Quantum Semiconductor Technologies Exploiting Antimony

Informazioni relative al progetto

QUANTIMONY

ID dell’accordo di sovvenzione: 956548

DOI

10.3030/956548

Progetto chiuso

Data della firma CE 18 Agosto 2020

Data di avvio 1 Dicembre 2020

Data di completamento 30 Novembre 2024

Finanziato da

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Costo totale

€ 3 769 297,92

Contributo UE

€ 3 769 297,92

Coordinato da

AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Spain

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Websites, patent fillings, videos etc. (1)

QUANTIMONY internet website and social networks

QUANTIMONY internet website and social networks operational

Documents, reports (14)

Periodical dissemination and communication activities report 3/3

Periodical dissemination and communication activities report

Final QUANTIMONY Workshop

Report on the Final QUANTIMONY Workshop

QUANTIMONY Career and Industry Days 1/2

Report on the QUANTIMONY Career and Industry Day organized by AIXTRON SE

Periodical training activities report 1/3

A periodical report about the training activities will be delivered

Review of growth and fabrication of III-Sb quantum materials and devices

Consolidated review on the growth and fabrication of III-Sb quantum materials and devices

Review of structural and functional properties of III -Sb quantum materials and devices

Consolidated review on the structural and functional properties of III -Sb quantum materials and devices

Open QUANTIMONY School

Report on the Open QUANTIMONY School

Periodical dissemination and communication activities report 2/3

Periodical dissemination and communication activities report

Periodical training activities report 3/3

A periodical report about the training activities will be delivered

Periodical training activities report 2/3

A periodical report about the training activities will be delivered

Final AAB and SB Head review about QUANTIMONY training experience
Review of electronic band structure modelling of III-Sb quantum semiconductors

Consolidated review of electronic band structure modelling of III-Sb quantum semiconductors

Periodical dissemination and communication activities report 1/3

Periodical dissemination and communication activities report

QUANTIMONY Career and Industry Days 2/2

Report on the QUANTIMONY Career and Industry Days organized by IQE

Pubblicazioni

Conference proceedings (6)

Optimization of UV LED design using evolutionary algorithms

Autori: L. Leguay, H. Mączko, A. Schliwa, S. Birner
Pubblicato in: 2023 IEEE Photonics Conference (IPC), 2024, Pagina/e 1-2
Editore: IEEE
DOI: 10.1109/ipc57732.2023.10360557

Empirical Tight-Binding Parameterizations for Accurate Heterostructure and Alloy Calculations

Autori: Anh-Luan Phan, Daniele Soccodato, Alessia Di Vito, Alessandro Pecchia, Matthias Auf der Maur
Pubblicato in: 2024 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2024, Pagina/e 11-12
Editore: IEEE
DOI: 10.1109/nusod62083.2024.10723707

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Autori: Lucie Leguay, Abhiroop Chellu, Joonas Hilska, Esperanza Luna, Andrei Schliwa, Mircea Guina, Teemu Hakkarainen
Pubblicato in: Physics and Simulation of Optoelectronic Devices XXXII, 2024, Pagina/e 24
Editore: SPIE
DOI: 10.1117/12.3002300

Multiscale Approaches for Electronic Device Simulation

Autori: Matthias Auf der Maur, Anh-Luan Phan, Daniele Soccodato, Alessia Di Vito, Alessandro Pecchia
Pubblicato in: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023, Pagina/e 692-693
Editore: IEEE
DOI: 10.1109/nmdc57951.2023.10343710

Empirical tight-binding simulations for nonuniform disordered GaAsSb alloy

Autori: Anh-Luan Phan, Alessia Di Vito, Alessandro Pecchia, Matthias Auf der Maur
Pubblicato in: 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2023, Pagina/e 73-74
Editore: IEEE
DOI: 10.1109/nusod59562.2023.10273494

