Obiettivo
Microwave wireless communications and microelectronics circuitry applications of high-TC superconductors are the most promising areas for a near-term large-scale commercialisation. For wireless communications and ULSI interconnections the development of the industrial-oriented reliable and cost-effective technologies of the HTS-components production requires the subsequent depositions of the complex multi-layered thin film devices. Multi-layered film structures appear to be needed due to a necessity to provide a perfect chemical, structural, mechanical, thermal and physical compatibility between the main ground templates and the superconducting film.
It will consist of
(i) single-crystalline sapphire for microwave passive components;
(ii) single-crystalline silicon for microelectronics circuitry, on one side, and quasi-single-crystalline perfect YBCO film with a very smooth surface and the highest superconducting properties, on the other side.
Working in collaboration, researchers of six European groups/laboratories will jointly study and develop multi-layered thin film compositions based on high-TC superconductors (HTS) for microwave devices in mobile, cellular and space communications as well as for the microelectronics circuitry based on the ULSI as interconnections. The six partners are: the National Centre for HREM (TU Delft, The Netherlands), University of Jena (Jena, Germany), Daresbury Synchrotron Laboratory (Daresbury, UK) Institute for Metal Physics of National Academy of Sciences of Ukraine (Kiev, Ukraine), Institute of Solid State and Semiconductor Physics Of Academy of Science of Byelorus (Minsk, Byelorus) and Institute for Applied Physics of Academy of Sciences of Moldova (Kishinev, Moldova).
Within the project it is planned to study the growth mechanisms of oxide and silicide buffer layers and high-TC YBa2Cu3O7 (HTS YBCO) films on various substrates. The formation of extended (linear and planar) microdefects during the multi-layered films deposition as well as crystal lattice defect densities and their spatial distribution and the preferential direction of the films will be correlated to particular nucleation and growth modes. Furthermore, investigations will be performed on the dependencies of the microwave surface resistance, RS, in the temperature and microwave power range below TC versus the density and spatial distributions of the extended defects (in particular, upon the linear defects - growth-induced dislocations). The final goal will be to be able to control all interface phenomena during the deposition, nucleation and growth and further device processing such that devices with the required properties are obtained. Furthermore, it is planned to study the effect of thin gold films deposited on the top of YBCO films (to prevent interaction with environment) on the microwave surface resistance and to determine the reasons of the unpredictable changes in RS as a function of temperature and gold layer thickness.
The interdiffusion mechanisms in YBCO/CoSi2/Si; YBCO/CeO2/CoSi2/Si thin film multilayers will be investigated
(i) to determine the thermal and chemical stability factors for these structures;
(ii) to evaluate the mechanical stress/strain arising within these multi-layered thin films and;
(iii) to determine physical and chemical parameters for the stress reduction.
The interrelation between the formation of defects in multi-layered buffered films and characteristics of crystal structure defects in the single-crystalline silicon substrate will be investigated to determine the reasons for
(i) the pinhole origination in CoSi2 film;
(ii) the surface and interfaces roughness during the deposition and processing. Also it is planned to find out the effective ways to control the defect microstructure in YBCO/CoSi2/Si; YBCO/CeO2/CoSi2/Si thin multilayered films for application as the interconnection components within a semiconductor device.
The participants will use various growth/deposition/processing techniques to develop highly perfect YBCO materials with extremely low microwave surface resistance at 77 K (lower by two order of magnitude than in pure copper) at RF frequency for applications in wireless systems such as filters, resonant structures and antennas. The growth/deposition/processing techniques include pulsed laser deposition, DC and RF magnetron sputtering as well as electron beam evaporation. Apart from research on interfacial phenomena focussed at thin film nucleation and growth, a proper choice of materials in the multilayers and their processing will be important to strongly reduce the so-called 'weakly coupled' regions in YBCO. The extended structure defects in the films are the main sources of the microwave power losses, the surface resistance increase, and the surface roughness and pinholes formation. Controlling a multitude of extended defects formation one can control also the critical current density, JC, which is the most important feature for interconnections.
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CORDIS classifica i progetti con EuroSciVoc, una tassonomia multilingue dei campi scientifici, attraverso un processo semi-automatico basato su tecniche NLP. Cfr.: Il Vocabolario Scientifico Europeo.
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Gli inviti a presentare proposte sono suddivisi per argomenti. Un argomento definisce un’area o un tema specifico per il quale i candidati possono presentare proposte. La descrizione di un argomento comprende il suo ambito specifico e l’impatto previsto del progetto finanziato.
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Meccanismo di finanziamento (o «Tipo di azione») all’interno di un programma con caratteristiche comuni. Specifica: l’ambito di ciò che viene finanziato; il tasso di rimborso; i criteri di valutazione specifici per qualificarsi per il finanziamento; l’uso di forme semplificate di costi come gli importi forfettari.
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Coordinatore
2628 AL Delft
Paesi Bassi
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