Project description
New techniques to boost development of magnetic memory devices
Magnetoresistive random-access memories (MRAM), a type of non-volatile random-access memories that store data in magnetic domains, are particularly promising for replacing existing memory technologies. The only viable choice for sub-nanosecond operation of a non-volatile magnetic memory device is a spin-orbit torque MRAM. However, a major roadblock to the implementation of such a memory is that it requires a static in-plane magnetic field to achieve bipolar magnetisation switching. The EU-funded SOFT project aims to address this based on the work conducted in a previous project that demonstrated that the switching polarity can be determined by the shape of the magnetic free layer. Instead of using ultraviolet lithography tools, the project will propose an innovative memory fabrication technique, adapted for complex shapes, based on ion irradiation.
Objective
Non-volatility is the main physical feature that fast memories, such as SRAM, are still lacking. Non-volatile memories could increase computing performance while reducing significantly the power consumption. The only viable option for sub-ns nonvolatile memory is the Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM). The main roadblock towards the integration of the SOT-MRAM is that the reproducible bipolar switching requires the application of a static in plane magnetic field. “Zero-field” SOT switching is still a challenge, which motivates active research on this topic. Within the “SMART Design” ERC-StG project, we are developing an innovative approach for this problem. We discovered that it is possible to determine the switching polarity by the shape of the magnetic free layer. This approach meets all the physical requirements for the SRAM replacement (scalability, switching time, switching current…), but the nano-fabrication of devices with complex shapes using standard u-v lithography tools is difficult and expensive. Here we propose to develop an innovative fabrication technique, adapted for complex shapes, based on ion irradiation. The technology provider is participating to the project, while the potential end-user of this technology is an external collaborator.
Fields of science
Programme(s)
Funding Scheme
ERC-POC - Proof of Concept GrantHost institution
75794 Paris
France