Towards GaSb/GaAs quantum-ring single-photon LEDs: recent progress and prospects

Autori: Gizem Acar, Lucie Leguay, Samuel Jones, Peter Hodgson, Andrei Schliwa, Manus Hayne
Pubblicato in: Light-Emitting Devices, Materials, and Applications XXVIII, 2024, Pagina/e 16
Editore: SPIE
DOI: 10.1117/12.3002881

Peer reviewed articles (21)

Inverse Design of a Hybrid Mie-Tamm Photonic Structure as a Highly Directional Gigahertz Single-Photon Source

Autori: Llorens, J. M. & Alén, B.
Pubblicato in: Phys. Rev. Applied, 2023, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.19.034054

Spin-dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields

Autori: V. Laurindo, E. D. Guarin Castro, G. M. Jacobsen, E. R. C. de Oliveira, J. F. M. Domenegueti, B. Alén, Yu. I. Mazur, G. J. Salamo, G. E. Marques, E. Marega, M. D. Teodoro, V. Lopez-Richard
Pubblicato in: Physical Review B, Numero 105, 2023, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.105.045414

Empirical tight-binding method for large-supercell simulations of disordered semiconductor alloys

Autori: Anh-Luan Phan, Alessandro Pecchia, Alessia Di Vito, Matthias Auf der Maur
Pubblicato in: Physica Scripta, Numero 99, 2024, Pagina/e 075903, ISSN 0031-8949
Editore: Royal Swedish Academy of Sciences
DOI: 10.1088/1402-4896/ad4f65

Defect formation in InGaAs/AlSb/InAs memory devices

Autori: A. Trevisan, P. D. Hodgson, D. Lane, M. Hayne & P. Koenraad
Pubblicato in: Journal of Vacuum Science and Technology B, 2023, ISSN 2166-2746
Editore: AVS
DOI: 10.1116/6.0002677

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

Autori: Jaime Segura-Ruiz, Damien Salomon, Andrei Rogalev, Joël Eymery, Benito Alén, and Gema Martínez-Criado*
Pubblicato in: Nano Letters, Numero 20, 2021, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.1c02760

Lingering times at resonance: The case of Sb-based tunneling devices

Autori: E.D. Guarin Castro, A. Pfenning, F. Hartmann, A. Naranjo, G. Knebl, M.D. Teodoro, G.E. Marques, S. Höfling, G. Bastard, V. Lopez-Richard
Pubblicato in: Physical Review Applied, Numero 23, 2025, Pagina/e 014051, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.23.014051

Functional Modifications Induced via X-ray Nanopatterning in TiO2 Rutile Single Crystals

Autori: Alessio, Andrea ; Bonino, Valentina; Heisig, Thomas ; Picollo, Federico ; Torsello, Daniele; Mino, Lorenzo; Martinez-Criado, Gema; Dittmann, Regina; Truccato, Marco
Pubblicato in: Physica status solidi. PSS-RRL, 2021, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202100409

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

Autori: V. Braza, T. Ben, S. Flores, D.F. Reyes, A. Gallego-Carro, L. Stanojević, Ž. Gačević, N. Ruíz-Marín, J.M. Ulloa, D. González
Pubblicato in: Applied Surface Science, Numero 604, 2024, Pagina/e 154596, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2022.154596

Interplay between Crystal Structure and Optical Response in Plateau–Rayleigh Zn₂GeO₄/SnO₂ Heterostructures

Autori: Jaime Dolado; Fernanda Malato; Jaime Segura-Ruiz; Ruth Martínez-Casado; María Taeño; Irina Snigireva; Pedro Hidalgo; Bianchi Méndez; Gema Martínez-Criado
Pubblicato in: Advanced Photonics Research, 2023, ISSN 2699-9293
Editore: Wiley
DOI: 10.1002/adpr.202300063

Optical Mapping of Nonequilibrium Charge Carriers

Autori: E. D. Guarin Castro*, A. Pfenning, F. Hartmann, G. Knebl, M. Daldin Teodoro, G. E. Marques, S. Höfling, G. Bastard, and V. Lopez-Richard
Pubblicato in: The Journal of Physical Chemistry, Numero 125(27), 2021, ISSN 1932-7447
Editore: American Chemical Society
DOI: 10.1021/acs.jpcc.1c02173

