Quantum Semiconductor Technologies Exploiting Antimony

Informations projet

QUANTIMONY

N° de convention de subvention: 956548

DOI

10.3030/956548

Projet clôturé

Date de signature de la CE 18 Août 2020

Date de début 1 Decembre 2020

Date de fin 30 Novembre 2024

Financé au titre de

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Coût total

€ 3 769 297,92

Contribution de l’UE

€ 3 769 297,92

Coordonné par

AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Spain

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

Livrables

Websites, patent fillings, videos etc. (1)

QUANTIMONY internet website and social networks

QUANTIMONY internet website and social networks operational

Documents, reports (14)

Periodical dissemination and communication activities report 3/3

Periodical dissemination and communication activities report

Final QUANTIMONY Workshop

Report on the Final QUANTIMONY Workshop

QUANTIMONY Career and Industry Days 1/2

Report on the QUANTIMONY Career and Industry Day organized by AIXTRON SE

Periodical training activities report 1/3

A periodical report about the training activities will be delivered

Review of growth and fabrication of III-Sb quantum materials and devices

Consolidated review on the growth and fabrication of III-Sb quantum materials and devices

Review of structural and functional properties of III -Sb quantum materials and devices

Consolidated review on the structural and functional properties of III -Sb quantum materials and devices

Open QUANTIMONY School

Report on the Open QUANTIMONY School

Periodical dissemination and communication activities report 2/3

Periodical dissemination and communication activities report

Periodical training activities report 3/3

A periodical report about the training activities will be delivered

Periodical training activities report 2/3

A periodical report about the training activities will be delivered

Final AAB and SB Head review about QUANTIMONY training experience
Review of electronic band structure modelling of III-Sb quantum semiconductors

Consolidated review of electronic band structure modelling of III-Sb quantum semiconductors

Periodical dissemination and communication activities report 1/3

Periodical dissemination and communication activities report

QUANTIMONY Career and Industry Days 2/2

Report on the QUANTIMONY Career and Industry Days organized by IQE

Publications

Conference proceedings (6)

Optimization of UV LED design using evolutionary algorithms

Auteurs: L. Leguay, H. Mączko, A. Schliwa, S. Birner
Publié dans: 2023 IEEE Photonics Conference (IPC), 2024, Page(s) 1-2
Éditeur: IEEE
DOI: 10.1109/ipc57732.2023.10360557

Empirical Tight-Binding Parameterizations for Accurate Heterostructure and Alloy Calculations

Auteurs: Anh-Luan Phan, Daniele Soccodato, Alessia Di Vito, Alessandro Pecchia, Matthias Auf der Maur
Publié dans: 2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2024, Page(s) 11-12
Éditeur: IEEE
DOI: 10.1109/nusod62083.2024.10723707

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Auteurs: Lucie Leguay, Abhiroop Chellu, Joonas Hilska, Esperanza Luna, Andrei Schliwa, Mircea Guina, Teemu Hakkarainen
Publié dans: Physics and Simulation of Optoelectronic Devices XXXII, 2024, Page(s) 24
Éditeur: SPIE
DOI: 10.1117/12.3002300

Multiscale Approaches for Electronic Device Simulation

Auteurs: Matthias Auf der Maur, Anh-Luan Phan, Daniele Soccodato, Alessia Di Vito, Alessandro Pecchia
Publié dans: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023, Page(s) 692-693
Éditeur: IEEE
DOI: 10.1109/nmdc57951.2023.10343710

Empirical tight-binding simulations for nonuniform disordered GaAsSb alloy

Auteurs: Anh-Luan Phan, Alessia Di Vito, Alessandro Pecchia, Matthias Auf der Maur
Publié dans: 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2023, Page(s) 73-74
Éditeur: IEEE
DOI: 10.1109/nusod59562.2023.10273494

Towards GaSb/GaAs quantum-ring single-photon LEDs: recent progress and prospects

Auteurs: Gizem Acar, Lucie Leguay, Samuel Jones, Peter Hodgson, Andrei Schliwa, Manus Hayne
Publié dans: Light-Emitting Devices, Materials, and Applications XXVIII, 2024, Page(s) 16
Éditeur: SPIE
DOI: 10.1117/12.3002881

