIII, 2024, Página(s) 16
Editor: SPIE
DOI: 10.1117/12.3002881

Peer reviewed articles (21)

Inverse Design of a Hybrid Mie-Tamm Photonic Structure as a Highly Directional Gigahertz Single-Photon Source

Autores: Llorens, J. M. & Alén, B.
Publicado en: Phys. Rev. Applied, 2023, ISSN 2331-7019
Editor: American Physical Society
DOI: 10.1103/physrevapplied.19.034054

Spin-dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields

Autores: V. Laurindo, E. D. Guarin Castro, G. M. Jacobsen, E. R. C. de Oliveira, J. F. M. Domenegueti, B. Alén, Yu. I. Mazur, G. J. Salamo, G. E. Marques, E. Marega, M. D. Teodoro, V. Lopez-Richard
Publicado en: Physical Review B, Edición 105, 2023, ISSN 2469-9950
Editor: American Physical Society
DOI: 10.1103/physrevb.105.045414

Empirical tight-binding method for large-supercell simulations of disordered semiconductor alloys

Autores: Anh-Luan Phan, Alessandro Pecchia, Alessia Di Vito, Matthias Auf der Maur
Publicado en: Physica Scripta, Edición 99, 2024, Página(s) 075903, ISSN 0031-8949
Editor: Royal Swedish Academy of Sciences
DOI: 10.1088/1402-4896/ad4f65

Defect formation in InGaAs/AlSb/InAs memory devices

Autores: A. Trevisan, P. D. Hodgson, D. Lane, M. Hayne & P. Koenraad
Publicado en: Journal of Vacuum Science and Technology B, 2023, ISSN 2166-2746
Editor: AVS
DOI: 10.1116/6.0002677

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

Autores: Jaime Segura-Ruiz, Damien Salomon, Andrei Rogalev, Joël Eymery, Benito Alén, and Gema Martínez-Criado*
Publicado en: Nano Letters, Edición 20, 2021, ISSN 1530-6984
Editor: American Chemical Society
DOI: 10.1021/acs.nanolett.1c02760

Lingering times at resonance: The case of Sb-based tunneling devices

Autores: E.D. Guarin Castro, A. Pfenning, F. Hartmann, A. Naranjo, G. Knebl, M.D. Teodoro, G.E. Marques, S. Höfling, G. Bastard, V. Lopez-Richard
Publicado en: Physical Review Applied, Edición 23, 2025, Página(s) 014051, ISSN 2331-7019
Editor: American Physical Society
DOI: 10.1103/physrevapplied.23.014051

Functional Modifications Induced via X-ray Nanopatterning in TiO2 Rutile Single Crystals

Autores: Alessio, Andrea ; Bonino, Valentina; Heisig, Thomas ; Picollo, Federico ; Torsello, Daniele; Mino, Lorenzo; Martinez-Criado, Gema; Dittmann, Regina; Truccato, Marco
Publicado en: Physica status solidi. PSS-RRL, 2021, ISSN 1862-6254
Editor: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100409

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

Autores: V. Braza, T. Ben, S. Flores, D.F. Reyes, A. Gallego-Carro, L. Stanojević, Ž. Gačević, N. Ruíz-Marín, J.M. Ulloa, D. González
Publicado en: Applied Surface Science, Edición 604, 2024, Página(s) 154596, ISSN 0169-4332
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2022.154596

Interplay between Crystal Structure and Optical Response in Plateau–Rayleigh Zn₂GeO₄/SnO₂ Heterostructures

Autores: Jaime Dolado; Fernanda Malato; Jaime Segura-Ruiz; Ruth Martínez-Casado; María Taeño; Irina Snigireva; Pedro Hidalgo; Bianchi Méndez; Gema Martínez-Criado
Publicado en: Advanced Photonics Research, 2023, ISSN 2699-9293
Editor: Wiley
DOI: 10.1002/adpr.202300063

Optical Mapping of Nonequilibrium Charge Carriers

Autores: E. D. Guarin Castro*, A. Pfenning, F. Hartmann, G. Knebl, M. Daldin Teodoro, G. E. Marques, S. Höfling, G. Bastard, and V. Lopez-Richard
Publicado en: The Journal of Physical Chemistry, Edición 125(27), 2021, ISSN 1932-7447
Editor: American Chemical Society
DOI: 10.1021/acs.jpcc.1c02173