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

Autori: David Gonzalez et al.
Pubblicato in: Nanomaterials: Special Numero Multijunction and Intermediated-Band Solar Cells for a Higher-Efficiency Solar Conversion: Nanomaterials and Structural Approaches, Numero 13(5), 798, 2023, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano13050798

Comparison between InAs-based and GaSb-based interband cascade lasers with hybrid superlattice plasmon-enhanced claddings

Autori: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, S. Estevam, R. Weih, F. Hartmann, S. Höfling
Pubblicato in: Optical Materials Express, Numero 14, 2024, Pagina/e 2912, ISSN 2159-3930
Editore: Optical Society of America
DOI: 10.1364/ome.536801

GaSb-based interband cascade laser with hybrid superlattice plasmon-enhanced claddings

Autori: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling
Pubblicato in: Applied Physics Letters, Numero 124, 2024, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0217972

On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

Autori: Petr Steindl; Elisa Maddalena Sala; Benito Alén; Dieter Bimberg; Petr Klenovský
Pubblicato in: New Journal of Physics, 2021, ISSN 1367-2630
Editore: Institute of Physics Publishing
DOI: 10.1088/1367-2630/ac2bd6

Modelling of the efficiency of the photovoltaic modules: Grid-connected plants to the Cuban national electrical system

Autori: Y. Soler-Castillo et.al
Pubblicato in: Solar Energy, Numero vol 223, 2021, ISSN 0038-092X
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.solener.2021.05.052

5.0 <i>μ</i>m emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

Autori: B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling
Pubblicato in: Journal of Vacuum Science &amp; Technology B, Numero 42, 2024, ISSN 2166-2754
Editore: AVS Science and Technology Society
DOI: 10.1116/6.0003584

Gallium nanoparticles as antireflection structures on III-V solar cells

Autori: S. Catalán-Gómez, E. Martínez Castellano, M. Schwarz, M. Montes Bajo, L. Dorado Vargas, A. Gonzalo, A. Redondo-Cubero, A. Gallego Carro, A. Hierro, J.M. Ulloa
Pubblicato in: Solar Energy Materials and Solar Cells, Numero 265, 2023, Pagina/e 112632, ISSN 0927-0248
Editore: Elsevier BV
DOI: 10.1016/j.solmat.2023.112632

Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

Autori: Rothmayr, F.; Guarin Castro, E.D.; Hartmann, F.; Knebl, G.; Schade, A.; Höfling, S.; Koeth, J.; Pfenning, A.; Worschech, L.; Lopez-Richard, V.
Pubblicato in: Nanomaterials/ Special Numero Semiconductors and Nanophotonic Devices, Numero 12 (6) 1024, 2022, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano12061024

Machine learned environment-dependent corrections for a spds∗ empirical tight-binding basis

Autori: Daniele Soccodato, Gabriele Penazzi, Alessandro Pecchia, Anh-Luan Phan, Matthias Auf der Maur
Pubblicato in: Machine Learning: Science and Technology, Numero 5, 2024, Pagina/e 025034, ISSN 2632-2153
Editore: IOP Publishing
DOI: 10.1088/2632-2153/ad4510

Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window

Autori: Lucie Leguay, Abhiroop Chellu, Joonas Hilska, Esperanza Luna, Andrei Schliwa, Mircea Guina, Teemu Hakkarainen
Pubblicato in: Materials for Quantum Technology, Numero 4, 2024, Pagina/e 015401, ISSN 2633-4356
Editore: IOP Publishing Ltd
DOI: 10.1088/2633-4356/ad207e

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Autori: Alexander Mittelstädt, Andrei Schliwa & Petr Klenovský
Pubblicato in: Light: Science & Applications 11(1), 2022, ISSN 2047-7538
Editore: Springer Nature
DOI: 10.1038/s41377-021-00700-9