Peer reviewed articles (21)

Inverse Design of a Hybrid Mie-Tamm Photonic Structure as a Highly Directional Gigahertz Single-Photon Source

Auteurs: Llorens, J. M. & Alén, B.
Publié dans: Phys. Rev. Applied, 2023, ISSN 2331-7019
Éditeur: American Physical Society
DOI: 10.1103/physrevapplied.19.034054

Spin-dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields

Auteurs: V. Laurindo, E. D. Guarin Castro, G. M. Jacobsen, E. R. C. de Oliveira, J. F. M. Domenegueti, B. Alén, Yu. I. Mazur, G. J. Salamo, G. E. Marques, E. Marega, M. D. Teodoro, V. Lopez-Richard
Publié dans: Physical Review B, Numéro 105, 2023, ISSN 2469-9950
Éditeur: American Physical Society
DOI: 10.1103/physrevb.105.045414

Empirical tight-binding method for large-supercell simulations of disordered semiconductor alloys

Auteurs: Anh-Luan Phan, Alessandro Pecchia, Alessia Di Vito, Matthias Auf der Maur
Publié dans: Physica Scripta, Numéro 99, 2024, Page(s) 075903, ISSN 0031-8949
Éditeur: Royal Swedish Academy of Sciences
DOI: 10.1088/1402-4896/ad4f65

Defect formation in InGaAs/AlSb/InAs memory devices

Auteurs: A. Trevisan, P. D. Hodgson, D. Lane, M. Hayne & P. Koenraad
Publié dans: Journal of Vacuum Science and Technology B, 2023, ISSN 2166-2746
Éditeur: AVS
DOI: 10.1116/6.0002677

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

Auteurs: Jaime Segura-Ruiz, Damien Salomon, Andrei Rogalev, Joël Eymery, Benito Alén, and Gema Martínez-Criado*
Publié dans: Nano Letters, Numéro 20, 2021, ISSN 1530-6984
Éditeur: American Chemical Society
DOI: 10.1021/acs.nanolett.1c02760

Lingering times at resonance: The case of Sb-based tunneling devices

Auteurs: E.D. Guarin Castro, A. Pfenning, F. Hartmann, A. Naranjo, G. Knebl, M.D. Teodoro, G.E. Marques, S. Höfling, G. Bastard, V. Lopez-Richard
Publié dans: Physical Review Applied, Numéro 23, 2025, Page(s) 014051, ISSN 2331-7019
Éditeur: American Physical Society
DOI: 10.1103/physrevapplied.23.014051

Functional Modifications Induced via X-ray Nanopatterning in TiO2 Rutile Single Crystals

Auteurs: Alessio, Andrea ; Bonino, Valentina; Heisig, Thomas ; Picollo, Federico ; Torsello, Daniele; Mino, Lorenzo; Martinez-Criado, Gema; Dittmann, Regina; Truccato, Marco
Publié dans: Physica status solidi. PSS-RRL, 2021, ISSN 1862-6254
Éditeur: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100409

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

Auteurs: V. Braza, T. Ben, S. Flores, D.F. Reyes, A. Gallego-Carro, L. Stanojević, Ž. Gačević, N. Ruíz-Marín, J.M. Ulloa, D. González
Publié dans: Applied Surface Science, Numéro 604, 2024, Page(s) 154596, ISSN 0169-4332
Éditeur: Elsevier BV
DOI: 10.1016/j.apsusc.2022.154596

Interplay between Crystal Structure and Optical Response in Plateau–Rayleigh Zn₂GeO₄/SnO₂ Heterostructures

Auteurs: Jaime Dolado; Fernanda Malato; Jaime Segura-Ruiz; Ruth Martínez-Casado; María Taeño; Irina Snigireva; Pedro Hidalgo; Bianchi Méndez; Gema Martínez-Criado
Publié dans: Advanced Photonics Research, 2023, ISSN 2699-9293
Éditeur: Wiley
DOI: 10.1002/adpr.202300063

