Algan detectors for low cost solar UV-B band monitoring systems

Informazioni relative al progetto

ID dell’accordo di sovvenzione: ENV4970539

Progetto chiuso

Data di avvio 1 Marzo 1998

Data di completamento 29 Febbraio 2000

Finanziato da

• Specific programme of research and technological development in the field of environment and climate, 1994-1998

Costo totale

Nessun dato

Contributo UE

Nessun dato

Coordinato da

UNIVERSIDAD POLITECNICA DE MADRID
Spain

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Risultati sfruttabili

Novel AIGaN photodetecor for erythema UV solar action monitoring

Using AIGaN semiconductor alloys, a novel ultraviolet photodiode which photoresponse matches very well the erythema biological action response has been fabricated. Such photodetector allows the monitorization of the solar UV radiation by detecting the UV-B and the UV-A photons, giving them a weight factor according to their wavelength, and following the approved response (CIE) for the erthema or sunburn effects of the solar UV on the human skin. Key innovative features are that such photodetectors are based on new GaN/AIGaN semiconductors layers, do not need any optical filter nor phoshor converter, that they are very stable with temperature and corrosive atmospheres, do not need a thermostatic chamber for outdoors use, and that they use present state of the art, available, GaN/AIGaN technology.