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

Autores: David Gonzalez et al.
Publicado en: Nanomaterials: Special Edición Multijunction and Intermediated-Band Solar Cells for a Higher-Efficiency Solar Conversion: Nanomaterials and Structural Approaches, Edición 13(5), 798, 2023, ISSN 2079-4991
Editor: MDPI
DOI: 10.3390/nano13050798

Comparison between InAs-based and GaSb-based interband cascade lasers with hybrid superlattice plasmon-enhanced claddings

Autores: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, S. Estevam, R. Weih, F. Hartmann, S. Höfling
Publicado en: Optical Materials Express, Edición 14, 2024, Página(s) 2912, ISSN 2159-3930
Editor: Optical Society of America
DOI: 10.1364/ome.536801

GaSb-based interband cascade laser with hybrid superlattice plasmon-enhanced claddings

Autores: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling
Publicado en: Applied Physics Letters, Edición 124, 2024, ISSN 0003-6951
Editor: American Institute of Physics
DOI: 10.1063/5.0217972

On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

Autores: Petr Steindl; Elisa Maddalena Sala; Benito Alén; Dieter Bimberg; Petr Klenovský
Publicado en: New Journal of Physics, 2021, ISSN 1367-2630
Editor: Institute of Physics Publishing
DOI: 10.1088/1367-2630/ac2bd6

Modelling of the efficiency of the photovoltaic modules: Grid-connected plants to the Cuban national electrical system

Autores: Y. Soler-Castillo et.al
Publicado en: Solar Energy, Edición vol 223, 2021, ISSN 0038-092X
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.solener.2021.05.052

5.0 <i>μ</i>m emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

Autores: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling
Publicado en: Journal of Vacuum Science &amp; Technology B, Edición 42, 2024, ISSN 2166-2754
Editor: AVS Science and Technology Society
DOI: 10.1116/6.0003584

Gallium nanoparticles as antireflection structures on III-V solar cells

Autores: S. Catalán-Gómez, E. Martínez Castellano, M. Schwarz, M. Montes Bajo, L. Dorado Vargas, A. Gonzalo, A. Redondo-Cubero, A. Gallego Carro, A. Hierro, J.M. Ulloa
Publicado en: Solar Energy Materials and Solar Cells, Edición 265, 2023, Página(s) 112632, ISSN 0927-0248
Editor: Elsevier BV
DOI: 10.1016/j.solmat.2023.112632

Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

Autores: Rothmayr, F.; Guarin Castro, E.D.; Hartmann, F.; Knebl, G.; Schade, A.; Höfling, S.; Koeth, J.; Pfenning, A.; Worschech, L.; Lopez-Richard, V.
Publicado en: Nanomaterials/ Special Edición Semiconductors and Nanophotonic Devices, Edición 12 (6) 1024, 2022, ISSN 2079-4991
Editor: MDPI
DOI: 10.3390/nano12061024

Machine learned environment-dependent corrections for a spds∗ empirical tight-binding basis

Autores: Daniele Soccodato, Gabriele Penazzi, Alessandro Pecchia, Anh-Luan Phan, Matthias Auf der Maur
Publicado en: Machine Learning: Science and Technology, Edición 5, 2024, Página(s) 025034, ISSN 2632-2153
Editor: IOP Publishing
DOI: 10.1088/2632-2153/ad4510

Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window

Autores: Lucie Leguay, Abhiroop Chellu, Joonas Hilska, Esperanza Luna, Andrei Schliwa, Mircea Guina, Teemu Hakkarainen
Publicado en: Materials for Quantum Technology, Edición 4, 2024, Página(s) 015401, ISSN 2633-4356
Editor: IOP Publishing Ltd
DOI: 10.1088/2633-4356/ad207e

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Autores: Alexander Mittelstädt, Andrei Schliwa & Petr Klenovský
Publicado en: Light: Science & Applications 11(1), 2022, ISSN 2047-7538
Editor: Springer Nature
DOI: 10.1038/s41377-021-00700-9