Optical Mapping of Nonequilibrium Charge Carriers

Auteurs: E. D. Guarin Castro*, A. Pfenning, F. Hartmann, G. Knebl, M. Daldin Teodoro, G. E. Marques, S. Höfling, G. Bastard, and V. Lopez-Richard
Publié dans: The Journal of Physical Chemistry, Numéro 125(27), 2021, ISSN 1932-7447
Éditeur: American Chemical Society
DOI: 10.1021/acs.jpcc.1c02173

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

Auteurs: David Gonzalez et al.
Publié dans: Nanomaterials: Special Numéro Multijunction and Intermediated-Band Solar Cells for a Higher-Efficiency Solar Conversion: Nanomaterials and Structural Approaches, Numéro 13(5), 798, 2023, ISSN 2079-4991
Éditeur: MDPI
DOI: 10.3390/nano13050798

Comparison between InAs-based and GaSb-based interband cascade lasers with hybrid superlattice plasmon-enhanced claddings

Auteurs: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, S. Estevam, R. Weih, F. Hartmann, S. Höfling
Publié dans: Optical Materials Express, Numéro 14, 2024, Page(s) 2912, ISSN 2159-3930
Éditeur: Optical Society of America
DOI: 10.1364/ome.536801

GaSb-based interband cascade laser with hybrid superlattice plasmon-enhanced claddings

Auteurs: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling
Publié dans: Applied Physics Letters, Numéro 124, 2024, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0217972

On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

Auteurs: Petr Steindl; Elisa Maddalena Sala; Benito Alén; Dieter Bimberg; Petr Klenovský
Publié dans: New Journal of Physics, 2021, ISSN 1367-2630
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1367-2630/ac2bd6

Modelling of the efficiency of the photovoltaic modules: Grid-connected plants to the Cuban national electrical system

Auteurs: Y. Soler-Castillo et.al
Publié dans: Solar Energy, Numéro vol 223, 2021, ISSN 0038-092X
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.solener.2021.05.052

5.0 <i>μ</i>m emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

Auteurs: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling
Publié dans: Journal of Vacuum Science &amp; Technology B, Numéro 42, 2024, ISSN 2166-2754
Éditeur: AVS Science and Technology Society
DOI: 10.1116/6.0003584

Gallium nanoparticles as antireflection structures on III-V solar cells

Auteurs: S. Catalán-Gómez, E. Martínez Castellano, M. Schwarz, M. Montes Bajo, L. Dorado Vargas, A. Gonzalo, A. Redondo-Cubero, A. Gallego Carro, A. Hierro, J.M. Ulloa
Publié dans: Solar Energy Materials and Solar Cells, Numéro 265, 2023, Page(s) 112632, ISSN 0927-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.solmat.2023.112632

Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

Auteurs: Rothmayr, F.; Guarin Castro, E.D.; Hartmann, F.; Knebl, G.; Schade, A.; Höfling, S.; Koeth, J.; Pfenning, A.; Worschech, L.; Lopez-Richard, V.
Publié dans: Nanomaterials/ Special Numéro Semiconductors and Nanophotonic Devices, Numéro 12 (6) 1024, 2022, ISSN 2079-4991
Éditeur: MDPI
DOI: 10.3390/nano12061024

Machine learned environment-dependent corrections for a spds∗ empirical tight-binding basis

Auteurs: Daniele Soccodato, Gabriele Penazzi, Alessandro Pecchia, Anh-Luan Phan, Matthias Auf der Maur
Publié dans: Machine Learning: Science and Technology, Numéro 5, 2024, Page(s) 025034, ISSN 2632-2153
Éditeur: IOP Publishing
DOI: 10.1088/2632-2153/ad4510

Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window

Auteurs: Lucie Leguay, Abhiroop Chellu, Joonas Hilska, Esperanza Luna, Andrei Schliwa, Mircea Guina, Teemu Hakkarainen
Publié dans: Materials for Quantum Technology, Numéro 4, 2024, Page(s) 015401, ISSN 2633-4356
Éditeur: IOP Publishing Ltd
DOI: 10.1088/2633-4356/ad207e

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Auteurs: Alexander Mittelstädt, Andrei Schliwa & Petr Klenovský
Publié dans: Light: Science & Applications 11(1), 2022, ISSN 2047-7538
Éditeur: Springer Nature
DOI: 10.1038/s41377-021-00700-9