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Shape controlled spin-Orbit memories : Fabrication process and Technology transfer

Objective

Non-volatility is the main physical feature that fast memories, such as SRAM, are still lacking. Non-volatile memories could increase computing performance while reducing significantly the power consumption. The only viable option for sub-ns nonvolatile memory is the Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM). The main roadblock towards the integration of the SOT-MRAM is that the reproducible bipolar switching requires the application of a static in plane magnetic field. “Zero-field” SOT switching is still a challenge, which motivates active research on this topic. Within the “SMART Design” ERC-StG project, we are developing an innovative approach for this problem. We discovered that it is possible to determine the switching polarity by the shape of the magnetic free layer. This approach meets all the physical requirements for the SRAM replacement (scalability, switching time, switching current…), but the nano-fabrication of devices with complex shapes using standard u-v lithography tools is difficult and expensive. Here we propose to develop an innovative fabrication technique, adapted for complex shapes, based on ion irradiation. The technology provider is participating to the project, while the potential end-user of this technology is an external collaborator.

Call for proposal

ERC-2020-PoC
See other projects for this call

Funding Scheme

ERC-POC-LS - ERC Proof of Concept Lump Sum Pilot

Host institution

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
Address
Rue Michel Ange 3
75794 Paris
France
Activity type
Research Organisations
EU contribution
€ 120 000

Beneficiaries (2)

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France
EU contribution
€ 120 000
Address
Rue Michel Ange 3
75794 Paris
Activity type
Research Organisations
SPIN-ION TECHNOLOGIES
France
EU contribution
€ 30 000
Address
10 Boulevard Thomas Gobert
91120 Palaiseau
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)