Obiettivo The aim of this project is to develop and demonstrate the feasibility of novel semiconductor devices for very high temperature operation. Such components are highly desirable for power, space and automotive applications.Improved characteristics of the fabricated devices will be based on the use of heterostructures operating at temperatures higher than 500 degrees C. Epitaxial growth of different polytypes of silicon carbide (SiC) on silicon carbide material as well as on SiC-aluminium nitride (AlN) solid solutions will be achieved at the Ioffe Institute. The fundamental properties of heterojunctions and different layers will be thoroughly investigated and modelled in the associated west European laboratories. Components such as diodes or junction field-effect transistors (JFETs) will be fabricated, the SiC-AlN layers being used as semi-insulating substrate. Programma(i) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Argomento(i) 15 - Condensed Matter Physics Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore Institut National Polytechnique de Grenoble Contributo UE Nessun dato Indirizzo Avenue des Martyrs 23 38016 Grenoble Francia Mostra sulla mappa Costo totale Nessun dato Partecipanti (4) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto CEA - Commissariat à l'Energie Atomique Francia Contributo UE Nessun dato Indirizzo 38054 Grenoble Mostra sulla mappa Costo totale Nessun dato Friedrich-Alexander-Universität Erlangen-Nürnberg Germania Contributo UE Nessun dato Indirizzo 91058 Erlangen Mostra sulla mappa Costo totale Nessun dato National Academy of Sciences of Ukraine Ucraina Contributo UE Nessun dato Indirizzo 252028 Kiev Mostra sulla mappa Costo totale Nessun dato Russian Academy of Sciences Russia Contributo UE Nessun dato Indirizzo 194021 St. Petersburg Mostra sulla mappa Costo totale Nessun dato
