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Shape controlled spin-Orbit memories : Fabrication process and Technology transfer

Project description

New techniques to boost development of magnetic memory devices

Magnetoresistive random-access memories (MRAM), a type of non-volatile random-access memories that store data in magnetic domains, are particularly promising for replacing existing memory technologies. The only viable choice for sub-nanosecond operation of a non-volatile magnetic memory device is a spin-orbit torque MRAM. However, a major roadblock to the implementation of such a memory is that it requires a static in-plane magnetic field to achieve bipolar magnetisation switching. The EU-funded SOFT project aims to address this based on the work conducted in a previous project that demonstrated that the switching polarity can be determined by the shape of the magnetic free layer. Instead of using ultraviolet lithography tools, the project will propose an innovative memory fabrication technique, adapted for complex shapes, based on ion irradiation.

Host institution

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
Net EU contribution
€ 120 000,00
Address
Rue Michel Ange 3
75794 Paris
France

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Region
Ile-de-France Ile-de-France Paris
Activity type
Research Organisations
Non-EU contribution
No data

Beneficiaries (2)

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France
Net EU contribution
€ 120 000,00
Address
Rue Michel Ange 3
75794 Paris

See on map

Region
Ile-de-France Ile-de-France Paris
Activity type
Research Organisations
Non-EU contribution
No data
SPIN-ION TECHNOLOGIES
France
Net EU contribution
€ 30 000,00
Address
10 Boulevard Thomas Gobert
91120 Palaiseau

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Ile-de-France Ile-de-France Essonne
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Non-EU contribution
No data