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GaInNAs-based Semiconductor Heterostructures for 1.5 ?m Opto-electronics

Objective

Laser diodes (LDs) operating at wavelengths from 1.3 to 1.6 µm are the key components of optical-fibre communication-systems. Present LDs, which rely on InP-based semiconductor heterostructures, exhibit limited performances. Further, InP technology is more expensive/complex and less mature than GaAs. GaInNAs alloys form a new semiconductor family which presents the peculiarity that bandgaps in the near to mid infrared can theoretically be achieved with alloys moderately strained onto GaAs substrates. This opens a totally new field of applications to GaAs-based semiconductor heterostructures. Our objective is to develop GaInNAs-based edge-emitting laser diodes and VCSELs operating near 1.5 µm. In addition, we aim at elucidating the intricate properties of these alloys, and thus at precisely defining the field of applications which can be covered with these new GaAs-based materials. Laser diodes (LDs) operating at wavelengths from 1.3 to 1.6 µm are the key components of optical-fibre communication-systems. Present LDs, which rely on InP-based semiconductor heterostructures, exhibit limited performances. Further, InP technology is more expensive/complex and less mature than GaAs. GaInNAs alloys form a new semiconductor family which presents the peculiarity that bandgaps in the near to mid infrared can theoretically be achieved with alloys moderately strained onto GaAs substrates. This opens a totally new field of applications to GaAs-based semiconductor heterostructures. Our objective is to develop GaInNAs-based edge-emitting laser diodes and VCSELs operating near 1.5 µm. In addition, we aim at elucidating the intricate properties of these alloys, and thus at precisely defining the field of applications which can be covered with these new GaAs-based materials.

DESCRIPTION OF WORK
GaAs-based, GaInNAs (GINA) and its quantum-well heterostructures (QWs) will be grown by molecular-beam epitaxy combined with a unique set of in situ (electron and X-ray diffractions) and ex situ (X-ray diffraction, transmission electron and atomic force microscopies) characterization techniques.
A panel of spectroscopy techniques including a set-up to perform PL under pressure at cryogenic temperatures will be used to investigate GINA epitaxial layers as well as GINA/(Al)GaAs QWs. We will determine the variation of the band-gap of GINA as a function of In and N contents, and thus the domain of application of this new semiconductor material. Spectroscopy of QWs will give access to band-offsets and effective masses, which are crucial parameters for LD performances.
Various configurations of LDs emitting around 1.5 µm will be designed, fabricated, tested and modelled. Particular attention will be paid at comparing the characteristic temperature T0 of these LDs with InP-based LDs. These results will allow us to derive the best way, in terms of material and device design, to demonstrate GINA-based edge-emitting LDs and VCSELs operating near 1.5 µm.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Address
3, Rue Michel-ange
75794 Paris Cedex 16
France

Participants (2)

FORSCHUNGSVERBUND BERLIN E.V.
Germany
Address
Rudower Chaussee 17
12489 Berlin
UNIVERSIDAD POLITECNICA DE MADRID
Spain
Address
Avenida Ramiro De Maeztu 7
28040 Madrid