Project description
New techniques to boost development of magnetic memory devices
Magnetoresistive random-access memories (MRAM), a type of non-volatile random-access memories that store data in magnetic domains, are particularly promising for replacing existing memory technologies. The only viable choice for sub-nanosecond operation of a non-volatile magnetic memory device is a spin-orbit torque MRAM. However, a major roadblock to the implementation of such a memory is that it requires a static in-plane magnetic field to achieve bipolar magnetisation switching. The EU-funded SOFT project aims to address this based on the work conducted in a previous project that demonstrated that the switching polarity can be determined by the shape of the magnetic free layer. Instead of using ultraviolet lithography tools, the project will propose an innovative memory fabrication technique, adapted for complex shapes, based on ion irradiation.
Programme(s)
Funding Scheme
ERC-POC-LS - ERC Proof of Concept Lump Sum PilotHost institution
75794 Paris
France
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Beneficiaries (2)
75794 Paris
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91120 Palaiseau
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The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.