Algan detectors for low cost solar UV-B band monitoring systems

Projektinformationen

ID Finanzhilfevereinbarung: ENV4970539

Projekt abgeschlossen

Startdatum 1 März 1998

Enddatum 29 Februar 2000

Finanziert unter

• Specific programme of research and technological development in the field of environment and climate, 1994-1998

Gesamtkosten

Keine Daten

EU-Beitrag

Keine Daten

Koordiniert durch

UNIVERSIDAD POLITECNICA DE MADRID
Spain

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Verwertbare Ergebnisse

Novel AIGaN photodetecor for erythema UV solar action monitoring

Using AIGaN semiconductor alloys, a novel ultraviolet photodiode which photoresponse matches very well the erythema biological action response has been fabricated. Such photodetector allows the monitorization of the solar UV radiation by detecting the UV-B and the UV-A photons, giving them a weight factor according to their wavelength, and following the approved response (CIE) for the erthema or sunburn effects of the solar UV on the human skin. Key innovative features are that such photodetectors are based on new GaN/AIGaN semiconductors layers, do not need any optical filter nor phoshor converter, that they are very stable with temperature and corrosive atmospheres, do not need a thermostatic chamber for outdoors use, and that they use present state of the art, available, GaN/AIGaN technology.